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    Contextual Info: 1N957B.1N963B Vishay Telefunken Silicon Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Low reverse current level D VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter


    Original     		1N957B. 1N963B TLx75 200mA 13-Nov-98 D-74025 PDF

    1N957B

    Abstract: 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B
    Contextual Info: 1N957B.1N963B Vishay Semiconductors Silicon Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Low reverse current level D VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter


    Original     		1N957B. 1N963B TLx75 13-Nov-98 D-74025 1N957B 1N958B 1N959B 1N960B 1N961B 1N962B 1N963B PDF

    1N5221B

    Abstract: 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5267B
    Contextual Info: 1N5221B.1N5267B TELEFUNKEN Semiconductors Silicon Z–Diodes Features D Very sharp reverse characteristic D Very high stability D Low reverse current level D VZ–tolerance ± 5% Applications 94 9367 Voltage stabilization Absolute Maximum Ratings Tj = 25_C


    Original     		1N5221B. 1N5267B TLx75 D-74025 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5267B PDF