TL 2262 AM Search Results

darlington bd647

Abstract: TL 2262 lg bd645 tic 2260 BD649
Contextual Info: File Num ber 1241 BD643, BD645, BD647, BD649 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A O A pplications: t Features: m Power switching Hammer drivers • Operates from IC without predriver Series and shunt

BD649

Abstract: BD647 TL 2262 BD64S 00m0
Contextual Info: File Number 1241 BD643, BD645, BD647, BD649 HARRIS SEMTCOND SECTOR SbE ]> 4302271 OOMObflZ £21 8-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 45-60-80 Volts, 70 Watts Gain of 750 at 3A r o Applications: Features: t m Power switching • Operates from 1C without predrlver ■ Hammer drivers

TL 2262

Abstract: TLXR510 T-5044-E
Contextual Info: 1 — — — 1 17E P TELEFUNKEN ELECTRONIC m Ö^GÜRfc. DDDH152 2 TLXR510. Extreme Bright Red LED 0 5 mm T 1% in untinted nondiffused package Color Type Technology Red TLXR 510. GaAIAs on GaAs Angle of half intensity ±<P 12° Applications: General indicating and lighting purposes

integrated circuit TL 2262

Abstract: TL 2262 integrated circuit TL 2262 E20A LM6165 LM6265N LM6365N W10A SD112M lm6166
Contextual Info: LM6165/LM6265/LM6365 N a t i o n a l S e m i c o n d u c t o r LM6165/LM6265/LM6365 High Speed Operational Amplifier General Description Features The LM6165 family of high-speed amplifiers exhibits an ex­ cellent speed-power product in delivering 300 V /fis and

tl 2262 am

Abstract: L55c 6265N integrated circuit TL 2262 l8045
Contextual Info: LM6165/LM6265/LM6365 National Semiconductor LM6165/LM6265/LM6365 High Speed Operational Amplifier General Description Features The LM 6165 fam ily o f high-speed am plifiers exhibits an ex­ celle n t speed-pow er product in delivering 300 V /fxs and 725 MHz GBW stable for gains as low as + 25 w ith only

FM receiver CIRCUIT DIAGRAM and specification

Abstract: BT 2258 IC 2262 AF FM radio CIRcuit DIAGRAM TL 2262 TL 2272 fm receiver toko varicon toko HU-22124 2262 af tl 2262 am
Contextual Info: Philips S em iconductors Product specification AM/FM radio receiver circuit TEA5710; TEA5710T FEATURES QUICK REFERENCE DATA • Wide supply voltage range: 2.0 to 12V Conditions AM. f, = 1 MHz; m = 0.3; fm= 1 kHz; Vp = 3.0 V; measured in Fig.4 with S1 in position B and S2 in position A, unless otherwise specified

Contextual Info: ANALOG DEVICES □ Low Power, Low Noise Precision FET Op Amp AD795 FEATURES Low Power Replacement for Burr-Brown OPA-111, OPA-121 Op Amp and Tl TLC 2201 Low Noise 2.5 JiV p-p max, 0.1 Hz to 10 Hz 10 n V /V H z max at 10 kHz 0.6 fA /V H z at 1 kHz High DC Accuracy

LS123

Abstract: TL 2262 an366 LS221
Contextual Info: LS221 mlA 531 National Semiconductor DM74LS221 Dual Non-Retriggerable One-Shot with Clear and Complementary Outputs General Description The DM74LS221 is a dual monostable multivibrator with Schmitt-trigger input. Each device has three inputs permit­ ting the choice of either leading-edge or trailing-edge trig­

Contextual Info: APT54GA60B APT54GA60S 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved TO APT54GA60S -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low

Contextual Info: 2-INPUT VIDEO SUPERIMPOSER NJM2262 NJM 2262 is a 2input video superimposer, inculuding video switch circuit that consist of four Y signal circuit and one C signal circuit. Its impose voltage is set up white level and black level but You can fix its impose voltage.

IC 4027

Abstract: 35gp120b2d2 35GP120 APT35GP120B T0-247 70A 1200V IGBTS 35GP120B
Contextual Info: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

APT35GP120J

Abstract: 35GP120
Contextual Info: APT35GP120J 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

MIL-C-11015

Contextual Info: A - o MIL-C-11015& 39014 M olded Case Construction GENERAL SPECIFICATIONS S tand-off Version A vailable in Radial Leaded CKR Type Voltage Range: 5 0 ,1 0 0 , 200 VDC Hot Solder Dipped Leads in CKR Type C apacitance Range: 10 pF to 3.3 ¡x F Radial and Axial Leaded

AD796

Abstract: 7915 pin configuration AD795 AD795K AD79S AD795B AD795BH AD795AH Q81, 1K, 3500 ppm 2265 8pin
Contextual Info: ANALOG DEVICES INC 51E » A N A LO G D E V IC E S OaibfiOO 0Q3bl32 b4b • ANA Low Power, Low Noise Precision FET Op Amp AD795 □ FEATURES Low Power Replacement for Burr-Brown OPA-111, OPA-121 Op A m p and Tl TLC 2201 Low Noise 2.5 JiV p -p m ax, 0.1 Hz to 10 Hz

Contextual Info: FGA25S125P Shorted AnodeTM IGBT Features General Description • High soeed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability . This

FGA25S125P

Contextual Info: FGA25S125P Shorted AnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability . This

FGA25S125P

Contextual Info: FGA25S125P 1250 V, 25 A Shorted-anode IGBT Features General Description • High Speed Switching Using advanced field stop trench and shorted-anode technology, Fairchild ’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with

FOD8384

Contextual Info: FOD8384 2.5 A Output Current, High-Speed, MOSFET/IGBT Gate Drive Optocoupler in Optoplanar Wide-Body SOP 5-Pin Features Description • Reliable and High-Voltage Insulation with Greater The FOD8384 is a 2.5 A output current gate drive optocoupler capable of driving medium-power IGBT/

APT54GA60B

Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Contextual Info: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

APT35GP120B2D2

Abstract: 35GP120B2D2 35GP120B
Contextual Info: APT35GP120B2D2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency

tl 2262 am

Abstract: TL 2272 R DIODE Ch6h TL 2262 2272 t4 tl 2262 am data ADC0646 ADC0844 ADC0848 NSL5027
Contextual Info: ADC0844/ADC0848 NATL SEMICOND LINEAR 5ÖE D • bSDllSM G 0 7 3 cìScì 3D7 « N S C S S3 National i-si-io-ce mm Semiconductor ADC0844/ADC0848 8-Bit juP Compatible A/D Converters with Multiplexer Options General Description Features The ADC0844 and ADC0848 are CMOS 8-bit successive

Contextual Info: MOSEL-VITELIC bSE D MOSEL- VITELIC • ^ 3 5 3 3 ^ 1 Q Q 0 5 Q 74 lit. ■ M O V I V53C8512JV53C9512 HIGH PERFORMANCE, LOW POWER 512K x 8 AND 512K x9B IT FAST PAGE MODE CMOS DYNAMIC RAM PRELIMINARY 50/50L 60/60L 70/70L Max. RAS Access Time, Irac 50 ns 60 ns

PLD Programming Information

Contextual Info: TIBPAL22V10-7C HIGH-PERFORMANCE IMPACT-X PROGRAMMABLE ARRAY LOGIC CIRCUITS SRPS014D- D3520, AUGUST 1990 - REVISED NOVEMBER 1995 NT PA C K AG E T O P V IE W • Second-Generation PLD Architecture • High-Performance Operation: fmax (External Feedback). . . 80 MHz

A 3120 optocoupler

Abstract: HCPL3120
Contextual Info: HCPL-3120/J312, HCNW3120 2.5 Amp Output Current IGBT Gate Drive Optocoupler Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features The HCPL-3120 contains a GaAsP LED while the HCPL­­­J312 and the HCNW3120 contain an AlGaAs LED. The LED