TK39N60W Search Results
TK39N60W Price and Stock
Toshiba America Electronic Components TK39N60W5,S1VFMOSFET N-CH 600V 38.8A TO247 |
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TK39N60W5,S1VF | Tube | 1,482 | 1 |
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TK39N60W5,S1VF | Tube | 5 | 20 Weeks | 30 |
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TK39N60W5,S1VF | 1,247 |
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TK39N60W5,S1VF | 20 | 20 |
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TK39N60W5,S1VF | 20 | 20 Weeks | 30 |
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TK39N60W5,S1VF | Bulk | 5 | 30 |
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TK39N60W5,S1VF | Tube | 30 |
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TK39N60W5,S1VF | 1,245 |
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Toshiba America Electronic Components TK39N60W,S1VFMOSFET N CH 600V 38.8A TO247 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK39N60W,S1VF | Tube | 38 | 1 |
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TK39N60W,S1VF | Tube | 20 Weeks | 30 |
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TK39N60W,S1VF | 56 |
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Toshiba America Electronic Components TK39N60W,S1VF(STrans MOSFET N-CH Si 600V 38.8A 3-Pin(3+Tab) TO-247 |
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TK39N60W,S1VF(S | 28 | 14 |
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TK39N60W,S1VF(S | Bulk | 240 | 1 |
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TK39N60W,S1VF(S | 1,964 |
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TK39N60W,S1VF(S | 2,880 | 23 Weeks | 30 |
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TK39N60W,S1VF(S | 2,310 | 1 |
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Toshiba America Electronic Components TK39N60W5,S1VF(SMosfet, N-Ch, 600V, 38.8A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:38.8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Toshiba TK39N60W5,S1VF(S |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK39N60W5,S1VF(S | Bulk | 234 | 1 |
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TK39N60W5,S1VF(S | 1 |
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TK39N60W5,S1VF(S | 23 Weeks | 30 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TK39N60W | 10 | 1 |
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TK39N60W | 8 |
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TK39N60W | 1,870 |
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TK39N60W Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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TK39N60W5,S1VF |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 38.8A T0247 | Original | 250.16KB | ||||
TK39N60W,S1VF |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 600V 38.8A TO247 | Original | 10 |
TK39N60W Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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TK39N60WContextual Info: TK39N60W MOSFETs Silicon N-Channel MOS DTMOS TK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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TK39N60W O-247 TK39N60W | |
Contextual Info: TK39N60W5 MOSFETs Silicon N-Channel MOS DTMOS TK39N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS |
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TK39N60W5 O-247 | |
TK39N60WContextual Info: TK39N60W MOSFETs Silicon N-Channel MOS DTMOS TK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.9 mA) |
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TK39N60W O-247 TK39N60W | |
Contextual Info: TK39N60W5 MOSFETs Silicon N-Channel MOS DTMOS TK39N60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 150 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.062 Ω (typ.) by using Super Junction Structure : DTMOS |
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TK39N60W5 O-247 | |
Contextual Info: TK39N60W MOSFETs Silicon N-Channel MOS DTMOS TK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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TK39N60W O-247 | |
toshiba laptop charging CIRCUIT diagram
Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
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BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 | |
gt50jr22
Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
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SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W |