TL 2222 Search Results

ELECTRONIC BALLAST compact LAMP SCHEMATIC

Abstract: ELECTRONIC BALLAST 6 LAMP SCHEMATIC TLD58W 1N4148 sod27 ELECTRONIC BALLAST DIAGRAM schematic lamp ballast capacitor 33uf 450v philips CFL inverter circuit schematic diagram SFR25H resonant half bridge ballast schematic
Contextual Info: APPLICATION NOTE HF-TL Ballast with UBA2021 for TLD58W Lamp AN98099 Philips Semiconductors HF-TL Ballast with UBA2021 for TLD58W Lamp Application Note AN98099 Abstract A description is given of a 58 W electronic TL ballast demo board PR39091 , which is able to drive a standard

ELECTRONIC BALLAST DIAGRAM

Abstract: CU15d3 CFL inverter circuit schematic diagram ELECTRONIC BALLAST compact LAMP SCHEMATIC resonant half bridge ballast schematic TLD58W kp MKP 376 schematic lamp ballast igniter ELECTRONIC BALLAST 2 LAMP SCHEMATIC
Contextual Info: UM10390 HF-TL ballast with UBA2021 for TLD58W Lamp Rev. 01 — 11 October 2009 User manual Document information Info Content Keywords UBA2021, HF-TL ballast, TLD58W Lamp Abstract A low cost electronic TL ballast has been designed, which is able to drive a Philips TLD58W lamp or similar.

82S123 programming

Abstract: PJ 3139 prom 82S126 NCE8205 82s131 programming Signetics 2513 SIGNETICS prom ttl 512 CM340 82s129 programming Signetics 2608
Contextual Info: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO

SIGNETICS prom

Abstract: 82s129 programming 82S100 pin diagram of LED dot matrix display 9x9 Signetics TTL MIMI Ti PROM programming procedure Signetics 2513 82s131 programming 2048 bit 256x8 bipolar prom N82S130
Contextual Info: Ejgnotics ROM/PROM CONTENTS T TL PROM CONTENTS PAGE 2 T TL FPLA C O N T E N T S . PAGE 2 ECL PROM CONTENTS PAGE 3 SIGNETICS PROM R E L IA B IL IT Y PAGE 35 T TL ROM C O N T E N T S . PAGE 3 T T L ROM O R D ER IN G INFO

ELECTRONIC BALLAST 18W SCHEMATIC

Abstract: discrete 2x40w ballast an96004 philips electronic ballast 18W resonant half bridge ballast schematic an96004 half bridge self oscillating transformer ic 74682 ballast Self-Oscillating CU10d 2x40w
Contextual Info: APPLICATION NOTE DISCRETE 1X18W HF-TL BALLAST AN96104 Philips Semiconductors Application Note 96104 Abstract A description is given of a 1x18W HF-TL ballast and evaluation board PR37692 which is able to drive a T8 TLD lamp. The ballast, which is a Voltage Fed Half Bridge Inverter, has been designed for a nominal mains input

M111M

Abstract: 55115 256X8 515S5 Intel 2708 2308 rom intel 8308
Contextual Info: 2607-F,l,N FEATURES • • • • • • • • • • • • • PIN DESIGNATION Static operation—no clocks Access time: 450ns max Single 5V power supply T TL compatible inputs and outputs Power dissipation: 525mW Tri-state outputs Mask programmable chip select for easy

ovenaire

Abstract: BY285 TT 2222 ovenaire OSC ovenaire 10 mhz ovenaire oak frequency control OSC Oak Frequency Control
Contextual Info: OAK/MC COY ELEK-. O V EN AI RE SbE D • fc,72flS10 □ Q Q Q S 3 tl TT? H O K I 1 ^ 0 - 0 2 DIMENSIONS IN MILLIMETERS NUMBERS SHOWN FOR REF. ONLY NOT STAMPED ON BASE - 39.37 CENT. .76 DIA. 3 TERMINALS - 4-40 THREADED INSERT 4.75 DEEP, 2 PLACES PIN TT 2.

e5es

Abstract: IEGT nec 05d 51ti BA 9706 K cxt2 HP 1003 WA NEC CPUii POB1 IC CMOS7
Contextual Info: r M OS Integrated Circuit /¿PD17P402 * t i t ^ m 4 fcf'y N • •v - f ? □ = ] > h P - 7 /¿PD17P402 i, /¿PD17402£>P^VX?ROM £, 7 > • £ < A P R O M T 'B £ & tL* I«K i T T o fi P D17P402 « , 7 P 7 A 0 W # Jt £ / jP D 1 7 P 4 0 2 C 7 3 ^ ^ t4 (fc jg fc S ftftif) l i ,

irf 3905

Abstract: pj 0266 TC-6059 IRF 5350 TC-605 IRF 544 T108 transistor sms 2t lj11 irf 346
Contextual Info: NEC i ï r i \ ^ — 5 f ♦ h Compound Transistor f x FN 1F4Z $ f t O ' M 7 x £i £ | * J / E L T v ^ î ë 1 - c 2 . 8 ± 0 .2 R i= 2 2 1.5 kQ 0 . 65 io.i 5 O F A 1 F 4 Z t =? > 7 ° ' ) S > - 9 ') T fê ( T a Il = 2 5 °C ) g 3 u ? j W& Æ ^ t& # \tL

L46R

Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
Contextual Info: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l

Contextual Info: Photocoupler Product Data Sheet LTV-214-A-G Spec No.: DS70-2010-0067 Effective Date: 07/28/2011 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660

Contextual Info: Lite-On Technology Corporation OFFICE : 90, Chien I Road, Chung Ho Taipei, Taiwan, R.O.C. TEL : +886-2-2222-6181 ~ 8 FAX:+886-2-2221-0660, +886-2-2221-2780,+886-2-2225-1518 FAX HIGH POWER LED LTPL-P00DNS40 DATA SHEET LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only

Contextual Info: Lite-On Technology Corporation OFFICE : 90, Chien I Road, Chung Ho Taipei, Taiwan, R.O.C. TEL : +886-2-2222-6181 ~ 8 FAX:+886-2-2221-0660, +886-2-2221-2780,+886-2-2225-1518 FAX HIGH POWER LED LTPL-P00DMS30 DATA SHEET LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only

Contextual Info: Lite-On Technology Corporation OFFICE : 90, Chien I Road, Chung Ho Taipei, Taiwan, R.O.C. TEL : +886-2-2222-6181 ~ 8 FAX :+886-2-2221-0660, +886-2-2221-2780,+886-2-2225-1518 LED HIGH POWER LTPL-P013MS30 DATA SHEET Preliminary Version: 0.1 Created Date: 2010/07/21

Contextual Info: Lite-On Technology Corporation OFFICE : 90, Chien I Road, Chung Ho Taipei, Taiwan, R.O.C. TEL : +886-2-2222-6181 ~ 8 FAX :+886-2-2221-0660, +886-2-2221-2780,+886-2-2225-1518 LED HIGH POWER LTPL-P013NS40 DATA SHEET Preliminary Version: 0.1 Created Date: 2010/07/21

EHP00

Abstract: marking 2P
Contextual Info: SIEMENS NPN Silicon Switching Transistor SXT 2222 A • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 2222 A 2P Q68000-A8330 B SOT-89 C E Maximum Ratings

hps 2222a

Abstract: 2222A 2222k 2221A 2222a NPN 2222A transistors
Contextual Info: , 2221 2222 NPN Silicon Epitaxial Planar T ransistors with high cutoff frequency, for high speed switching e 2.5 max.Q50 ¿25 Plastic package = JEDEC TO-92 TO-18 compatible The case is impervious to light Weight approximately 0.18 g Dimensions in mm Absolute Maximum Ratings

Contextual Info: SIEMENS NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2907, SMBT 2907 A PNP Type Marking Ordering Code (tape and reel) PinC Contigui ation

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

pw 2222 a

Abstract: vn10 VN10L N0605 0610L Siliconix vn10
Contextual Info: Tem ic VN10/0605/0610/2222 Series_ S„|C0„|X N-Channel Enhancement-Mode MOS Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P art Number V B R D SS Min (V) r D S(on) Max (Q) v G S (th ) ID Min (A) (V) VN10LE 5 @ V gs = 10V

Q68000-A4334

Contextual Info: UT 32E D • fi23b3S0 QQlVSl'l 5 « S I P NPN Silicon Switching Transistors SIEMENS/ SP C L i SEMICONDS _ SMBT 2222 SMBT 2222 A r - 3 5 " -;f • • • High D C current gain 0.1 to 500 mA Low collector-emitter saturation voltage Complementary types: S M B T 2907, S M B T 2907 A PNP

SAS 251

Abstract: 4580d tda 2022 Tda 865 TDA 7650 CPA 7660 cmo 765 TAA 2761 A TCA4510 TAA761A
Contextual Info: 1:UNKAMATEUR-Bauelementeinformation IS Vergleichslisten für integrierte Schaltkreise DDR/international IS für den Einsatz in Rundfunkempfängern und Recordern DDR-Typ Vergleichstyp Beschreibung DDR-Typ Vergleichstyp Beschreibung A 202 D A 22SD A 244 D/SD

sharp 1a01

Abstract: PN 0506 b4 TL 1838 1a01 sharp 0619al 0421h DIN43 670 1A01 1A02 595 BC 0712 ACC MICRO 2089
Contextual Info: SM5K5 4-bit Single Chip Microcomputer Application Note Remote Control Receiver INTRODUCTION FEATURES The aim of the project is to generate a receiver controller to receive the signal of the format issued by the home-appliances association in Japan through the single chip computer SM5K5 made by SHARP.

N2222A

Abstract: st2222A RXT2222A st2222 N2222 MMST2222A PN2222A SST2222A T10B UMT2222A
Contextual Info: Transistors i NPN Medium Power Transistor Switching U M T2222A /SS T2222A/M M S T2222A/R XT2222A/P N 2222A •E x te r n a l dimensions (Units : mm) • Features 1 ) B V ceo < 4 0 V (lc = 1 0 m A ) UM T2222A 2 ) Complements the UMT2907A/SST2907A/MMST2907A