Untitled
Abstract: No abstract text available
Text: TO-247 2 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE FOR RECTIFIERS ONLY INCHES TERM. 3 A E ØS ØP MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.18 0.190 4.58 4.82 - b 0.04 0.051 1.17 1.29 2, 3 b1 0.06 0.070 1.53 1.77 1, 2 c 0.02 0.026 0.51 0.66 1, 2, 3 Q ØR
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O-247
O-247
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Untitled
Abstract: No abstract text available
Text: TO-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE A E INCHES TERM. 4 ØS ØP MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.18 0.190 4.58 4.82 - b 0.04 0.051 1.17 1.29 2, 3 Q ØR D L1 b1 c 2 3 e 0.070 1.53 1.77 1, 2 0.09 0.105 2.42 2.66 1, 2 0.66 1, 2, 3 c 0.02
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O-247
O-247
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Untitled
Abstract: No abstract text available
Text: Stretch-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE A E INCHES TERM. 4 MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.18 0.190 4.58 4.82 - b 0.04 0.051 1.17 1.29 2, 3 Q ØR D L1 b1 c 2 3 e 0.070 1.53 1.77 1, 2 0.09 0.105 2.42 2.66 1, 2 0.66 1, 2, 3 c 0.02
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Stretch-247
O-247
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HRG75100
Abstract: RHRG75100 RHRG7570 RHRG7580 RHRG7590
Text: RHRG7570, RHRG7580, RHRG7590, RHRG75100 75A, 700V - 1000V Hyperfast Diode March 2001 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC STYLE TO-247
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RHRG7570,
RHRG7580,
RHRG7590,
RHRG75100
O-247
175oC
RHRG7590
HRG75100
RHRG75100
RHRG7570
RHRG7580
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HRG75100
Abstract: RHRG75100 RHRG7570 RHRG7580 RHRG7590
Text: RHRG7570, RHRG7580, RHRG7590, RHRG75100 75A, 700V - 1000V Hyperfast Diode January 2002 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns • Operating Temperature . . . . . . . . . . . . . . . . . . . JEDEC STYLE TO-247
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RHRG7570,
RHRG7580,
RHRG7590,
RHRG75100
O-247
175oC
RHRG7590
HRG75100
RHRG75100
RHRG7570
RHRG7580
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75945p
Abstract: 100V 10A NMOS TO220 AN9321 AN9322 HUF75945G3 HUF75945P3 HUF75945S3ST TB334
Text: HUF75945G3, HUF75945P3, HUF75945S3ST Data Sheet December 2001 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.071Ω, VGS = 10V DRAIN (TAB) JEDEC TO-220AB
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HUF75945G3,
HUF75945P3,
HUF75945S3ST
O-247
O-220AB
O-263AB
HUF75945G3
75945P
75945p
100V 10A NMOS TO220
AN9321
AN9322
HUF75945G3
HUF75945P3
HUF75945S3ST
TB334
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G30N60B3D
Abstract: G30N60B3 HGT4E30N60B3DS G30N60 HGTG30N60B3D LD26 TA49053 TA49170 TA49172
Text: HGTG30N60B3D, HGT4E30N60B3DS Data Sheet December 2001 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Packaging JEDEC STYLE TO-247 E The HGTG30N60B3D, and HGT4E30N60B3DS are MOS gated high voltage switching devices combining the best
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HGTG30N60B3D,
HGT4E30N60B3DS
O-247
HGT4E30N60B3DS
150oC.
TA49170.
TA49053.
O-268AA
G30N60B3D
G30N60B3
G30N60
HGTG30N60B3D
LD26
TA49053
TA49170
TA49172
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Untitled
Abstract: No abstract text available
Text: FCH47N60_F085 N-Channel MOSFET 600V, 47A, 79mΩ D Features Typ rDS on = 64mΩ at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant Qualified to AEC Q101 TO-247 G D S Description SuperFETTM is Fairchild’s proprietary new generation of high
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FCH47N60
190nC
O-247
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Untitled
Abstract: No abstract text available
Text: HUF75945G3, HUF75945P3, HUF75945S3ST Data Sheet December 2000 File Number 5009 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.071Ω, VGS = 10V DRAIN (TAB)
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HUF75945G3,
HUF75945P3,
HUF75945S3ST
O-247
O-220AB
O-263AB
HUF75945G3
75945P
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Untitled
Abstract: No abstract text available
Text: FCH47N60F_F085 N-Channel MOSFET 600V, 47A, 75mΩ D Features Typ rDS on = 66mΩ at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant Qualified to AEC Q101 TO-247 G D S Description SuperFETTM is Fairchild’s proprietary new generation of high
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FCH47N60F
190nC
O-247
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65e9
Abstract: n8 221 75945P AN9321 AN9322 HUF75945G3 HUF75945P3 HUF75945S3ST TB334 100V 10A NMOS TO220
Text: HUF75945G3, HUF75945P3, HUF75945S3ST Data Sheet December 2000 File Number 5009 38A, 200V, 0.071 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.071Ω, VGS = 10V DRAIN (TAB)
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HUF75945G3,
HUF75945P3,
HUF75945S3ST
O-247
O-220AB
O-263AB
HUF75945G3
75945P
65e9
n8 221
75945P
AN9321
AN9322
HUF75945G3
HUF75945P3
HUF75945S3ST
TB334
100V 10A NMOS TO220
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75652G
Abstract: AN7254 AN7260 AN9321 AN9322 HUF75652G3 TB334
Text: HUF75652G3 Data Sheet October 1999 File Number 4746.1 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB HUF75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models
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HUF75652G3
O-247
75652G
75652G
AN7254
AN7260
AN9321
AN9322
HUF75652G3
TB334
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IRFP150N
Abstract: 65e9 65E8 AN7254 AN7260 AN9321 AN9322 TB334
Text: IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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IRFP150N
O-247
IRFP150N
65e9
65E8
AN7254
AN7260
AN9321
AN9322
TB334
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AN7254
Abstract: AN7260 AN9321 AN9322 IRFP140N TB334 IRFP140NT
Text: IRFP140N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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IRFP140N
O-247
AN7254
AN7260
AN9321
AN9322
IRFP140N
TB334
IRFP140NT
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75852G
Abstract: AN7254 AN7260 AN9321 AN9322 HUF75852G3 TB334
Text: HUF75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUF75852G3
O-247
75852G
75852G
AN7254
AN7260
AN9321
AN9322
HUF75852G3
TB334
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rfg60p06
Abstract: No abstract text available
Text: RFG60P06E Data Sheet July 1999 60A, 60V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET eyrds ter- PART NUMBER RFG60P06E PACKAGE TO-247 3989.3 Features • 60A, 60V Title The RFG60P06E P-Channel power MOSFET is FG6 manufactured using the MegaFET process. This process,
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RFG60P06E
RFG60P06E
TA09836.
rfg60p06
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Untitled
Abstract: No abstract text available
Text: HUF75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUF75852G3
O-247
75852G
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75852G
Abstract: No abstract text available
Text: HUFA75852G3_F085 Data Sheet December 2011 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Peak Current vs Pulse Width Curve • UIS Rating Curve
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HUFA75852G3
O-247
75852G
75852G
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Untitled
Abstract: No abstract text available
Text: IRFP140N Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Title FP1 N bt A, 0V, 40 m, Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models
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IRFP140N
O-247
IRFP140N
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75852G
Abstract: AN7254 AN9321 AN9322 HUFA75852G3 TB334
Text: HUFA75852G3 Data Sheet December 2001 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUFA75852G3
O-247
75852G
75852G
AN7254
AN9321
AN9322
HUFA75852G3
TB334
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Untitled
Abstract: No abstract text available
Text: HUFA75852G3_F085 Data Sheet December 2011 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Peak Current vs Pulse Width Curve • UIS Rating Curve
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HUFA75852G3
O-247
75852G
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40V 60A MOSFET
Abstract: RFG60P05E TB334
Text: RFG60P05E Data Sheet July 1999 60A, 50V, 0.030 Ohm, ESD Rated, P-Channel Power MOSFET RFG60P05E TO-247 • 60A, 50V • rDS ON = 0.030Ω • Temperature Compensating PSPICE Model • 2kV ESD Rated • Peak Current vs Pulse Width Curve • UIS Rating Curve
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RFG60P05E
O-247
175oC
TB334
40V 60A MOSFET
RFG60P05E
TB334
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75652G
Abstract: 75652 AN7254 AN7260 AN9321 AN9322 HUF75652G3 TB334 HUF75652G
Text: HUF75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 SOURCE DRAIN GATE DRAIN TAB HUF75652G3 Features • Ultra Low On-Resistance - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER
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HUF75652G3
O-247
75652G
75652G
75652
AN7254
AN7260
AN9321
AN9322
HUF75652G3
TB334
HUF75652G
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Untitled
Abstract: No abstract text available
Text: HUF75852G3 Data Sheet October 2013 N-Channel UltraFET Power MOSFET 150 V, 75 A, 16 mΩ Features Packaging JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.016Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER
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HUF75852G3
O-247
75852G
HUF75852G3
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