TN 733 10 Search Results

S T A 933

Abstract: TN931-20 20tn Thomson-CSF rm case A 933 S Thomson-CSF 891 mu 171 1100ARMS mu169 MU171
Contextual Info: thyristors ^ 80 Arm s thyristors ^ 80 Aeff THOMSON-CSF ^amb = 25°C Types •o Vr r m = V DRM ■TSM* 10 ms A (V) (A) 900 Arms / Tcase = 80°C TN TN TN TN TN TN 731 731 731 731 731 731 12 14 16 18 20 22 573 1200 1400 1600 1800 2000 2200 1100 Arms / Tcase = 80°C

tk 100 A

Abstract: TK18
Contextual Info: THOMSON ^▼ #7r m o i LU GENERAL PURPOSE & INDUSTRIAL s c s " HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M U 86 MU 169 MU 171 STANDARD THYRISTORS Type VDRM V RRM •t r m s A Tcase ■t s m @ Tj max* vTO (A) (V) <°C) n dv/dt di/dt repetitive 'GT

APT6060cn

Abstract: 0506015
Contextual Info: ADVANCED POüIER TECHNOLOGY o b lE D • DDDÜ7beJ I M T B A V P A d v a n ced P o w er Te c h n o l o g y D M APT6060CN APT5560CN APT6070CN APT5570CN Os POWER MOS IV 600V 10.5A 0.60Q 550V 10.5A 0.60Í2 600V 9.5A 0.70Q 550V 9.5A 0.70Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

APT6060CN

Abstract: 2SJ10 6060C BAVP APT5560CN APT5570CN APT6070CN
Contextual Info: ADVANCED POWER TECHNOLOGY blE D • □ 2 5 7 ‘iOT □ □ □0 7 t eJ IMT B A V P A d v a n ced W /A p o w e r rÆ ÊÊ T e c h n o l o g y POWER MOS IV APT6060CN APT5560CN APT6070CN APT5570CN 600V 550V 600V 550V 10.5A 10.5A 9.5A 9.5A 0.60Q 0.60Q

Contextual Info: Advance Information KM681000C Family 128Kx8 bit Low Power CMOS Static RAM CMOS SRAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS The • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% SAMSUNG'S advanced CMOS process technology.

Contextual Info: 7020^=} G o t m s i I S l •RHM BA10324A SILICON MONOLITHIC INTEGRATED CIRCUIT FEATURES 1 Internal frequency compensated for unity gain. 2) Wide power supply range: 3.0-32.0 V Single Supply) ±1.5~+16.0 V (Dual Supply) 3) Pin-compatible to the 324 type operational amplifier.

ND921

Abstract: br 903
Contextual Info: SERIES TND D IO D E ARRAYS The TND series consists of diode arrays packaged in 14-pin and 16-pin dual in-line plastic packages for easy autom atic insertion and better printed circuit board density. In addition to the diode characteristics for standard products

Contextual Info: m im MINI REEL PRODUCTS C O M P O N £l 5% Tolerance Chip Resistors tn Ordering Information □ □ J Type Code -61 41 65 45 = 1% Tol. = 1% Tol. = 5% Tol. = 5% Tol. - □ □ □ « u fc < 2 < H o is il on a miniReel in a miniBag on a miniReel

IN4500

Abstract: IN450 IN4500-1
Contextual Info: Micro/semi Corp. The cJiadc experts SANTA ANA, CA For more inform ation call: IN4500 and IN4500-1 ytív's 7 1 4 9 7 9 -K 22 0 FEATURES MILITARY SWITCHING DIODES • SILICON HIGH FORW ARD CON DU CTAN CE SWITCHING D IO DE • V O ID LES S * H E R M ETIC A LLY S E A L E D G LASS PACKAGE

EN3716

Abstract: 2039A 2SB1511
Contextual Info: Ordering num ber: EN3716 2SB1511/2SD2285 PNP/NPN Epitaxial Planar Silicon Transistors No.3716 30V/20A Switching Applications Qm< o Applications • Relay drivers, high-speed inverters, converters. Features • Low collector-to-emitter saturation voltage : VcE sat = ••0.5V(PNP), 0.4VCNPN) max.

Contextual Info: Power Transistors 2SC3796, 2SC3796A 2SC3796, 2SC3796A Silicon PNP Triple-Diffused Planar Type Package Dimensions High Breakdown Voltage, High Speed Switching • Features • High, speed switching • High collector-base voltage VCbo • Low collector-emitter saturation voltage (Vce rsa»)

Contextual Info: ThomasëBetts Two-Piece Connectors XD/P System THREE ROW, THREE CELL STRAIGHT MALE XD/P CONNECTORS PRESSFIT OR SOLDER POST 378-450 POSITIONS TWO CENTER MOUNTING FEATURES T O LR49571 P h y s ic a l P r o p e r t ie s In s u la tio n M a te ria l: G la s s fille d th e rm o p la s tic

C1083

Abstract: a2098 thomson image intensifier C1083-01 A7703 transistor a2098 V3346U-24 V3346U-04 c1097 C1097-04
Contextual Info: High Dynamic Range Streak Camera C7700 Less than 60 ps 10 000 :1 ▲ The relaxation oscillation of a laser diode can be measured with the C7700 under single shot operation. The data was captured with a C4880-21 readout CCD camera. The C7700 is a newly developed high dynamic range

Contextual Info: -m J.Y/T^S\^ /SO -9001 CERTIFIED U LTR A-A CC U R ATE/H IG H S L E W RATE VI S KENNEDY CORP. in v e rtin g O PER AT IO N AL A M PLIFIRER 8170 Thompson R^ad Road Cicero, N.Y. 13039 (315 699-9201 FEATURES: M /L-STD-1772 CERTIFIED Very Fast Settling Time - 10nS to 0.1 % Typical

C4880-10-12A

Abstract: C3640 C4187 hamamatsu b 2902 A1471 C4398-01 M4189 M4190 M4191 1t22
Contextual Info: 5 Framing Unit M4189 7 Multi-Pulse Generator C4398-01 Number of frames Exposure time Frame interval Shutter closing time Resolution at phosphor screen center Repetition rate Frame size on Phosphor Screen (V x H) The C4398-01 is able to operate the framing streak camera

2SB721

Abstract: 2SD786 2sd793 138D 2sd773 H 3A 332 j 2SD793 transistor
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: high v o lta g e m e ta llize d p o ly e s te r c a p a c ito rs ty p e 4ME12 w r a p and fill tu b u la r / ^ co n stru ctio n / T y p e 4 M E 1 2 «s a v e rs a tile m e ta lliz e d p o ly e s te r D E S IG N F E A T U R E S c a p a c ito r • C o m p a c t s iz e /

UM55

Abstract: X1912
Contextual Info: U M 5 5 1 2 -0 2 12 Sec Record/Playback 1C P R E L IM IN A R Y Features • ■ ■ ■ ■ ■ Built-in 192K bits SRAM 1 - 6 sections for record/playback Flexible section length Sections erase allowed Built-in DMA Direct Memory Access circuit AGC (Automatic Gain Control) to enlarge the input

bgjg

Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control

Contextual Info: Other MOS LSIs Panasonic MN6570F, MN6570TF, and MN6570EF Low Power 8-Bit, 3-Channel CMOS D/A Converters for Image Processing Pin Assignment • Overview The MN6570F, MN6570TF, and M N 6570EF are high­ speed 8-bit, 3-channel CM OS digital-to-analog convert­

h3 0925

Abstract: MAX PLUS II free alu 74S66 AM29116 AM29116A AM29L116A 32 bit barrel shifter using two level multiplexer A2ND A2NDY SC-1043
Contextual Info: / O Q i- / t Am29116A/Am29L116A/Am29116 High-Performance 16-Bit Bipolar Microprocessors DISTINCTIVE CHARACTERISTICS Optimized for High-Performance Controllers Excellent solution for applications requiring speed and bit-manipulation power. Fast The Am29116 supports 100-ns microcycle time/10-MHz

MIC5818BN

Abstract: STR 734
Contextual Info: MIC5818 32-Bit Serial-Input Latched Driver Preliminary Information General Description Features The MIC5818 is a 32-bit, serial-input, latched driver. Each high-voltage driver output features bipolar sourcing and DMOS sinking circuitry. • 3.3MHz guaranteed data input at VDD = 5V

Contextual Info: ELECTRICAL CHARACTERISTICS 15.1 Absolute maximum ratings_ M 37733M H B X X X F P ’s electrica l characte ristics are described below. For low voltage version, refer to section “18.4 Electrical c h a ra c te ris tic s .” For the latest data, inquire of addresses described last ^ “C O N TA C T A D D R E S S E S FOR FURTHER

TRANSISTOR k2185

Contextual Info: Model 540 Voltsensor CALEX MANUFACTURING CO SEE 2401 Stanwell Drive, Concord, CA 94520-4841 D 1011250 000105b 510 687-4411 (800)542-3355 37b « C E X FAX: (510) 687-3333 FEATURES • Rugged reliable solid state replacement for meter relays. • Uses almost any power source from +5 to +32V D C