TL104 Search Results

TL104 Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF	Page count
TL104K100R	Ohmite	Chassis Mount Resistors, Resistors, RES CHAS MNT 100 OHM 10% 158W	Original	PDF	2
TL104K10R0	Ohmite	Chassis Mount Resistors, Resistors, RES CHAS MNT 10 OHM 10% 158W	Original	PDF	2
TL104K10R0C	Ohmite	Chassis Mount Resistors, Resistors, RES CHAS MNT 10 OHM 10% 158W	Original	PDF	2
TL104K10R0CE	Ohmite	Chassis Mount Resistors, Resistors, RES CHAS MNT 10 OHM 10% 158W	Original	PDF	2
TL104K2K20	Ohmite	Chassis Mount Resistors, Resistors, RES CHAS MNT 2.2K OHM 10% 158W	Original	PDF	2
TL104K33R0	Ohmite	Chassis Mount Resistors, Resistors, RES CHAS MNT 33 OHM 10% 158W	Original	PDF	2
TL104K500R	Ohmite	Chassis Mount Resistors, Resistors, RES CHAS MNT 500 OHM 10% 158W	Original	PDF	2

TL104 Price and Stock

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Brady Worldwide Inc PTL-10-427 LABEL 0.75"HX0.25"W WHT 1=750PCS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTL-10-427	Bulk			1	1 $61.60 10 $61.60 100 $61.60 1000 $61.60 10000 $61.60	Buy Now
Newark	PTL-10-427	SPOOL			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ohmite Mfg Co TL104K100R RES CHAS MNT 100 OHM 10% 158W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TL104K100R	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Verical	TL104K100R		3		2	1 - 10 $59.64 100 $40.91 1000 $40.91 10000 $40.91	Buy Now
Newark	TL104K100R	Bulk			24	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	TL104K100R		4			1 $46.58 10 $45.88 100 $31.47 1000 $31.47 10000 $31.47	Buy Now
Brady Worldwide Inc PTL-10-473 LABEL, 0.25 IN H X 0.75 IN W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTL-10-473	Bulk			1	1 $105.10 10 $105.10 100 $105.10 1000 $105.10 10000 $105.10	Buy Now
Newark	PTL-10-473	SPOOL			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Brady Worldwide Inc PTL-10-423 LABEL 0.25"HX0.75"W WH 1=750PCS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTL-10-423	Bulk			1	1 $77.74 10 $77.74 100 $77.74 1000 $77.74 10000 $77.74	Buy Now
Newark	PTL-10-423	SPOOL			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ohmite Mfg Co TL104K500R RES CHAS MNT 500 OHM 10% 158W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TL104K500R	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	TL104K500R	Bulk			24	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	TL104K500R		1		1	1 $60.55 10 $59.64 100 $40.91 1000 $40.91 10000 $40.91	Buy Now
Master Electronics	TL104K500R		1			1 $46.58 10 $45.88 100 $31.47 1000 $31.47 10000 $31.47	Buy Now

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TL104 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TL71 Abstract: TL88 TL122 Contextual Info: Modular Heat Sinkable Thick Film Power A B 0.20" 5.10 mm SPECIFICATIONS Material Resistive Element: Thick Film on Alumina Housing: Aluminum Insulators: Glass reinforced high temperature Valox Terminals: Tinned brass Electrical Power Range: 27 – 275 watts	Original	VDC/2500 Mohm/500V TL122 1-866-9-OHMITE TL71 TL88 TL122	PDF
Contextual Info: TL Series Heat Sinkable Thick Film Power Resistors A B 0.20" 5.10 mm C* 0.25" 6.3 mm Profile 1.01" 25.7 mm 0.98" 25 mm *For adjacent taps, C = 0.665" 16.9mm Ohm Range A (mm) Operating Dielectric B Voltage Withstanding (mm) VAC Voltage VAC 0.3 - 1 Meg 1.0 - 2 Meg	Original	TL104 TL122 1-866-9-OHMITE	PDF
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Contextual Info: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147	PDF
transistor TL131 Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND	PDF
TL1 series Abstract: TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07 Contextual Info: TL1 Series Toroids C 1 F D 2 B A E 2E COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D .29 .325 .415 .475 .625	Original	TL1-18 TL1-19 TL1-16 TL1-17 TL1-12 TL1 series TL112 tl117 TL119 TL113 TL1-01 TL1-02 TL1-03 TL1-06 TL1-07	PDF
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 c102 TRANSISTOR NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242	PDF
TL235 Contextual Info: PTVA030121EA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz Description The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency	Original	PTVA030121EA PTVA030121EA H-36265-2 TL235	PDF
Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.	Original	PTFA091503EL PTFA091503EL 150-watt, H-33288-6	PDF
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Contextual Info: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1	PDF
C109 ceramic capacitor Abstract: TL235 Contextual Info: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235	PDF
PTFB212507SH Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB212507SH PTFB212507SH 200-watt	PDF
TRANSISTOR tl131 Abstract: tl239 Contextual Info: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239	PDF
C205 Contextual Info: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications	Original	PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205	PDF

TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Contextual Info: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148	PDF
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801	PDF
TL145 Abstract: TL245 transistor c111 C216 TL152 Contextual Info: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152	PDF
fet 4712 Abstract: NFM18PS105R0J30 ptfb193404f LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT Contextual Info: PTFB193404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990	Original	PTFB193404F PTFB193404F 340-watt H-37275-6/2 P03-A, fet 4712 NFM18PS105R0J30 LM780L05ACM-ND R804 4712 tl2032 mp 1046 TL1013 0805W220JT	PDF
TL225 Abstract: ATC100A6R2CW150X Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	PTFA220121M PTFA220121M 12-watt PG-SON-10 TL225 ATC100A6R2CW150X	PDF
TRANSISTOR tl131 Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117 Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117	PDF
TRANSISTOR tl131 Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA	PDF
hy 1418 Abstract: tl117 tl111 Contextual Info: TL1 Series Toroids 1 C F E 2E 2 D A B COIL INSTALLED N MOUNT STANDARD PACKAGE A Mount - 1 Mount - 2 Mount - 3 Mount - 4 Mount - 5 .340 .450 .450 .600 .700 B C NOMINAL .60 .65 .85 .95 1.25 NOMINAL ± .005 .578 .648 .828 .948 1.248 D E TYPICAL .110 .150 .150	Original	TL1-01 TL1-02 TL1-03 TL1-04 TL1-05 TL1-06 TL1-07 TL1-08 TL1-09 TL1-10 hy 1418 tl117 tl111	PDF
VMMK-1225 Abstract: lna 2.5 GHZ s parameter ads design TL103 application note TL39 AVX0402YG104ZAT2A RK73B1ETTP332J w250 600L RK73B1ETTP622J Mil C-13924B Contextual Info: VMMK-1225 Using the VMMK-1225 Wafer Scale Packaged Enhancement Mode PHEMT in a Low Noise Amplifier for the 10 to 13 GHz Frequency Range Application Note 5406 Introduction Circuit Topology The VMMK-1225 is a low noise 200 u gate width device using Avago Technologies industry leading Enhancement	Original	VMMK-1225 VMMK-1225 VMMK-1225. TL105 TL104 AV02-1511EN lna 2.5 GHZ s parameter ads design TL103 application note TL39 AVX0402YG104ZAT2A RK73B1ETTP332J w250 600L RK73B1ETTP622J Mil C-13924B	PDF
PTFB090901EA Contextual Info: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF

TL104 Search Results

TL104 Datasheets (7)

TL104 Price and Stock

Brady Worldwide Inc PTL-10-427

Ohmite Mfg Co TL104K100R

Brady Worldwide Inc PTL-10-473

Brady Worldwide Inc PTL-10-423

Ohmite Mfg Co TL104K500R

TL104 Datasheets Context Search

TL71

TL205

transistor TL131

TL1 series

c102 TRANSISTOR

tl249

TL235

LM7805ACH-ND

C109 ceramic capacitor

PTFB212507SH

TRANSISTOR tl131

C205

TL272

PTFB090901

TL145

fet 4712

TL225

TRANSISTOR tl131

TRANSISTOR tl131

hy 1418

VMMK-1225

PTFB090901EA