TIP502 Search Results

TIP501

Abstract: 2N3719 2N3720 TIP502 TIP60 TEXAS TIP602 TIP-501
Contextual Info: TYPES TIP501. TIP502 N-P-N SILICON POWER TRANSISTORS FOR PO W ER -A M PLIFIE R A N D HIG H -SPEED -SW ITC H IN G A P PLIC A TIO N S D E SIG NE D FOR C O M P LE M E N TA R Y USE W ITH 2 N 37 19, 2N 3720 Max t 0 ff of 0.4 /js at lc = 1 A 3-A Rated Continuous Collector Current

Contextual Info: TIP502 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N3719

Abstract: 2N3720
Contextual Info: T Y P ES 2N3719, 2N3720 P -N -P S ILIC O N PO W ER T R A N S IS T O R S TYPES 2N3719, 2N 3720 BULLETIN NO. DL-S 7111606, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP501, TIP502 Max t0ff of 0.4 ,us at lc = 1 A

TIP501

Contextual Info: T Y P ES TIP501, TIP502 N -P -N SILIC ON P O W ER T R A N S IS T O R S 0 H C< r r m FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N3719, 2N3720 w j j m z ^ • Max tQff of 0.4 at lc = 1 A • 3-A Rated Continuous Collector Current

2N4307

Contextual Info: C o n t ra n Devices. Inc LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:

BF357

Abstract: BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent
Contextual Info: Silect High Frequency Transistors TT MHz Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 Case Outlines BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

tlp 501

Abstract: MM4036 TIP NPN MM3736 MM4030 MM4031 MM4032 MM4033 MM5189 MM5262
Contextual Info: SEMICONDUCTOR SEMICONDUCTOR TECHNDLOUY, INU. TECHNOLOGY DSE M E D IU M A N D HIGH POW ER STI Type Polarity Power Dissipation . @25°C watts VCE(SAT.) @ lc hF E @ lc Ti re» VCEV (volts) vCEO (volts) (Min.) (Max.) fll3t,45fl □ □ □ 0 2 4 ‘i § 3131 S.E. Jay Street

ssp11n60s5

Abstract: SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5
Contextual Info: STI Type: SSP11N60S5 Notes: Breakdown Voltage: Continuous Current: RDS on Ohm: Trans Conductance Mhos: Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: Polarity:

transistor 6c x

Abstract: 2N4305 2N4307 TIP501 TIP502 C41-C41
Contextual Info: ÄTÄCKöX - Æ t tt r o n Devices. Inc LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR* d fl CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N4307

Contextual Info: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC _ 95 D 0 2 8 3 1 S0LITR0N DEVICES INC D 7~- t g W <7 DE|fl3kfibGE GODHaai □ | ~ A lim © * LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP NUMBER Devices, Inc. NPN EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION

TLP556

Abstract: N5004 2N3418 2N3419 2N3420 2N3421 2N3720 TIP502 TIP529 TIP530
Contextual Info: T ex a s Discrete Semiconductors In s t r u m e n t s M etal C an P o w e r/H igh R e lia b ility P ro fessio n al T yp e s co n tin u ed Device Type Polarity Outline Continuous Ic A VCEO h FE @ V Min. Max. <lc VCE A V W w 0.75 0.75 1 1 6 6 3.4 3.4 123

TO-59

Abstract: 2N5333 npn 2a 2N2150 2N2151 2N4300 2N4998 2N4999 2N5000 2N5001
Contextual Info: Metal Can Power 2 Case Outlines High Reliability Professional Types 0 -40 0 0 -34 5 nom See notes A and B Device Type Polarity Outline Continuous Ic VC EO A V 0 140 1 0 -3 2 U N F 2 A 0 1 0 5 0 -10 07 m ax \ Pitch dia max stud torque 0 -1 8 9 * 18in-lbs

TI494

Abstract: THP47 TF80 siemens TE3904 TI381 TIP-24 TF260 TI389 TI-494 TH415
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 (A) ESM952 ESM752A ESM952A BOY57A BOY57A BOY58R BOY58R PT9847 2SG3240 PT9785 C04262 SSP70 TIP35 1763-0420 1768-0420 SOT79821 SOT79821 B0249 2N1830 2N2130 SSP70A TIP35A B0249A 2N5885 SOT79822

B0935

Abstract: 2s0880 je181 to127 2SC1983 Sanken 2S0762 B0177 to-53 MJE31A GS2013 G
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 >= 2.5 A, 2N389 2N1470 BOT29A BOT29A BOT29AF B0177 2N1079 2N1080 2N3418S 2N2033 2N2034 2N2035 2N2036 2N2828 2N2829 2N1886 R4922 B0116 2N3418 BOT31AF BOT31AF MJE31A 2N4232 2N4232A 042C7

TIP152

Abstract: tip142
Contextual Info: SEMELAB LTD 37E » 0133107 QOOOObM b P, • \ * W ' Ü 3 M W - *"-' Type No. Reliability Option >c Package v CEO Polarity cont V c e /'C hFE@ *T Pd TIP112 TIP115 TIP116 TIP117 TIP120 NPN PNP PNP PNP NPN T0220 T0220 T0220 T0220 T0220 100 60 80 100 60 2 2 2