TMD1013 Search Results

TOSHIBA MICROWAVE AMPLIFIER

Abstract: TMD1013-1-431 TOSHIBA TMD1013-1-431
Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ High Power P1dB=33dBm TYP. „ High Power Added Efficiency ηadd=14%(TYP.) „ High Gain G1dB=25dB(TYP.) „ Operable Frequency : f=10.0-12.0GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25°

ADD14

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1 MICROWAVE SEMICONDUCTOR TECHNICAL DATA PRELIMINARY FEATURES n Suitable for Microwave Radio n High Power P1dB=33.0dBm TYP. n High Gain G1dB=25dB(TYP.) n High Power Added Efficiency ηadd=14%(TYP.) n Broadband Operation f=10.0 – 13.3GHz.

TMD1013-1

Contextual Info: 3.0 TMD10120CS TMD10121CS TMD10122CS TMD10123CS TMD10124CS TMD10125CS TMD10126CS TMD10127CS TMD10128CS TMD10129CS TMD10130CS TMD10131CS TMD10132CS TMD10133CS TMD10134CS TMD10135CS TMD10136CS SMT INDUCTOR DOP1916A TMD20014

inductor 222

Abstract: TMD10138CS DOP31
Contextual Info: TMD10137CS DOP3115A-152 DOP3115A-222 TMD10138CS TMD10139CS TMD10140CS DOP3115A-332 DOP3115A-392 TMD10141CS DOP3115A-472 DOP3115A-602 TMD10142CS TMD10143CS DOP3115A-782 DOP3115A-103 1 TMD10144CS SMT INDUCTOR DOP3115A TMD20015

TMD1013-1-431

Contextual Info: MICROWAVE POWER MMIC AMPLIFIER TMD1013-1-431 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=33.0dBm at 9.5GHz to 12.0GHz n HIGH GAIN G1dB=25.0dB at 9.5GHz to 12.0GHz n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE ABSOLUTE MAXIMUM RATINGS Ta= 25°C

RFM70U12D

Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック

MT4S300T

Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors

MT3S111P

Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
Contextual Info: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287

TGI8596-50

Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
Contextual Info: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4

2sc5066

Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs

TMD1414-2

Abstract: TGM9398-25 8596-50
Contextual Info: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3

Contextual Info: TOSHIBA MICROWAVE POWER MMIC AMPLIFIER T M D 1013- 1 MICRO WA VE SEMICONDUCTOR PRELIMINARY TECHNICAL DATA FEATURES High Power PldB=33dBm TYP. High Power Added Efficiency 77 High Gain add=14%(TYP.) GldB=25dB(TYP.) Broadband Operation f=10.0-13.3GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25It )

TMD1013-1

Contextual Info: e U I D an Id A MICROWAVE POWER MMIC AMPLIFIER m T M D 1013-1 MICROWA VE SEMICONDUCTOR TECHNICAL DATA FEATURES High Power PldB=33dBm TYP. High Power Added Efficiency V add=14%(TYP.) High Gain GldB=25dB(TYP.) Broadband Operation f=10.0-13.3GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25<C)

RFM70U12D

Abstract: 2SC3136 RFM70 TGI8596-50 MT4S300T TA4029 TA4032FT TA4029TU TA4029CTC 2SK403
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック