TO 206AF Search Results

Contextual Info: NT N-Channel JFETs n rS ilic o n ix J.Æ incorporated DEVICE TYPE PACKAGE Single TO-92 TO-226AA • PN4117A, PN4118A, PN4119A Single TO-72 (TO-206AF) • 2N4117A, 2N4118A, 2N4119A Chip Chip • Available as NT1CHP, NT2CHP, NT3CHP TYPICAL CHARACTERISTICS

mfe131

Abstract: MFE130 FE130 MFE132
Contextual Info: MOTOROLA SC XSTRS/R F 1SE D bBbTaSM 00flfa7B»t b | MFE130 thru MFE132 T'- '2 , C A S E 20-03, STYLE 9 TO-72 (TO-206AF MAXIMUM RATINGS Rating U n it Sym bol V alu e vds 25 Vdc D rain Current Id 30 m Adc To tal D evice D issip a tion @ T/\ = 25°C (Package Lim itation)

J FET RF Cascode Input

Abstract: sd2200 SD2200 SEMICONDUCTOR SD2200DE topaz
Contextual Info: TOPAZ SEMICONDUCTOR DSE D g ^0fl522b □ □□1,050 1 | ' T - yi-zf SD22ÛQ SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-206AF TO-72 Hermetic Package SD2200DE SD2200DE/R with Shorting Ring on leads 20Vt 750

Contextual Info: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage

941L

Abstract: Teledyne Semiconductor teledyne 302 0171 02
Contextual Info: TELEDYNE COMPONENTS 2ÖE D H 0^171,02 üüOfc.4BS S M _ T - SD2200 SE M IC O N D U C T O R _ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-206AF TO-72 Hermetic Package SD2200DB SD2200DE/R

RT 083

Contextual Info: TELEDYNE EÖE D COMPONENTS • ä^l7t.üa 0UUb3äi E _ m - T"3 S-£ST SD217, SD219 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FET ORDERING INFORMATION TO-206AF TO-72 Package SD219DE SD219DE/R SD219CHP 6.0 ohm, 25V V s b = 20V rnln

BF689

Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36
Contextual Info: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200

Contextual Info: , One. J.£ii£u 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 3N155 TO-72 (TO-206AF) MAXIMUM RATINGS Rating Symbol Value Unit VDS VDQ VGS ID PD ±36 Vdo Vdc Drain-Source Voltage Drain-Gate Voltage

SD306DE

Abstract: SD306 SD304DE SD306CHP To206AF SD30 SD304 Topaz Semiconductor Topaz Semiconductor sd304
Contextual Info: TOPAZ SEMICONDUCTOR OSE D | "lOÖSaat, ÜO O l O a i 'ÏÏ’tMmmæ fl I SD304, SD306 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE DUAL ATE D-MOS FET ORDERING INFORMATION Sorted Chips in Waffle Pack TO-206AF TO-72 Package Shorting Rings SD304CHP SD304DE SD304DE/R

To206AF

Abstract: SD2100 SD2100DE vgd schematic diagram
Contextual Info: TOPAZ SE MIC ONDUCTOR OSE D Q ^OflSSab 0001053 0 | SE M IC O N D U C T O R _ S D 2 M N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-206AF TO-72 Hermetic Package with Shorting Ring on leads SD2100DE SD2100DE/R Description '•

2N4352

Abstract: mosfet equivalent
Contextual Info: MOTOROLA SC XSTRS/R F 15E D | b3b?a5»t OOabbaT 1 | 2N4352 CASE 20-03, STYLE 2 TO-72 TO-206AF MAXIMUM RATINGS Symbol Value Unît Drain-Source Voltage Vd s 25 Vdc Draln-Gate Voltage Vd g 30 Vdc Gate-Source Voltage VGS ±30 Vdc Rating Drain Current •d 30

2n3824

Abstract: 2N3822 2N3824 equivalent 2N3822 MOTOROLA 2N3822 equivalent 2N4220 MOTOROLA 2n3821 2N3621
Contextual Info: MOTOROLA SC XSTRS/R F 12E 0 | fa3fa7a5»4 0Dabbl3 fl | 2N3821, 2N3822 2N3824 CASE 20-03, STYLE 1 TO-72 TO-206AF M AXIM UM RATINGS Symbol Value Drain-Source Voltage VDS 50 Vdc Drain-Gate Voltage Vd g 50 Vdc Gate-Source Voltage Rating Unit Vg S -5 0 Vdc Drain Current

MFE121

Abstract: MFE120 MFE122 T7210
Contextual Info: MOTORCLA SC XSTRS/R F 15E D | b3fc.7a5M Q0afci7g0 1 [ MFE120 T~Z! , thru MFE122 CASE 20-03, STYLE 9 TO-72 TO-206AF M A X IM U M RATINGS Symbol Value VDS + 25 Vdc Drain Current >D 30 mAdc Total Device Dissipation @ T /\ - 25°C Derate above 25°C PD 300 1.7

SD306

Abstract: SD306DE SD306CHP T555 teledyne fet 50 33g
Contextual Info: t f i F flV N E 2⣠COM PON ENTS ö^lTbOH 0Q0b3TÛ 3 T-31-25 D SD304, SD306 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE DUAL GATE D-MOS FET ORDERING INFORMATION Sorted Chips In Waffle Pack TO-206AF TO-72 Package ShortlnaFtlrm* SD 304CHP SD 304DE SD 304DE/R

2N3909

Abstract: 2N3909A
Contextual Info: MOTORGLA SC XSTRS/R F 12E 0 I b3b?SS4 OQflbblb 3 | 2N3909, A CASE 20-03, STYLE 5 TO-72 TO-206AF 3 Drain MAXIMUM RATINGS Symbol Value Drain-Source Voltage Rating Vd S -2 0 Vdc Drain-Gate Voltage Vd G -2 0 Vdc Vg SR 20 Vdc Reverse Gate-Source Voltage Forward Gate Current

2N3330

Abstract: JFET 2N3330
Contextual Info: M OT O R O L A SC X S T R S /R F 12E D 1 b3b7g5t| OOflbbOb 2N3330 0 1 ' CASE 20-03, STYLE 5 TO-72 TO-206AF MAXIMUM RATINGS Symbol Valus Unit Vdg 20 Vdc Vgsr 20 Vdc Gate Current Ig 10 mAdc Total Device Dissipation @ T/\ = 25°C Derate above 25CC Pd 300 1.7

mosfet equivalent

Abstract: 3N157 3N158 C96d
Contextual Info: MOTOROLA SC -CXSTRS/R F> Tb 6367254 MOTOROLA SC XSTRS/R F M^b3b?aS4 96D D0fl2ti03 82603 T ' 3 D - 7 - a s 3N157 3N158 CASE 20-03, STYLE 2 TO-72 (TO-206AF) M A X I M U M R A T IN G S Symbol Value Unit Orain-Source Voltage* Vds ±35 Vdc Drain-Gate Voltage*

3N155

Abstract: 3n157
Contextual Info: MOTOROLA SC XSTRS/R F T~3iï-2£~ 15E D | k3b?554 G0flt.b74 b | 3N155 ' CASE 20-03, STYLE 2 TO-72 TO-206AF M A X I M U M R A T IN G S Sym bol Valus Draln-Source Voltage Vd s ±35 Vdc Drain-Gate Voltage VDG ±50 Vdc Gate-Source Voltage Rating Unit VGS ±50

Contextual Info: jre s ft 3N163 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY B O T T O M VIEW TO -7 2 TO-206AF PART NUM BER V (BR|DSS 3N163 -40 250 -50 3N164 -30 300 -50 "W 1 • d (A) 1 2 3 4 Performance Curves: MRA DRAIN G ATE SUBSTR ATE, C A S E SO URCE

2N3994

Abstract: diodes 415 2n3993
Contextual Info: MOTOROLA SC 15E D XSTRS/R F I OOflbbLfl 7 | fa3fa?aSM 2N3993 2N3994 ' CASE 20-03, STYLE 5 TO-72 TO-206AF 2 MAXIMUM RATINGS 4 Cas« Gate Rating Drain-Source Voltage Drain-G ate Voltage Sym bol Value U n it VDS -2 5 Vdc Vdc 1 Source Vdg -2 5 vgsr 25 Vdc Forward Gate C urrent

2N4222

Abstract: 2N4221 2N4220 2n4221a 2N4222A 2N4220A
Contextual Info: I 2N4220, A thru 2N4222, A C A SE 20 03, STY LE 3 TO-72 TO-206AF 1 Drain MAXIMUM RATINGS Rating Symbol Valut Draln-Source Voltage vds 30 Unit Vdc Dratn-Gate Voltage vdg 30 Vdc Gate-Source Voltage Vg s Id -3 0 Vdc 16 300 2 mAdc mW mW« JFETs LOW FREQUENCY, LOW N O ISE

2N3307 MOTOROLA

Abstract: 2N3307 2N3308 GE-17
Contextual Info: M O T OR OL A SC X S T R S /R F la E ° I b3t?2S l1 000^351 fe, | 2N3307 2N3308 CASE 20-03, STYLE 10 TO-72 TO-206AF M A X IM U M RATINGS Symbol 2N3307 2N3308 Unit VCEO 35 25 Vdc Colfector*Emitt6r Voltage Vc es 40 30 Vdc Collector-Base Voltage VCBO 40 30

2N918 motorola

Contextual Info: 2N918 JAN, JTX, JTXV AVAILABLE CASE 20-03, STYLE 10 TO-72 {TO-206AFJ M A X IM U M R ATING S 3 C ollector Symbol Rating Value Unit C ollecto r-E m itte r V oltag e VCEO 15 Vdc Co Ilector-B ase V oltage VCBO 30 Vdc E m itter-B ase V oltag e v EBO 3.0 Vdc ic

3N157

Contextual Info: M O T O R C L A SC X S T R S/ R F 15E D | b3t.72S4 00flfc,fc,75 fl | 3N157 C ASE 20-03, STYLE 2 TO-72 {TO-206AF M A X I M U M R A T IN G S Sym bol Value Unit Drain-Source Voltage* Vd s ±35 Vdc Drain-Gate Voltage* Vdg ±50 Vdc Gate-Source Voltage* Vg s ±50