TN301 Search Results

diode 27c

Abstract: TN3012L b0704
Contextual Info: TN3012L Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary V BR DSS Min (V) rDS(on) Max (W) 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V VGS(th) (V) ID (A) 0.8 to 3 0.18 Features Benefits Applications D D D D D D D D D D D HighĆVoltage Drivers: Relays, Solenoids,

Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

TN3012L

Abstract: 70206
Contextual Info: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,

CEB120

Contextual Info: TN3019A TN3019A C B TO-226 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*

transistor TD-100 le

Abstract: pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
Contextual Info: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*

Contextual Info: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS M in (v ) fDSion) Max (Q ) 12 0 V q s 300 20 a Vqs = 4.5 V Id (A) 0.8 to 3 0.18 BENEFITS FEATURES • • • • • VGS(.h)(V) = 1OV APPLICATIONS Low On-Resistance: 9 Q • Low Offset Voltage

OF TRANSISTOR BC337

Abstract: TRANSISTOR BC337-25 transistor 33725 TN3019A bc337 m transistor BC337-16 BC337-16 BC337-25 CBVK741B019 F63TNR
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

Contextual Info: TN3012 / SN3012 Amplifier Performance Datasheet Cross Reference Guide TN3012 / SN3012* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 200.0 - 450.0 MHz Gain 22.0 dB Typical 21.0 dB Min Noise Figure 3.2 dB Typical

Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

mpsa06 539

Contextual Info: ¿2h STtiGhGG O E T ia ^ I NPN Transistors a Discrete POWER & Signal Technologies National NPN Medium Power ¡'«icond.cor- V Device No. Case Style PN3568 TO-92 92 TN3019A TO-226 (99) MPS80S CBO VCEO V EBO (V) Min (V) Min (V) Min 80 60 5 140 80 7 <nA)@ "

Contextual Info: Tem ic TN3012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS M in (V) r DS<on) M a x (Q ) ^GSrth) (V) I d (A) 0.8 to 3 0.18 12@ V GS= 1 0 V 300 20 @ VGS * 4.5 V Features Benefits • • • • • •

Contextual Info: TN3012 / SN3012 Amplifier Performance Datasheet Cross Reference Guide TN3012 / SN3012* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 200.0 - 450.0 MHz Gain 22.0 dB Typical 21.0 dB Min Noise Figure 3.2 dB Typical

to-226aa

Abstract: TN3012L
Contextual Info: TN3012L N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS Min (V) 300 rDS(on) Max (W) 12 @ VGS = 10 V VGS(th) (V) ID (A) 0.8 to 3 0.18 20 @ VGS = 4.5 V Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,

TN3019

Abstract: 2N3019
Contextual Info: 2N3019/TN3019 National Semiconductor 2N3019 TN3019 NPN General Purpose Amplifier Electrical Characteristics T a = 25°C unless otherw ise noted Symbol Min Parameter Max Units OFF CHARACTERISTICS V BR CEO C ollector-E m itter Breakdow n Voltage, (N ote 1) (lc = 30 mAdc, lB = 0)

si167

Contextual Info: ggM C O N O U C TO R TN3019A NPN General Purpose Amplifier This device is designed for general purpose medium power am plifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. AbSOlUtG Maximum RâtinÇjS

TN3019A

Contextual Info: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*

FP3011

Contextual Info: Available as: RF AMPLIFIER MODEL TM3011 TM3011, 4 Pin TO-8 T4 TN3011, 4 Pin Surface Mount (SM3) FP3011, 4 Pin Flatpack (FP4) BX3011, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +49 dBm (Typ.)

bc337 cross-reference

Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

TN3012L

Contextual Info: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,

Contextual Info: TN3010 / SN3010 Amplifier Performance Datasheet Cross Reference Guide TN3010 / SN3010* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 5.0 - 500.0 MHz Gain 30.0 dB Typical 28.0 dB Min Noise Figure 3.5 dB Typical

Contextual Info: H E M iQ Q N P U S T O R TN3019A TO-226 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum RatinQS

TN3019A

Contextual Info: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*

Contextual Info: RF AMPLIFIER MODEL TM3012 Available as: TM3012, 4 Pin TO-8 T4 TN3012, 4 Pin Surface Mount (SM3) FP3012, 4 Pin Flatpack (FP4) BX3012, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C „High Gain: 22 dB Typical „Output Power: +14 dBm Typical

TN3012L

Contextual Info: TN3012L Vishay Siliconix N-Channel 300-V D-S MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 0.8 to 3 0.18 12 @ VGS = 10 V 300 20 @ VGS = 4.5 V FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids,