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Festo QSTL-1-4-10 PUSH-IN T-FITTING
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DigiKey	QSTL-1-4-10	Bulk	9		1	1 $9.14 10 $9.14 100 $9.14 1000 $9.14 10000 $9.14	Buy Now
Honeywell Sensing and Control 2TL141-3D SWITCH TOGGLE DPDT 15A 125V
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DigiKey	2TL141-3D	Bulk			50	1 - 10 - 100 $83.508 1000 $83.508 10000 $83.508	Buy Now
Mouser Electronics	2TL141-3D					1 - 10 - 100 $88.34 1000 $88.34 10000 $88.34	Get Quote
RS	2TL141-3D	Bulk		72 Weeks	6	1 - 10 $114.62 100 $114.62 1000 $114.62 10000 $114.62	Get Quote
Master Electronics	2TL141-3D					1 - 10 - 100 $85.25 1000 $85.25 10000 $85.25	Buy Now
Honeywell Sensing and Control 1TL141-3G SWITCH TOGGLE SPDT 15A 125V
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DigiKey	1TL141-3G	Bulk			50	1 - 10 - 100 $78.732 1000 $78.732 10000 $78.732	Buy Now
Mouser Electronics	1TL141-3G					1 - 10 - 100 $101.37 1000 $101.37 10000 $101.37	Get Quote
RS	1TL141-3G	Bulk		50 Weeks	7	1 - 10 $108.06 100 $108.06 1000 $108.06 10000 $108.06	Get Quote
Master Electronics	1TL141-3G					1 - 10 - 100 $80.37 1000 $80.37 10000 $80.37	Buy Now
Honeywell Sensing and Control 4TL141-3D SWITCH TOGGLE 4PDT 15A 125V
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DigiKey	4TL141-3D	Bulk			50	1 - 10 - 100 $192.756 1000 $192.756 10000 $192.756	Buy Now
Mouser Electronics	4TL141-3D					1 - 10 - 100 $339.62 1000 $339.62 10000 $339.62	Get Quote
RS	4TL141-3D	Bulk		56 Weeks	3	1 - 10 $264.57 100 $264.57 1000 $264.57 10000 $264.57	Get Quote
Master Electronics	4TL141-3D					1 - 10 - 100 $202.99 1000 $202.99 10000 $202.99	Buy Now
Finisar Corporation FTL-1419-3D TXRX OPT GBIC 1 GB/S 1310NM
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DigiKey	FTL-1419-3D	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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TL141 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	PDF	PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PDF	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1
C109 ceramic capacitor Abstract: TL235 Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PDF	PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235
TRANSISTOR tl131 Abstract: tl239 Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	PDF	PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PDF	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
TL145 Abstract: TL245 transistor c111 C216 TL152 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PDF	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	PDF	PTFC260202FC PTFC260202FC 10-watt H-37248-4
ATC100B6R2CT500X Abstract: TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126 Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PDF	PTFB213208FV PTFB213208SV 320-watt PTFB213208FV H-34275G-6/2 ATC100B6R2CT500X TL230 TL235 TL156 TL247 C20210 ATC100B100FW500X TL140 TL251 TL126
transistor c124 Abstract: TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PDF	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 transistor c124 TL184 TL272 tl271 TL181 TL279 tl298 TL168 TL308 TL300
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's	Original	PDF	PTFC260202FC PTFC260202FC 10-watt H-37248-4
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	PDF	PTFC260202FC PTFC260202FC 10-watt H-37248-4
TL139 Abstract: TL205 PTFB183404 ptfb183404f transistor TL131 Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications	Original	PDF	PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131
PTFB093608 Abstract: tl2272 ptfb09360 TL258 TL103 application note PTFB093608FV tl131 TRANSISTOR c104 TL249 TL145 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PDF	PTFB093608FV PTFB093608FV H-37275-6/2 PTFB093608 tl2272 ptfb09360 TL258 TL103 application note tl131 TRANSISTOR c104 TL249 TL145

Untitled Abstract: No abstract text available Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.	Original	PDF	PTFB183408SV PTFB183408SV 340-watt
TL235 Abstract: LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081 Text: PTFB091507FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz	Original	PDF	PTFB091507FH PTFB091507FH H-34288-4/2 16ubstances. TL235 LM78L05ACM-ND LM78L05ACMND PTFB091507 TL230 ATC100B330JW500XB TL1081
TL244 Abstract: CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PDF	PTVA035002EV PTVA035002EV H-36275-4 TL244 CW 7805 LM7805ACH-ND tl173 TL235 TL138 TL251 TL148 TL170 tl134
TL250 Abstract: TL239 Text: PTFB093608FV Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching,	Original	PDF	PTFB093608FV PTFB093608FV H-34275G-6/2 TL250 TL239
Untitled Abstract: No abstract text available Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PDF	PTFB183408SV PTFB183408SV 340-watt
4871I Abstract: No abstract text available Text: PTFB213208SV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PDF	PTFB213208SV PTFB213208SV 320-watt H-37275G-6/2 4871I
Untitled Abstract: No abstract text available Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz	Original	PDF	PTFB213004F PTFB213004F 300-watt H-37275-6/2
VdS 2093 2009 Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114 Text: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz	Original	PDF	PTFB213004F PTFB213004F 300-watt H-37275-6/2 VdS 2093 2009 TL2014 transistor c114 chip transistor c114 diagram TL243 TL145 tl1571 TL1621 transistor c114
220v AC voltage stabilizer schematic diagram Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122	Original	PDF	P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Untitled Abstract: No abstract text available Text: LC2M0S 16-Bit A/D Converter ANALOG ► DEVICES FEATURES Monolithic 16-Bit ADC 0.0015% Linearity Error On-Chip Self-Calibration Circuitry Programmable Low Pass Filter 0.1 Hz to 10 Hz Corner Frequency 0 to +2.5 V or ±2.5 V Analog Input Range 4 kSPS Output Data Rate	OCR Scan	PDF	16-Bit AD7701 20-Pin fO-6351 20-Lead

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TL141 Search Results

TL141 Price and Stock

Festo QSTL-1-4-10

Honeywell Sensing and Control 2TL141-3D

Honeywell Sensing and Control 1TL141-3G

Honeywell Sensing and Control 4TL141-3D

Finisar Corporation FTL-1419-3D

TL141 Datasheets Context Search

TL205

LM7805ACH-ND

C109 ceramic capacitor

TRANSISTOR tl131

TL272

TL145

TL139

Untitled

ATC100B6R2CT500X

transistor c124

Untitled

Untitled

TL139

PTFB093608

Untitled

TL235

TL244

TL250

Untitled

4871I

Untitled

VdS 2093 2009

220v AC voltage stabilizer schematic diagram

Untitled