TN3019 Search Results

Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

CEB120

Contextual Info: TN3019A TN3019A C B TO-226 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*

transistor TD-100 le

Abstract: pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
Contextual Info: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*

OF TRANSISTOR BC337

Abstract: TRANSISTOR BC337-25 transistor 33725 TN3019A bc337 m transistor BC337-16 BC337-16 BC337-25 CBVK741B019 F63TNR
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

mpsa06 539

Contextual Info: ¿2h STtiGhGG O E T ia ^ I NPN Transistors a Discrete POWER & Signal Technologies National NPN Medium Power ¡'«icond.cor- V Device No. Case Style PN3568 TO-92 92 TN3019A TO-226 (99) MPS80S CBO VCEO V EBO (V) Min (V) Min (V) Min 80 60 5 140 80 7 <nA)@ "

TN3019

Abstract: 2N3019
Contextual Info: 2N3019/TN3019 National Semiconductor 2N3019 TN3019 NPN General Purpose Amplifier Electrical Characteristics T a = 25°C unless otherw ise noted Symbol Min Parameter Max Units OFF CHARACTERISTICS V BR CEO C ollector-E m itter Breakdow n Voltage, (N ote 1) (lc = 30 mAdc, lB = 0)

si167

Contextual Info: ggM C O N O U C TO R TN3019A NPN General Purpose Amplifier This device is designed for general purpose medium power am plifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. AbSOlUtG Maximum RâtinÇjS

TN3019A

Contextual Info: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*

bc337 cross-reference

Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

Contextual Info: H E M iQ Q N P U S T O R TN3019A TO-226 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum RatinQS

TN3019A

Contextual Info: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*

C 337-25

Abstract: C 33725 BC337-25 NPN general purpose transistor BC337 BC337-16 BC337 NPN transistor datasheet BC337 bc33716 BC-337-16 BC33725
Contextual Info: BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

common collector amplifier circuit designing

Abstract: bd113 npn 4111 25CC TN3019A
Contextual Info: Semiconductor"1 TN3019A D iscrete P O W ER & S ig n a l Technologies ALM National TN3019A c TO-226 Bc NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12.

TN3019

Contextual Info: RF AMPLIFIER MODEL TM3019 Available as: Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +55 dBm Typ. Second Order Two Tone Intercept Point . +50 dBm (Typ.) Third Order Two Tone Intercept Point . +36 dBm (Typ.)

tn637

Abstract: TN2219 TN2219A TN2270 TN3019 TN3020 TN3053 TN368 TN3742 TN391
Contextual Info: TO*237 Plastic Package Translators NPN Maximum Ratings Type No. TN2219 TN2219A TN2270 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO Pd (V) Min (V) Min (V) Min (W) Tc=25°c 60 30 5 0.75 75 60 40 45 6 7 Ô.75 0.75 (A) (A)

MPSD05

Abstract: MPSA05 MPSA06 MPSA55 MPSA56 MPSD55 MSB492 PN2221 PN2221A PN2906
Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY MPSA05 MPSA06 MPSA55 MPSA56 MPSD05 N N P P N MAXIMUM RATINGS CASE TO-92A TO-92A TO-92A TO-92A TO-92A Pd IC VCEO mW (A) (V) 625 625 625 625 350 0.5 0.5 0.5 0.5 0.5 60 80 60 80 25 HFE min 50 50 50 50

2N6730

Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
Contextual Info: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250

CENW64

Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
Contextual Info: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50

2N6718

Abstract: 2N6719 ATX smps troubleshooting 2N6714 2N6715 2N6716 2N6717 2N6720 2N6721 2N6722
Contextual Info: Power Transistors TO-237 Case TYPE NO. IC PD BVCBO V MIN BVCEO *BVCES (V) MIN (A) MAX (W) hFE @ IC VCE(SAT) @ IC MIN MAX fT (mA) (V) MAX (mA) (MHz) MIN 250 1,000 0.5 1,000 50 250 1,000 0.5 1,000 50 50 250 250 0.35 250 50 80 50 250 250 0.35 250 50 100 100

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor 2n3904 TRANSISTOR PNP PNP 2N3904 TRANSISTOR 3182 2N3906 NPN Transistor PNP switching transistor 2N3906 transistor 338 TN6715A
Contextual Info: Section 3 Bipolar Transistors PN100 / PN100A / MMBT100 / MMBT100A NPN GPA . 3-4 PN200 / PN200A / MMBT200 / MMBT200A PNP GPA . 3-7 FPN330 / FPN330A NPN Low Saturation Transistor . 3-11

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

2A 5A10

Abstract: NSD106 NSD104 NSD6178 TO-202 transistor NPN 2N4239 2N5321 D40D10 D40D11 D40D13
Contextual Info: NATL SEMICÔND DISCRETE 2SE D- • bSG113Q GQ377âS 1 ■ 7"^/ NPN Medium Power Transistors by Ascending Vceo (Continued) H fe @ lc /V Ce Vce (sat) (V) ’ Vceo (V) Min Max (mA/V) NSE181 PN3568 TN2017 60 60 60 50 40 50 250 120 200 10/1 150/1 200/10 0.9 0.25