TJ 305 MOTOROLA Search Results

Contextual Info: MOTOROLA Order this document by MRF857/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF857 MRF857S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the

MURD310

Abstract: MURD305 MURD315 murd
Contextual Info: MOTOROLA SC D I O D E S / O P T O L4E » • fc,3L7E5S 0 0 f l b 5 3 4 bT=5 ■ M O T ? MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA SW ITCHMODE Pow er R ectifiers DPAK Surface Mount Package . . . designed fo r use in switching power supplies, inverters and as free wheeling diodes,

MURD310

Abstract: DM 0265 R MURD305 MURD315 MURD320
Contextual Info: MOTOROLA SC Í D I O D E S / O P T O } 1EE D I b3ti725S 0 0 7 ^ 0 0 1 T | „ 1-03-15* MOTOROLA • I SEMICONDUCTOR TECHNICAL DATA S w itc h m o d e P o w er R ectifiers D P A K Surface M oun t Package . designed for use in switching power supplies, inverters and as free wheeling diodes,

C106 thyristor

Abstract: C106D motorola thyristor c106d C106D C106 c106d pin out B52200F006 C106F motorola 305 C106A
Contextual Info: MOTOROLA Order this document by C106/D SEMICONDUCTOR TECHNICAL DATA C106 Series * Silicon Controlled Rectifier Reverse Blocking Triode Thyristors *Motorola preferred devices . . . Glassivated PNPN devices designed for high volume consumer applications such

c106d1 motorola

Abstract: C106 thyristor thyristor c106d C106 C106D motorola c106d thyristor C106D C106D1 thyristor C106d1 B52200F006
Contextual Info: MOTOROLA Order this document by C106/D SEMICONDUCTOR TECHNICAL DATA C106 Series Silicon Controlled Rectifier Reverse Blocking Triode Thyristors . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning

BD 149 transistor

Abstract: bd 317 BD315 bd318 transistor D317 BD317
Contextual Info: MOTOROLA SC XSTRS/R F 15E D | fc.3b?2S4 0004735 1 | 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON HIGH-POWER TRANSISTORS 16 AMPERES SILICON POWER TRANSISTORS . . . d e sig n ed for hig h qu ality am p lifie rs operating up to 100 W atts into 4.0 o h m s load w ith BD315, BD 316 an d into 8.0 o h m s lo ad w ith

motorola bridge rectifier mda

Abstract: motorola bridge rectifier motorola MDA b 104g
Contextual Info: D ~T' - 2 3-05 R3fi72SS MOTOROLA SC <DIOPES/OPTO 89D 77437 MOTOR OLA SC {D IO DE S/ OPTO} _ ' _ _ _ MOTOROLA ST DE |t,3t,?2S5 007743 7 S I h A k i^ A k i A #1 n L« 0 by MDA100G/D SEMICONDUCTOR TECHNICAL DATA MDA100G THRU MDA106G Integral Glass Passivated

MHT10P10

Abstract: C63H q 1363
Contextual Info: M OTO ROLA SC 12E D X S TR S/R F MOTOROLA I b3b?254 GGflMEIG G | Order this data sheet by MHT10P10/D S E M IC O N D U C T O R TECHNICAL DATA Product Preview P o w e r Field E ffe c t T r a n s is t o r P-Channel Enhancem ent-Mode Silicon Gate T M O S T M O S PO W ER FET

lSE 0420

Contextual Info: MO TOROLA SC X S T R S / R F 1 2 E D I b 3 b 7 2 S 4 0 0 0 4 5 ^ 5 4 I 7- Order this data sheet by MHT12N10/D MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Product Preview P o w e r Field E ffe c t T ra n sisto r l\l-Channel E n h a n c e m e n t-M o d e

Contextual Info: MOTOROLA SC -CDIODES/OPTOJ 15E D I b 3 L 7 B 5 ò O C m f i M O *i | 1N4370 thru 1N4372 See Page 4-4 MOTOROLA SEMICONDUCTOR •jpll-oi TÉCHNICAL DATA 1N4549A thru 1N4556A See Page 4-17 LOW-LEVEL TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES 1N4565 thru 1N4584

MM8001

Abstract: transistor CG 391 g
Contextual Info: MOTOROLA SEMICONDUCTOR MM8000 MM8001 TECHNICAL DATA The RF Line NPN S IL IC O N A M P L IF IE R T R A N S IS T O R S NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for high frequency C.A.T.V. amplifier applications. Su it­ able for use as output driver or pre-driver stages in V H F and U H F

TRANSISTOR Y1D

Abstract: 2N3924 2n3924 equivalent
Contextual Info: MOTOROLA SC XSTRS/R b3b7554 00^403(3 3 •H0Tb MbE D F ^ MOTOROLA ■i SEM ICONDUCTOR i TECHNICAL DATA 3 3 -0 5 2N3924 The R F Lin e NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . optim ized A n n u la r tra n sisto r fo r larg e-sig n al pow eram p lifier and d riv e r ap p licatio n s to 300 MHz.

1N5831

Abstract: MN5830 1n5829 MN5829 1N5631 1N5830
Contextual Info: MOTOROLA SC DIODES/OPTO b4E D • b3b7ESS 00flb27S 7bT « M O T ? MOTOROLA ■ I SEMICONDUCTOR TECHNICAL DATA 1N 5829 1N 5830 1N5831 M BR5831H, H1 Designer's Data Sheet S w itc h m o d e P o w e r R e c tifie rs . employing the Schottky Barrier principle in a large area metal-to-silicon power

MRF515

Abstract: motorola MRF515
Contextual Info: I MOTOROLA SC XSTRS/R F MbE P • b3b725M MOTOROLA DGTH7n T ■ SEMICONDUCTOR TECHNICAL DATA T ■ flO T b 5 3 - Q 5 MRF515 The R F L in e 0.75 W - 470 M H z NPN S IL IC O N H IG H F R EQ U E N C Y T R A N SIS T O R HIGH F R EQ U E N C Y T R A N SIST O R

transistor A495

Abstract: A495 case 316-01 MRF248 1117 t33 1117 33L 25CC MRF24 vk200 ferrite bead VK200 ferrite choke
Contextual Info: MOTOROLA I SC -CXSTRS/R F> ÖT » E | b 3b7S S 4 6 3 6 7 2 5 4 MOTOROLA SC X S T R S /R F D 0 7 flat.fl 1 ( D T ~ 3 3 -l£ 89D 7 8 8 6 8 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line MRF248 N P N Silic o n RF P o w e r T ran sisto r . . . designed fo r 12,5 v o lt VH F large-signal am p lifie r applications in industrial and co m ­

LT3046

Abstract: 305 motorola motorola rf Power Transistor t 228
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?2S4 00=14224 4 • fl OTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA T 3 3 ' 0 5 LT3046 The RF Line NPN S ilic o n High Fre q u e n cy T ra n sisto r lc = 150 m A HIGH FR EQ U EN C Y TR A N SISTO R NPN SILICON . . . designed for ultra-linear com munications or instrumentation applications.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV590 The RF Line UH F Lin e ar P o w e r T ra n sisto r 28 V — 4 7 0 -8 6 0 M H z U H F LIN E A R P O W ER T R A N S IS T O R . . . d e s ig n e d f o r p r e - d riv e r a n d d r iv e r s ta g e s in b a n d IV a n d V T V tra n s p o s e r s a n d t r a n s ­

B 835L

Contextual Info: MOTOROLA Order this document by MBRD835L/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power R ectifier M B R D 835L DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free

20P06

Abstract: YLE relay relay yle TP20P06 mtp20p MC14001 motorola 20p
Contextual Info: 6367254 MOTOROLA 96D X S T R S /R F SC Tb MOTOROLA D E p b 3h 7E S 4 r- 29~ ^ j 80096 ÜGßGCHb Order this data sheet by MTM20P06/D (□ SEMICONDUCTOR TECHNICAL DATA M T M 20P 06 M TP20P06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancem ent-M ode

transistor J585

Abstract: transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

DSP56301

Abstract: HA10
Contextual Info: AC Electrical Characteristics Host Interface Timing Host Interface Timing Universal Bus Mode Timing Parameters VCC = 3.3 V ± 0.3 V; TJ = −40˚C to +100 ˚C, CL = 50 pF + 2 TTL Loads Table 20 Universal Bus Mode Timing Parameters @ 66 MHz No. Characteristics

1N4I48

Abstract: TP3020A W-960 transistor BD135 BD135 TP3019 TP3019S Motorola Power Transistor
Contextual Info: MOT OR OL A SC XSTRS/R MbE F D • b3b7254 OO^SEOà 0 ■ PIOTb T 3 3 -0 3 MOTOROLA ■ SEM ICO N D U CTO R ■ TECHNICAL DATA TP 3019 TP3019S The RF Line U H F P o w er T ra n sisto rs The TP3019 and TP3019S are designed for 24 V common emitter base station ampli­

MRF548

Abstract: MRF531 MRF548 MOTOROLA MRF542 MRF531 motorola LG CRT MRF534 motorola AN938
Contextual Info: I MOTOROLA SC XSTRS/R F 4bE D • b3b72S4 MOTOROLA 00^4730 2 ■MOTb - T - 3 3 - ¿ ^5 SEMICONDUCTOR TECHNICAL DATA MRF531 The R F Line HIGH FREQUENCY TRANSISTOR NPN SILICO N NPN SILICON HIGH FREQUENCY TRANSISTOR . . . designed for high voltage and high current f j switching appli­

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060S MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier