TO-252 N-CHANNEL MOSFET Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading

CHM25N15LPAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)

CHM05N65PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)

D2N60

Abstract: U2N60
Contextual Info: PJD2N60 / PJU2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK

d1740

Abstract: NP55N04SUG
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP55N04SUG SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP55N04SUG is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE NP55N04SUG TO-252 MP-3ZK

SS*2n60b

Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

ut3055

Abstract: diode BA 158 mosfet BA 95 S
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT3055 Power MOSFET 12A, 25V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UT3055 is N-Channel logic level enhancement mode field effect transistor. „ SYMBOL 2.Drain 1 TO-251 1.Gate 3.Source „ ORDERING INFORMATION

SSD5030N

Abstract: AIDM-110 South Sea Semiconductor
Contextual Info: SSD5030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 50A TO-252 RDS(ON) (mΩ) Max D 9.5 @VGS = 10V G 19.5 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package. Pb free. S o

Contextual Info: c p = G e n e r a l v S e m ic o n d u c t o r GFD30N03 N-Channel Enhancement-Mode MOSFET V d s 30V R ds <ON) 15rnQ I d 43A TO-252 DPAK) 0.170 (4.32) min. Dimensions in inches and (millimeters) (6.172) Mounting Pad Layout Mechanical Data Features Case: JEDEC TO-252 molded plastic body

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N10 Power MOSFET 6.5 Amps, 100 Volts N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC 6N10 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and minimum on-state resistance.

D17322

Abstract: 2SK3993 2SK3993-ZK 2SK399
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3993 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK3993 is N-channel MOS FET device that PART NUMBER PACKAGE 2SK3993 TO-251 MP-3 2SK3993-ZK TO-252 (MP-3ZK) features a low on-state resistance and excellent switching

diode ja

Contextual Info: SSD3030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 30A TO-252 RDS(ON) (mΩ) Max D 17 @VGS = 10V G 35 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable. G ◆ TO-252 package. ◆ Pb Free.

n-channel 500v sot 23 Power MOSFET

Abstract: TSM4ND50CP N-Channel mosfet 400v to220 N-CHANNEL POWER MOSFET SOT-252 MOSFET 500V 15A MOSFET 400V TO-220 MOSFET 500V 3A N-channel 500V mosfet TSM4ND50CZ
Contextual Info: TSM4ND50 500V N-Channel Power MOSFET TO-220 TO-252 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.

D18008

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.

UF630L-TN3-R

Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF4N20 Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION TO-252 The UTC UF4N20 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF4N20Z Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET  1 DESCRIPTION TO-252 The UTC UF4N20Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching

NP36P06SLG

Abstract: D18008 MOSFET 2301
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06SLG SWITCHING P-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The NP36P06SLG is N-channel MOS Field Effect PART NUMBER PACKAGE NP36P06SLG TO-252 MP-3ZK Transistor designed for high current switching applications.

UF630L-TN3-R

Abstract: uf630 power mosfet UF630 UF630L-TA3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

apm4048d

Abstract: APM4048D. datasheet apm*4048D APM4048 APM4048DU4 MOSFET N-CH 200V 2l TRANSISTOR SMD MARKING CODE STD-020C DSA0042784
Contextual Info: APM4048DU4 Dual Enhancement Mode MOSFET N-and P-Channel Features • Pin Description N-Channel 40V/7.5A, RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V • P-Channel -40V/-6A, Top View of TO-252-4 RDS(ON)=37mΩ (typ.) @ VGS= -10V (3) D1