TMS41 Search Results

TMS4161

Contextual Info: TMS4161 65,536 BIT MULTIPORT VIDEO RAM JU LY 1 9 8 3 —REVISED NOVEMBER 1 9 8 5 N PACKAGE Dual Accessibility — One Port Sequential Access, One Port Random Access TOP VIEW Four Cascaded 64-B it Serial Shift Registers for Sequential Access Applications

Contextual Info: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 891C - A U G U S T 1996 - R EVISED O C TO BE R 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.

Ks-7b

Contextual Info: TMS417800, TMS417800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 7 8 0 -D E C E M B E R 1992 x 8 DE P AC K A G E t DZ P A C K AG E t TOP VIEW (TOP VIEW) * Performance Ranges: vcc[ 1o D Q 0[ 2 ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE

Contextual Info: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70

TMS417409A

Contextual Info: TMS416409A, TMS417409A TMS426409A, TMS427409A 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS893B - AUGUST 1996 - REVISED APRIL 1997 I I I I I This data sheet is applicable to a ll TMS41x409As and TMS42x409As symbolized by Revision “B ”, Revision “E ”, and subsequent

S891C

Abstract: SS828
Contextual Info: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S891C -A U G U S T 1996-R E V IS E D OCTOBER 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E ” and subsequent revisions as described in the device symbolization section.

wf vqc 10 d a6

Contextual Info: I • I I I ! • • • • _ TMS417800A 2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS688B - AUGUST 1996 - REVISED SEPTEMBER 1997 This data sheet is applicable to a ll TMS417800As symbolized by Revision “E” and subsequent revisions as described in the

Contextual Info: TMS418160-60DZ 1/2 IL08D C-MOS 16 M (1,048,576 x 16)-BIT HIGH SPEED DRAM —TOP VIEW— 17 1 VDD GND 42 18 DQ0 2 41 DQ15 DQ1 3 40 DQ14 DQ2 4 39 DQ13 DQ3 5 38 DQ12 6 VDD DQ4 7 19 20 23 24 25 26 27 GND 37 28 36 DQ11 A0 DQ 0 A1 DQ 1 A2 DQ 2 A3 DQ 3 A4 DQ 4

Contextual Info: TMS417809A, TMS427809A, TMS427809AP 2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS894B – AUGUST 1996 – REVISED NOVEMBER 1997 D D D D D D D D D This data sheet is applicable to all TMS417809As and TMS427809A/Ps symbolized by Revision “E” and subsequent

TMS417409A

Abstract: TMS416409A TMS426409A TMS427409A 21D9
Contextual Info: TMS416409A, TMS417409A, TMS426409A, TMS427409A 4194304 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS893B – AUGUST 1996 – REVISED APRIL 1997 D D D D D D D D D DJ/DGA PACKAGES TOP VIEW This data sheet is applicable to all TMS41x409As and TMS42x409As symbolized

SMKS894

Abstract: PDSO-G28 Package TMS417809A TMS427809A TMS427809AP
Contextual Info: TMS417809A, TMS427809A, TMS427809AP 2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS894B – AUGUST 1996 – REVISED NOVEMBER 1997 D D D D D D D D D This data sheet is applicable to all TMS417809As and TMS427809A/Ps symbolized by Revision “E” and subsequent

TMS416169

Abstract: TMS418169
Contextual Info: TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS SMKS886C – MAY1995 – REVISED MARCH 1996 D D D D D D D D D D Organization . . . 1 048 576 Words by 16 Bits Single 5-V Power Supply Performance Ranges: ACCESS ACCESS ACCESS READ OR

Contextual Info: TMS417800A 2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS888B – AUGUST 1996 – REVISED SEPTEMBER 1997 D D D D D D D D D This data sheet is applicable to all TMS417800As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.

TMS416800

Abstract: TMS417800 20D17 20d19
Contextual Info: TMS416800, TMS417800 2097152-WORD BY 8-BIT HIGH-SPEED DRAMS SMKS883A – OCTOBER 1995 – REVISED MARCH 1996 D D D D D D D D Organization . . . 2 097 152 x 8 Single 5 V Power Supply ±10% Tolerance Performance Ranges: ’41x800-60 ’41x800-70 ’41x800-80

R-PDSO-G44 Package

Abstract: TMS416160 TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P
Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160C – MAY 1995 – REVISED NOVEMBER 1995 D D D D D D D D D D Organization . . . 1 048 576 x 16 Single Power Supply 5 V or 3.3 V

77261

Abstract: trc 20020
Contextual Info: TMS416400A, TMS417400A 4194304 BY 4-BTT DYNAMIC RANDOM-ACCESS MEMORIES _ SM KSa89B- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to all TMS41x400As symbolized by Revision “B”, Revision “E” and subsequent revisions as

SMKS891

Abstract: DQ8001
Contextual Info: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SMKS891C- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section,

Contextual Info: TMS417400 4194 304-WDRD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMKS740A-JULY 1991-REVISED DECEMBER 1992 This data sheet is applicable to all TMS417400s symbolized with Revision “A " and subsequent revisions as described on page 23. V CC : 1 DQ1 c 2 DQ2 c 3

21D8

Contextual Info: TMS416800, TMS416800P 2 097152 WORD BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORIES S M K S 6 8 0 -D E C E M B E R 1 9 9 2 Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR WRITE <‘ RAC MAX) («CAC) (MAX) (*AA) (MAX) 15 ns 30 ns CYCLE (MIN) '416800/P-60

TMS416100

Abstract: TMS416100P
Contextual Info: TMS416100, TMS416100P 16777216-BIT DYNAMIC RANDOM-ACCESS MEMORIES SMKS611 – FEBRUARY 1994 • • • • • • • • • • This data sheet is applicable to all TMS416100/Ps symbolized with Revision “B” and subsequent revisions as described on

417400

Abstract: TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400 TMS427400P
Contextual Info: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SMKS881B – MAY 1995 – REVISED AUGUST 1995 D D D D D D D D D D D Electrical characteristics for TMS416400/P and TMS417400/P is Production Data. Electrical

R-PDSO-G44 Package

Abstract: TMS418169A TMS428169A 418169 tms418169adz
Contextual Info: TMS418169A, TMS428169A 1048576 BY 16-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS892C – AUGUST 1996 – REVISED SEPTEMBER 1997 D D D D D D D D D D D This data sheet is applicable to TMS418169A and TMS428169A symbolized by Revision “E”, and subsequent revisions as described in the

Contextual Info: TMS416400A, TMS417400A 4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORIES _ SMKS889B- AUGUST 1996 - REVISED OCTOBER 1997 This data sheet is applicable to all TMS41x400As symbolized by Revision “B”, Revision “E" and subsequent revisions as described in the device symbolization section.

Contextual Info: TMS417809A, TMS427809A, TMS427809AP 2097152 BY 8-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES _ SMKSB94B - AUGUST 1996 - REVISED NOVEMBER 1997 This data sheet is applicable to a ll TMS417809As and TMS427809A/PS sym bolized by Revision “E " and subsequent