TMS416160 Search Results

Contextual Info: TMS416160, TMS416160P 1 048 576-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMKS660-DECEMBER 1992 Organization. . . 1 048 576 x 16 RE P A C K A G E t DC P A C K AG E t TOP VIEW (TOP VIEW) Single 5-V Supply (10% Tolerance) '416160/P-60 '416160/P-70

R-PDSO-G44 Package

Abstract: TMS416160 TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P
Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160C – MAY 1995 – REVISED NOVEMBER 1995 D D D D D D D D D D Organization . . . 1 048 576 x 16 Single Power Supply 5 V or 3.3 V

TMS416160

Abstract: TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P
Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160C – MAY 1995 – REVISED NOVEMBER 1995 D D D D D D D D D D Organization . . . 1 048 576 x 16 Single Power Supply 5 V or 3.3 V

TMS416160

Abstract: TMS416160P TMS418160 TMS418160P TMS426160 TMS426160P TMS428160 TMS428160P L6VE
Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS160A- MAY 1995 - REVISED JUNEJ995 '4xx160/P-60 '4xx160/P-70 ’4xx160/P-80 TIME tCAC MAX 15 ns 18 ns 20 ns ACCESS READ OR

Contextual Info: TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS1BOA- MAY 1995 - REVISED JUNE 1995 D G EPAC KA G E ‘4xx160/P-60 ’4 0 160/P-70 '4xx160/P-80 A C C ESS A C C ESS A C C ESS READ OR

20D17

Contextual Info: TMS416160A, TMS418160A TMS426160A, TMS426160AP, TMS428160A, TMS428160AP 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS SMKS891B - AUGUST 1996 - REVISED MARCH 1997 DGE PACKAGE TOP VIEW This data sheet is applicable to all TMS41x 160As and TMS42x160A/Ps symbolized by Revision ‘E ” and subsequent

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

RS3-210

Abstract: L22A
Contextual Info: TMS4161 60, T M S 4 1 6 1 60P, T M S 4 1 8160, T M S 4 1 8 1 6 0 P T M S 4261 60, TM S4 26 1 60P, TM S4 28 1 60, TM S4 28 1 60P 1 0 4 8 5 7 6 - W O R D B Y 16-BIT H I G H - S P E E D D R A M S S M K S 160C -M A Y 1995-R EVISED NOVEMBER 1995 Or ga n i za t i o n . . . 1 0 4 8 5 7 6 x 1 6