TO-251 FAIRCHILD Search Results

TO-251

Abstract: TO-251 weight TO-251 fairchild TO-251 Package
Contextual Info: TO-251 Package Dimensions TO-251 FS PKG Code 39 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.44 A 6.80 6.35 5.54 5.14 2.50 2.10 1.27 0.50 1.52 0.70 1 C 2 0.60 0.40 6.30 5.90 2.28 1.60 3 1.14

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

084DL

Contextual Info: TO-251 2 LEAD JEDEC STYLE TO-251 PLASTIC PACKAGE FOR RECTIFIERS ONLY E b2 H1 INCHES A A1 TERM. 1 SEATING PLANE D b1 L1 L 1 MIN MAX MIN MAX 2 J1 e1 NOTES A 0.086 0.094 2.19 2.38 - A1 0.018 0.022 0.46 0.55 3, 4 b 0.028 0.032 0.72 0.81 3, 4 b1 0.033 0.040 0.84

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA733 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage VCBO= -60V • Complement to KSC945 ABSOLUTE MAXIMUM RATINGS TA =251! C haracteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: KSMD3P50 / KSMU3P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -2.1A, -500V, RDS on = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD1P50 / KSMU1P50 500V P-Channel MOSFET TO-252 TO-251 Features • • • • • • -1.2A, -500V, RDS on = 10.5Ω @VGS = -10 V Low gate charge ( typical 11 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: KSMD6P25 / KSMU6P25 250V P-Channel MOSFET TO-252 Features • • • • • • TO-251 -4.7A, -250V, RDS on = 1.1Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability General Description

Contextual Info: I R C H November 1988 iL D s e m ic o n d u c t o r Revised November 1999 74A C 251 • 74A C T251 8 -In p u t M u ltip le x e r w ith 3 -S T A T E O u tp u t General Description Features The AC/ACT251 is a high-speed 8-input digital multiplexer. It provides, in one package, the ability to select one bit of

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

FRP1000

Abstract: FRP1005 FRP1010 FRP1015 FRP1020 FRP2005CC FRP2010CC FRP2015CC FRP2020CC FRP202
Contextual Info: ~fl4 DE | 3 4 t i t 7 M 0DS7fl3ô 1 84D 2 7 8 3 8 3469674 FAIRCHILD SEMICONDUCTOR FRP1000/FRP2000CC Series Ultra-fast POWERpIanar Rectifiers 10-20 A, 50-200 V F A IR C H ILD A Schlumberger Company Power And Discrete Division Description _ _ / TO-220AC

IRF350

Abstract: 57113 IRF350-353 IRF3503
Contextual Info: FAIRCHILD SEMICONDUCTOR â4 0GE7T1G S IRF350-353 N-channel Pow er MOSFETs, 15 A, 350 V /4 0 0 V £ £ ii£ £ Ü Ü £ A Schlumberger Company _ _ Power And Discrete Division Description These devices are n-channel, enhancement mode, power M OSFETs designed especially for high voltage, high speed

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

30u60

Abstract: ixys dsei 8-06 ixys dsei STTH 3060 MUR 8120 ixys dsei 12-12 10U60 RHRG 8120 40U60 ixys dsei 60-06
Contextual Info: Cross Reference List EmCon Diodes Product Name Company VRRM [V] Package IF @ [A] 125°C Typ VF [V] 25°C di/dt=-200A/µs VR=200V Typ Typ tRR [ns] Qrr [nC] 25°C 25°C 40 28 40 28 Special features Closest Infineon Equivalent IR IR HFA 04 HFA 04 TB60S TB60 600

CNY 14-4

Abstract: 0q00 ScansUX1003
Contextual Info: 4705/4705B ARITHMETIC LOGIC REGISTER STACK FAIRCHILD C M O S M A C R O LO G IC 1 DESCR IPTIO N — The A rith m e tic Logic Register Stack A LR S is designed to im plem ent accum ulators in high performance m icroprogram m ed digital systems. The device contains

Contextual Info: r* 1 " 7 J nv ' 4705B/4705BX ARITHMETIC LOGIC REGISTER STACK FAIRCHILD CMOS MACROLOGIC D E S C R IP T IO N — T h e A rith m e tic Logic Register Stack A L R S is designed to im plem ent accumulators in high perform ance m icroprogram m ed digital systems. The device contains

ac voltage stabilizer circuit diagram

Abstract: ac to AC voltage stabilizer circuit stabiliser circuit diagram design diagram of ac voltage stabilizer ac voltage stabiliser circuit diagram S2209 KA33V ac voltage stabiliser schematic circuit diagram power system stabilizer voltage stabilizer schematic diagram
Contextual Info: KA33V VOLTAGE STABILIZER SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT VO LTAG E STABILIZER FOR ELECTRONIC TUNER T h e KA33V is a m onolithic integrated voltage stab ilize r e specially designed as voltage supp lier for electronic tuners. FEATURES • Low T e m p era ture C oefficient

FAN8026D

Abstract: KA3026D FAN8026DTF
Contextual Info: FAIRCHILD www.fairchildsemi.com FAN8026D KA3026D 4-CH Motor Drive 1C Features Description • • • • • • The FAN8026D is a monolithic integrated circuit, suitable for a 1-ch (forward.reverse) control DC motor driver and a 3-ch motor driver which drives the focus actuator,tracking

80c98

Abstract: 88c29 80c95 82C19 74 hc 589 act 4514 DATASHEET lcx 574 81LS97 81LS95 93L38
Contextual Info: Revised April 1999 Fairchild’s Logic Functional Cross-Reference Guide FAST FASTr ALS AS LS S TTL ABT Function 00 X X 02 X X 03 04 CROSSVOLT FACT VCX LCX LVX LVT LVQ X X X X ACT FACT QS ACQ X X X X X X X X X X X X X X X X X X X X X X X X X X X X X 06 X X

FDP39N20

Contextual Info: TM FDP39N20 200V N-Channel MOSFET Features Description • 39A, 300V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 38 nC)

IC str 1229

Abstract: fairchild 90028 L4W 63
Contextual Info: FAIRCHILD SALES REPRESENTATIVES C A LIFO R N IA CELTEC COMPANY 7380 C lairem ont Mesa Blvd., Suite 109 San Diego, C alifornia 92111 Tel: 714-279-7961 TWX: 910 -33 5-15 12 KANSAS B.C. ELECTRONICS 1015 W est Santa Fe Olathe, Kansas 66061 Tel: 913 -78 2-66 96 TWX: 910 -74 9-64 14

N mosfet 100v 200A

Abstract: FDPF39N20 200v mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v FDP39N20 234AA
Contextual Info: UniFET TM FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description • 39A, 200V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

cgs resistor

Abstract: AN-7017 smd mosfet MOSFET SMD pp M11 mosfet
Contextual Info: www.fairchildsemi.com AN-7017 Reducing Power Losses in MOSFETs by Controlling Gate Parameters Alan Elbanhawy, Fairchild Semiconductor Introduction The gate Equivalent Series Resistance ESR has been recognized as a factor affecting the losses in MOSFETs for a

Contextual Info: TM UniFET FDP39N20 / FDPF39N20 200V N-Channel MOSFET Features Description • 39A, 200V, RDS on = 0.066Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: Discrete POWER & Signal Technologies SEMICONDUCTOR KBP005M/3N246 - KBP10M/3N252 KBP005M/3N246 g^ggHtyg - KBP10M/3N252 Features • Surge overload rating: 50 amperes peak. • Reliable low cost construction utilizing molded plastic technique. 1.5 Ampere Bridge Rectifiers