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    bgjg

    Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
    Text: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control


    OCR Scan     		PDF -0ciBLF542 0D43TS4 OT171 PINNING-SOT171 MBA931 MRA971 bgjg transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909

    BUK543

    Abstract: BUK543-60A BUK543-60B TTA10
    Text: PHILIPS INTERNATIONAL bSE D • 711DflSb ODbMlflb 54T ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic Kill-pack


    OCR Scan     		PDF BUK543-60A/B -SOT186 BUK543 DS10NÃ BUK543-60A BUK543-60B TTA10

    m3303

    Abstract: 10a ultra fast diode M3306 BYR34 BYR34-500 M3299
    Text: SbE D • 711DflSb DDmSSfl IPHIN T'lfl DEVELOPMENT DATA T h is d a ta she e t c o n ta in s BYR34 SERIES advance in fo r m a t io n and s p e c ific a tio n s are s u b je c t to ch a n g e w it h o u t n o tic e . PHILIPS INTER N A T I O N A L ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES


    OCR Scan     		PDF 711DflSb BYR34 T-03-/7 711002b T-03-17 m3303 10a ultra fast diode M3306 BYR34-500 M3299

    74ABT2952

    Abstract: 74ABT2952D 74ABT2952DB 74ABT2952N 74ABT2952PW
    Text: INTEGRATED CIRCUITS 74ABT2952 Octal registered transceiver 3-State Product specification 1995 Feb 16 IC23 Data Handbook Philips Semiconductors PHILIPS • 711DflSb □□flbcIS7 b û 7 ■ This Material Copyrighted By Its Respective Manufacturer Philips Semiconductors


    OCR Scan     		PDF 74ABT2952 711DflSb 64mA/-32mA 500mA 74ABT TSSOP24: OT355-1 MSA401 74ABT2952 74ABT2952D 74ABT2952DB 74ABT2952N 74ABT2952PW

    SCN26562

    Abstract: SCN26562C4A52 SCN26562C4N48
    Text: INTEGRATED CIRCUITS SCN26562 Dual universal serial communications controller DUSCC Product specification 1995 May 1 IC19 Philips Semiconductors PHILIPS PHILIPS 711DflSb ôbT Philips Semiconductors Product specification Dual universal serial communications controller (DUSCC)


    OCR Scan     		PDF SCN26562 711Gfl2b SCN26562 sot238-3 mo-047ad 711005b SCN26562C4A52 SCN26562C4N48

    sot173x

    Abstract: BFP505
    Text: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES ¡"^7 ”^“ 3 SbE D • BFP505 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain • Low noise figure DESCRIPTION PIN • High transition frequency


    OCR Scan     		PDF OT173X) BFP505 711DflSb BFP505 OT173 OT173X MBC360 sot173x

    80C51

    Abstract: 83CE654 RFI noise reduction
    Text: 711DflSb DDbbflE? IbS • P H I N Philips Semiconductors Microcontroller Products Preliminary specification CMOS single-chip 8-bit m icrocontroli^ ^T h"” Electromagnetic Compatibility improvements DESCRIPTION PIN CONFIGURATION The 83CE654 Single-Chip 8-Bit


    OCR Scan     		PDF 711Qflab 80CE654/83CE654 83CE654 80C51 80C51. 83CE654 80CE654 8XCE654 RFI noise reduction

    plji

    Abstract: transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777
    Text: Philips Semiconductors_ Product specification HF/VHF power MOS transistor SbE J> m pLJILIPS INTERNATIONAL FEATURES • • • • • BLF241 711DflSb 00437bfc. 453 • PHIN PIN CONFIGURATION 7 “ 3 ^ " " 0 High power gain Easy power control


    OCR Scan     		PDF BLF241 711Gfl5ti 00M37bfc. MSB009' MBB072-S BLF24Â 0Q43774 plji transistor C4 016 LM 2222 2222 kn a 2222-581 AI 757 BLF241 UBB777

    BSV81

    Abstract: No abstract text available
    Text: 711DflSb OübT^bb 7fl0 IPHIN BSV81 N-CHANNEL IG-MOS-FET S ym m etrica l d e p le tio n ty p e fie ld -e ffe c t tra n sisto r in a T O -72 metal envelope w ith the substrate connec­ ted to th e case. It is intended fo r ch o p pe r and o th er special sw itch in g a p p lications, e.g. tim in g circuits,


    OCR Scan     		PDF 711DflSb BSV81 Db7ti70 BSV81

    100MHz high-frequency generator

    Abstract: NE5205N High-Frequency Wideband Power Transformers NE5205D operational amplifier discrete schematic SIgnetics RF Communications Products Signetics SE 540 zo 103 ma NE5205FE SA5205D
    Text: PHILIPS INTERNATIONAL SflE D • 711DflSb □OM'lb'lS 817 « P H I N Signetics RF Communications Product specification Wide-band high-frequency amplifier NE/SA5205 No external components are needed other than AC coupling capacitors because the NE/SA/SE5205 is internally compensated


    OCR Scan     		PDF NE/SA5205 NE/SA/SE5205 450MHz, 600MHz 100MHz high-frequency generator NE5205N High-Frequency Wideband Power Transformers NE5205D operational amplifier discrete schematic SIgnetics RF Communications Products Signetics SE 540 zo 103 ma NE5205FE SA5205D

    71009 SB

    Abstract: transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series
    Text: bSE T> Philips Semiconductors m 711DflSb 0DL.3Q77 71^ B IP H IN BLV98CE Data sheet status Product specification date of issue March 1993 UHF power transistor FEATURES QUICK REFERENCE DATA • Internal Input matching to achieve high power gain • Implanted ballasting resistors an


    OCR Scan     		PDF BLV98CE OT-171 711002b 00b3QÃ 71009 SB transistor tt 2222 BLV98CE transistor C9 NPN power Transistor 10A 24V transistor zx series

    PZ2327B15U

    Abstract: No abstract text available
    Text: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711DflSb DDMb4flfl QM3 ■ P H I N 7 ^ 3 3 -0 ? MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad­ band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.


    OCR Scan     		PDF PZ2327B15U 711DflSt 711dfleb t-33-09 7110fl5b PZ2327B15U

    T0-126 pin configuration

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D 711DflSb GDMSTOL, RS3 H P H I N r-3 ?-n emitter collector base lo ' cm PIN CONFIGURATION July 1991 193 MAX. UNIT - 22 32 45 60 80 V


    OCR Scan     		PDF O-126 BD434, BD436, BD438, BD440 BD442 BD433/435/437/439/441 711DflSb BD433 T0-126 pin configuration

    SOT173

    Abstract: SOT-173 wideband transistor sot173 BFP505 NPN planar RF transistor 5 GHZ TRANSISTOR
    Text: Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES BFP505 SbE D • 711DflSb QDMS3flS AS? ■ P H I N PINNING • High power gain PIN • Low noise figure 1 DESCRIPTION O’ collector • High transition frequency


    OCR Scan     		PDF BFP505 OT173X) BFP505 OT173 OT173X 004S3Ã OT173. OT173X. SOT173 SOT-173 wideband transistor sot173 NPN planar RF transistor 5 GHZ TRANSISTOR

    STT 3 SIEMENS

    Abstract: VS056 84C00 diagram universal remote op62 universal remote PCA84C922 PCA84C923 S028 SDIP24
    Text: INTEGRATED CIRCUITS \ m m m PCA84C922; PCA84C923 Microcontrollers for universal infrared remote transmitter applications Product specification File under Integrated Circuits, IC14 Philips S e m ico n d u cto rs 711DflSb 0CH0â25 mo This Material Copyrighted By Its Respective Manufacturer


    OCR Scan     		PDF PCA84C922; PCA84C923 711DflSb 0CHDfl25 7110flEfcj DCH0A57 STT 3 SIEMENS VS056 84C00 diagram universal remote op62 universal remote PCA84C922 PCA84C923 S028 SDIP24

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL SbE D • 711DflSb DDMbSTti DTO ■ P H I N Philips Components RZ3135B42W Data sheet status date ofIssue Preliminary specification June 1992 NPN silicon planar epitaxial microwave power transistor D E S C R IP T IO N A P P L IC A T IO N


    OCR Scan     		PDF 711DflSb RZ3135B42W 711005b

    CTC 880 transistor

    Abstract: ctc 880 transistor pins philips PE 1938 power supply marking B5T SCN2681AC1N40 SCN2681AC1N28 SCN2681 3 pin CTC 880 transistor SCN2681AC1F28 SCN2681AC1F40
    Text: PHILIPS INTERNATIONAL SbE » 711DflSb 0037cH b 713 • PHIN Product specification Philip« Semlconductors-Slgnetlcs Data Communications Products SCN2681 Dual asynchronous receiver/transmitter DUART T - 7 S '- 3 r - O S ^ DESCRIPTION FEATURES The Signetics SCN2681 Dual Universal


    OCR Scan     		PDF 711DflSb SCN2681 T-75--3r-osr SCN2681 I/02-16X I/02-16X I/02-1X I/02-1X CTC 880 transistor ctc 880 transistor pins philips PE 1938 power supply marking B5T SCN2681AC1N40 SCN2681AC1N28 3 pin CTC 880 transistor SCN2681AC1F28 SCN2681AC1F40

    BLF548

    Abstract: 015 capacitor philips ceramic trimmer capacitor T-39 SOT262A2 665mm tj915 D0440
    Text: Product «pacification Philips Semiconductor« UHF push-pull power MOS transistor BLF548 SbE D PHILIPS INTERNATIONAL I 711DflSb 0044051 ôdb BIPHIN T - 3 1 - / S PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability


    OCR Scan     		PDF OT262A2 BLF548 T-31-/S MBA379 BLF548 015 capacitor philips ceramic trimmer capacitor T-39 SOT262A2 665mm tj915 D0440

    Untitled

    Abstract: No abstract text available
    Text: / s 3 i~ /^7 NPN 1 GHz wideband transistor P H I L IP S I N T E R N A T I O N A L DESCRIPTION SbE D • BF747W 711DflSb G D 4 4 T 7 0 b33 M P H I N PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer, oscillator and IF amplifier in UHF


    OCR Scan     		PDF BF747W 711DflSb OT323 BF747W BF747.

    BYX25-600

    Abstract: BYX25 BYX25-600R diode BYX25 600 IR 0711 RECTIFIER DIODES PHILIPS BYX25 BYX25-1400 BYX25-1400R IEC134
    Text: BYX25 SERIES “ SbE D PHILIPS INTERNATIONAL • 711DflSb □ □ m S T b S4M ■ PHIN T-07-H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable o f absorbing transients and intended fo r power rectifie r applications. The series consists o f the follow ing types:


    OCR Scan     		PDF BYX25 711DflSb T-07-H BYX25-600 BYX25-1400. BYX25-600R BYX25-1400R. BYX25- diode BYX25 600 IR 0711 RECTIFIER DIODES PHILIPS BYX25 BYX25-1400 BYX25-1400R IEC134

    SOT-173

    Abstract: SOT173 SOT173 RF transistor NPN planar RF transistor BFP540 wideband transistor sot173
    Text: Philips Objective specification 3 !~~^3 NPN 9 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES 5bE D • BFP540 711DflSb D0453flfci HT2 ■ PHIN PINNING PIN • High power gain • Low noise figure


    OCR Scan     		PDF BFP540 QQ453Ã OT173X) BFP540 OT173 OT173X OT173. OT173X. SOT-173 SOT173 SOT173 RF transistor NPN planar RF transistor wideband transistor sot173

    BLF241

    Abstract: BLF241E 2322 653 71005 International Power Sources transistor-BLF241E
    Text: Philips Semiconductor» HF/VHF power MOS transistor PHILIPS INTERNATIONAL 5 faE ì> M 3*1"0 7 BLF241E 711DflSb 0DM377S 4bb H P H I N PIN CONFIGURATION FEATURES • • • • • J- High power gain Easy power control Gold metallization Good thermal stability


    OCR Scan     		PDF T-37-07 BLF241E 711005b 0DM377S O-39/3) 711QflBb D0M37fi3 BLF241 BLF241E 2322 653 71005 International Power Sources transistor-BLF241E

    2N2894A

    Abstract: TRANSISTOR LC80 ic 741 by philips 7ZS6554
    Text: PHILIPS INTERNATIONAL SbE D • 711DflSb O O M S b m 2N2894A Data sheet status Preliminary specification date of issue December 1990 2fl7 ■ P H I N "F3S-C7 Silicon switching transistor Q U IC K R E F E R E N C E DATA UNIT M AX. MIN. CONDITIONS PARAM ETER


    OCR Scan     		PDF 711DflSb 0042L 2N2894A PINNING-TO-18 2N2894A T-35-07 TRANSISTOR LC80 ic 741 by philips 7ZS6554

    74F257

    Abstract: F257 N74F257D 74F257A N74F257AD N74F257AN N74F257N 74f257adc F257A
    Text: 5flE » PHILIPS INTERNATIONAL P hilip* S e m ic o n d u c to n -S Ig n a H c s Document No. 853-0360 711DflSb ODSSOflfl 7ST « P H I N FAST 74F257, 74F257A Data Selectors/Multiplexers ECN No. 98483 Dale of issue January 8,1990 Status Product Specification


    OCR Scan     		PDF F258A 74F257/74F257A F257/ F257A 500ns 74F257 F257 N74F257D 74F257A N74F257AD N74F257AN N74F257N 74f257adc