TM 222M Search Results

Contextual Info: CONDUCTIVE POLYMER ALUMINUM SOLID CAPACITORS TM NPCAP PSG - Radial Lead Upgrade! Series ・Super low ESR, high ripple current capability ・Endurance: 2,000 to 5,000 hours at 105℃ ・Rated voltage : 16 to 25Vdc ・RoHS Compliant ・Halogen Free PSG Downsized

intel 8155

Abstract: HS1-81C55RH-8 8155 programmable peripheral interface 81C55 81c55 programmable peripheral interface HS-81C56RH 5962R9676601QXC 5962R9676601QYC 5962R9676601VXC 5962R9676601VYC
Contextual Info: HS-81C55RH, HS-81C56RH TM Data Sheet August 2000 File Number Radiation Hardened 256 x 8 CMOS RAM Features The HS-81C55/56RH are radiation hardened RAM and I/O chips fabricated using the Intersil radiation hardened SelfAligned Junction Isolated SAJI silicon gate technology.

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R472

Contextual Info: Type TMR • Radial Leaded Capacitors IIAMICONl M allorY 105°C Extra Long Life GENERAL SPECIFICATIONS Very High Reliability OperatingTemperature: -40°C to +105°C DC Leakage Current: 6.3 - 100VDC I = < .03CV or 4/xA whichever is greater after 3 minutes Over 100VDC

APXW005

Contextual Info: Preliminary Data Sheet June 11, 2010 9-36V ProLynxTM 5A: Non-Isolated DC-DC Power Modules 9Vdc –36Vdc input; 3Vdc to 18Vdc output; 5A to 2.5A Output Current Features RoHS Compliant Applications • Compliant to RoHS EU Directive 2002/95/EC Z versions •

Contextual Info: Preliminary Data Sheet October 28, 2010 9-36V ProLynxTM 5A: Non-Isolated DC-DC Power Modules 9Vdc –36Vdc input; 3Vdc to 18Vdc output; 5A to 2.5A Output Current Features RoHS Compliant Applications • Compliant to RoHS EU Directive 2002/95/EC Z versions

Contextual Info: Preliminary Data Sheet July 22, 2010 9-36V ProLynxTM 5A: Non-Isolated DC-DC Power Modules 9Vdc –36Vdc input; 3Vdc to 18Vdc output; 5A to 2.5A Output Current Features RoHS Compliant Applications • Compliant to RoHS EU Directive 2002/95/EC Z versions •

DF7051

Abstract: 80-TQFP-1212 uPD703008Y DF780974 DF17809 nec V830 mcu RX83 SE17053 4g128 SDIP-40
Contextual Info: CD-ROM用マイクロコンピュータ（32ビット） CD-ROM X13769XJ2V0CD00 03−1 マイクロコンピュータ 32ビット・マイクロプロセッサ V800シリーズTM • V800シリーズ ロード・マップ マルチメディア命令搭載

ES1488

Abstract: MAX240CMH D AX244
Contextual Info: 19-4323; Rev 5; 6/95 A M X I A I +5 V-Po w e red, M ulti-Channel R S-232 Drivers/Receivers These parts are p a rticu la ry useful in battery-pow ered system s since their low -pow er shutdown m ode reduces p o w e r d is s ip a tio n to le s s th a n 5pW . The M A X 225,

Contextual Info: 19-4323; Rev 2; 7/92 +5V-Pow ered M ulti-C hannel R S-232 Drivers/Receivers The M A X 2 20-M A X 249 fa m ily o f line d riv e rs /re c e iv e rs is in te n d e d fo r all EIA -232E and V .28/V .24 c o m m u n i­ c a tio n s in te rfa c e s , a n d in p a rtic u la r, fo r th o se a p p li­

clcc land pattern

Abstract: CY37512VP208-66UMB CY37032VP44-100AI CY37064P44-154YMB CY37256P160-125UMB TO-220AB/clcc land pattern
Contextual Info: CYPRESS PRELIMINARY Ultra37000 CPLD Family 5V, 3.3V, ISR™ High-Performance CPLDs General Description Features • In-System Reprogram mable ISR™ CMOS CPLDs — JTAG interface for reconfigurability — Design changes don’t cause pinout changes — Design changes don’t cause timing changes

TC58NVG2D4BFT00

Abstract: TH58NVG3D4BFT00 SSTL-18 TMP86FS49FG H5401 TH58NVG*D TC58DVG14B1FT00 SSTL18 th58nvg TMP86FS49UG
Contextual Info: C O N T E N T S INFORMATION 東芝半導体情報誌アイ 2004年5月号 5 VOLUME 142 四日市工場で最先端の NAND型フラッシュメモリ製造棟の建設を開始 .4 今月の新製品情報 4ギガビットNAND型フラッシュメモリ .2

Thyristor C220A

Abstract: Thyristor C220 A C122D SCR thyristor GE type General electric SCR C220 General electric SCR C220E C122D SCR thyristor SCR C116 thyristor SCR 406 GE C220B LZ 173 relay
Contextual Info: GETYPE JEDEC C10 C11 C15 C 116 2N 1770A 7 7A 2N 1770-78 - - 25-400 25-600 25-600 C l 2 2 -3 * C220-2 C126 C36 C37 - - 2 N 1842-50 - 25-600 25 600 ELECTRICAL SPECIFICATIONS | VOLTAGE RANGE i 50-600 25-600 { 25-600 25-800 j 2b I FORWARD CONDUCTION It r m s

11l 60 xe

Abstract: CY37512P208-100UMB CY37512P208-83UMB e50j CY37256P160-125UMB vp44 CY37256P160-83UMB CY37064P44-154YMB CY37128P84-125JI U208
Contextual Info: CYPRESS PRELIMINARY Ultra37000 CPLD Family 5V, 3.3V, ISR™ High-Performance CPLDs General Description Features • In-System Reprogram mable ISR™ CMOS CPLDs — JTAG interface for reconfigurability — Design changes don’t cause pinout changes — Design changes don’t cause timing changes

PCB- 94v-0

Abstract: 2N 10261 transistor SCANBE 11633-2 SCANBE ejector S-202 SCANBE* s-202 2N 10261 transistor application circuit SCANBE ejector L4860 SDC 2921 SCANBE connector s-203
Contextual Info: S h iW ß iv n r Snap-In Card Guides Flame Retardant Guides Deep Channel Guides PCMCIA Card Guides Vertical Card Guides Interchangeable Guides Circular Card Guides Narrow Card Guides A nti-S tatic Card Guides Inserters & Extractors Card Ejectors & Handles

ax223

Abstract: MAX232A SO-16 MAX2200 AX233 MAX233m
Contextual Info: 19-4323; Rev 6; 3/96 +5 V-Po w ered, M ulti-C hannel R S-232 Drivers/Receivers T h ese p a rts are p a rtic u la rly use fu l in b a tte ry -p o w e re d system s, s in c e the ir lo w -p o w e r s hu tdow n m o de re d u ce s p o w e r d is s ip a tio n to le s s th a n 5 p W . T h e M A X 2 2 5 ,

sec 222M se

Abstract: ES1488 222M SE
Contextual Info: 19-4323; Rev 5; 6/95 +5V-Powered, Multi-Channel US-232 Drivers/Receivers T h e s e p a rts are p a rtic u la r y u s e fu l in b a tte ry -p o w e re d s y s te m s s in c e th e ir lo w -p o w e r s h u td o w n m o d e re d u c e s p o w e r d is s ip a t io n to le s s th a n 5 |jW . T h e M A X 2 2 5 ,

PCD3-5-1212

Abstract: T-20 T-23 T-25 CHI MAI sfe 10,7ma 72ydc
Contextual Info: PCD3- * - * EVALUATION DATA m a ? -* DWG No.C 136-53-01 APPD. CHK. DWG. H<hkL /V. 9/ / k } /'CTO 2 9 / j U / t o DENSEI-LAMBDA INDEX PAGE 1. Characteristics 1 —1 # # 1 4 Steady state data .T-1~16

merlin gerin multi 9 ihp 1c manual

Abstract: NS800N telemecanique contactor catalogue schneider NS1250N merlin gerin multi 9 ihp 1c Merlin Gerin NS1250N merlin gerin multi 9 ihp 1c program timer NS1250n 29450 SCHNEIDER schneider pm710
Contextual Info: Ready to install Distribution boards, DIN rail mounted equipment, enclosures and connection systems Contents Isobar 4 distribution boards and protective devices Section one 7 Modular control products Section two 31 Unit mounted residual current devices Section three

T-23

Abstract: T-24 T-25 T-30 1527V
Contextual Info: PC3- * - * EVALUATION DATA QA APPD. DWG No.C124-53-01 APPD CHK. X -, w /m , f n ' 3 / VecJ'V A HEMie-LÂMBBÂ DWG. i/je c /'n INDEX PAGE 1. # ‘l4r'—^ Characteristics 1—1 Steady state data .

K4S643232E

Contextual Info: K4S643232E CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.3 October 2001 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.3 Oct. 2001 K4S643232E CMOS SDRAM Revision History

Contextual Info: 19-4323; Rev 2; 7192 / H / JX IvV I +5V-Powered Multi-Channel RS-232 Drivers/Receivers G eneral Description The M A X 220-M A X 249 fa m ily o f line d riv e rs /re c e iv e rs is in te n d e d fo r all E IA -232E and V .28/V .24 c o m m u n i­ c a tio n s in te rfa c e s , a nd In p a rtic u la r, fo r th o se a p p li­

K4S643232F

Contextual Info: K4S643232F CMOS SDRAM 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Revision 1.0 January 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 Jan. 2002 K4S643232F CMOS SDRAM Revision History

IRF 5408

Abstract: irf 5306 ali 3328 HT 4906 MP 1008 es 3728 lx JRC 3414 mt 5392 JRC 2746 NJU6575C
Contextual Info: NJU6575 4 JM t f y • l l 'T '^ L C D i ■ * n* NJU6575IÌ. t o i i m ' 7 F W LCOK 5Ya* t? , 4, 422t* 'VK D * JFT -iRAM, C P U f ^ it t H B S , XWW ¿’< 4 4 * lil< $ 1 ? m titz tl*? ' 8 f '4 - A 7 W k if c liy 'j7 jl- - i> $ -7 i- ix |c r .c p u * 't > ^