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    TN2106N3 Price and Stock

    Microchip Technology Inc TN2106N3-G

    MOSFET N-CH 60V 300MA TO92-3
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    DigiKey TN2106N3-G Bag 540 1
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    Avnet Americas TN2106N3-G Bulk 17 Weeks, 4 Days 1
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    Mouser Electronics TN2106N3-G 2,025
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    Microchip Technology Inc TN2106N3-G 10,780
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    Onlinecomponents.com TN2106N3-G 1,800
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    TME TN2106N3-G 870 1
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    Microchip Technology Inc TN2106N3

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    Onlinecomponents.com TN2106N3
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    Supertex Inc TN2106N3

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    Quest Components TN2106N3 145
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    TN2106N3 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TN2106N3 Unknown Metal oxide N-channel FET, Enhancement Type Original PDF
    TN2106N3 Supertex N-Channel Enhancement-Mode Vertical DMOS FETs Original PDF
    TN2106N3-G Microchip Technology Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 300MA TO92-3 Original PDF

    TN2106N3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N1L SOT23

    Abstract: 1W SOT-23 marking n1l TN2106 TN2106K1 TN2106N3 TN2106ND
    Text: TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 2.0V TN2106K1 TN2106N3 TN2106ND where ❋ = 2-week alpha date code


    Original     		PDF TN2106 OT-23: O-236AB* TN2106K1 TN2106N3 TN2106ND OT-23. N1L SOT23 1W SOT-23 marking n1l TN2106 TN2106K1 TN2106N3 TN2106ND

    Untitled

    Abstract: No abstract text available
    Text: TN2106N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)300m @Temp (øC)150# IDM Max (@25øC Amb)1.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55


    Original     		PDF TN2106N3 Junc-Case125

    marking n1l

    Abstract: mos n-channel SOT-23 TN2106 TN2106K1 TN2106N3 TN2106ND sot-23 MARKING CODE GS 5
    Text: TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 2.0V TN2106K1 TN2106N3 TN2106ND where ❋ = 2-week alpha date code


    Original     		PDF TN2106 OT-23: O-236AB* TN2106K1 TN2106N3 TN2106ND OT-23. marking n1l mos n-channel SOT-23 TN2106 TN2106K1 TN2106N3 TN2106ND sot-23 MARKING CODE GS 5

    marking n1l

    Abstract: MOS 20V 0.5A n1l sot-23 TN2106K1 TN2106ND MARKING CODE 028a sot 23 marking 8A sot-23 marking codes N1l transistors sot-23 TN2106 TN2106N3
    Text: TN2106 TN2106 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die N1L❋ 60V 2.5Ω 1.6V TN2106K1 TN2106N3 TN2106ND


    Original     		PDF TN2106 OT-23: O-236AB* TN2106K1 TN2106N3 TN2106ND OT-23. marking n1l MOS 20V 0.5A n1l sot-23 TN2106K1 TN2106ND MARKING CODE 028a sot 23 marking 8A sot-23 marking codes N1l transistors sot-23 TN2106 TN2106N3

    SAG1

    Abstract: EL7156
    Text: TC253SPD 680āxā500 PIXEL CCD IMAGE SENSOR SOCS062B – JANUARY 2001 – REVISED MAY 2002 D Very Low Noise, High Sensitivity, D D D D D D D D D DUAL-IN-LINE PACKAGE TOP VIEW ODB 1 12 IAG1 IAG2 2 11 SAG1 SAG2 3 10 SUB SRG1 4 9 ADB SRG2 5 8 NC CMG 6 7 Vout


    Original     		PDF TC253SPD SOCS062B TX253SPD-30 TX253SPD-31 TX253SPD-B0 SAG1 EL7156

    1W SOT-23

    Abstract: TN2106K1-G
    Text: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN2106 O-236, TN2106 DSFP-TN2106 A020508 1W SOT-23 TN2106K1-G

    TO243AA

    Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
    Text: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G


    Original     		PDF 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G TO243AA TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB

    CCM TEXAS

    Abstract: peltier driver Peltier element image intensifier quantum efficiency data odb2 peltier cooler security ir sensor 1SS193 1SS226 CM500
    Text: TC253SPDĆB0 680 x 500 PIXEL IMPACTRON CCD IMAGE SENSOR JULY 2003 − SOCS084 D Very Low Noise, High Sensitivity D D D D D D D D D D D D D Electronically Variable High Resolution, 1/3-in Format, Solid State Charge-Coupled Device CCD Frame Transfer Image Sensor for Black and White,


    Original     		PDF TC253SPDB0 SOCS084 CCM TEXAS peltier driver Peltier element image intensifier quantum efficiency data odb2 peltier cooler security ir sensor 1SS193 1SS226 CM500

    EL7156

    Abstract: No abstract text available
    Text: TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 x x x x x x x x ፸፺ ᎚᎜ᎉ ፸፼ ᎚ᎈᎎ፹ ᎝᎖᎜᎛ ፸፷ ᎚᎜ᎉ ፸፹ ፸፽ ᎚ᎈᎎ፸ ᎀ ፸፻ ᎝ᎊ᎓ᎋ ፸፾ ᎗፯፴፰


    Original     		PDF TC247SPD-B0 SOCS091 EL7156

    TN2106K1-G

    Abstract: TO-236A 125OC TN2106 TN2106N3-G
    Text: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN2106 DSFP-TN2106 A091208 TN2106K1-G TO-236A 125OC TN2106 TN2106N3-G

    ir 499h

    Abstract: cm500 TC247SPD-B0 CCM TEXAS peltier TC247SPD EL7156CS HN1A01F EL7156
    Text: TC247SPD-B0 680 x 500 PIXEL IMPACTRONTM MONOCHROME CCD IMAGE SENSOR SOCS091 - DECEMBER 2004 - REVISED MARCH 2005 • • • • • • • • 13 SU B 15 SA G 2 V O U T 10 12 16 SA G 1 9 SU B 17 P - 8 NC VDD 19 14 V C LD 18 P(-) 7 SU B 11 20 P(+) 6 TH ER


    Original     		PDF TC247SPD-B0 SOCS091 ir 499h cm500 TC247SPD-B0 CCM TEXAS peltier TC247SPD EL7156CS HN1A01F EL7156

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability


    Original     		PDF TN2106 DSFP-TN2106 B080913

    DN2540N5

    Abstract: HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3
    Text: March 2010 SUPERTEX PRODUCTS TRANSITIONED TO RoHS COMPLIANT PACKAGING Leaded / Non-Green Part Number Obsolete Lead-Free / Green Part Number (Replacement) 2N7000 2N7002 2N7008 CL2K4 CL2N3 CL2N8 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5


    Original     		PDF 2N7000 2N7002 2N7008 DN2470K4 DN2530N3 DN2530N8 DN2535N3 DN2535N5 DN2540N3 DN2540N5 DN2540N5 HT0440LG TN2130K1-G hv5308pj-b TN2510N8 HT0440LG-G LR8N3-G LR645LG-G DN2530N3-G LR8N3

    EL7156

    Abstract: No abstract text available
    Text: TC253SPD 680āxā500 PIXEL CCD IMAGE SENSOR SOCS062B – JANUARY 2001 – REVISED MAY 2002 D Very Low Noise, High Sensitivity, D D D D D D D D D DUAL-IN-LINE PACKAGE TOP VIEW ODB 1 12 IAG1 IAG2 2 11 SAG1 SAG2 3 10 SUB SRG1 4 9 ADB SRG2 5 8 NC CMG 6 7 Vout


    Original     		PDF TC253SPD SOCS062B TC253SPD TC25eproduction EL7156

    Untitled

    Abstract: No abstract text available
    Text: TN2106 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


    Original     		PDF TN2106 DSFP-TN2106 A091208

    mosfet cross reference

    Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
    Text: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G


    Original     		PDF 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross

    TC285SPD-B0

    Abstract: Peltier element 74AC244 CM500 EL7156CS TN2106 TP2104 ionization sensor
    Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame


    Original     		PDF TC285SPD-B0 SOCS093 30Frame/s TC285SPD-B0 Peltier element 74AC244 CM500 EL7156CS TN2106 TP2104 ionization sensor

    74AC244

    Abstract: TC285SPD-B0 1SS193 CCM TEXAS CM500 EL7156CS TN2106 TP2104 TC285-B0 NES 1004
    Text: TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device CCD Frame


    Original     		PDF TC285SPD-B0 SOCS093 30Frame/s 74AC244 TC285SPD-B0 1SS193 CCM TEXAS CM500 EL7156CS TN2106 TP2104 TC285-B0 NES 1004

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability


    Original     		PDF VN2210 VN2210 DSFP-VN2210 E082013

    PLCC-6 5050

    Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
    Text: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case


    Original     		PDF SA146RS PLCC-6 5050 P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


    OCR Scan     		PDF 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2

    TN2106ND

    Abstract: No abstract text available
    Text: TN2106 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: b v dss/ ^DS ON V(3S(tfi) BVdgs (max) (max) TO-236AB* TO-92 Die N 1L* 60V 2 .5 0 2.0V TN2106K1 TN2106N3


    OCR Scan     		PDF TN2106 O-236AB* TN2106K1 OT-23: TN2106N3 TN2106ND OT-23. TN2106ND

    Untitled

    Abstract: No abstract text available
    Text: TN2106 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for SOT-23: b v dss/ R d S ON ^GS(th) b v dgs (max) (max) TO-236AB* TO-92 Die 60V 2.5Q. 2.0V TN2106K1 TN2106N3 TN2106ND


    OCR Scan     		PDF TN2106 OT-23: O-236AB* TN2106K1 TN2106N3 TN2106ND