Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    U2N60 Search Results

    SF Impression Pixel

    U2N60 Price and Stock

    Select Manufacturer

    Alpha & Omega Semiconductor AOU2N60

    MOSFET N-CH 600V 2A TO251-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AOU2N60 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    TME AOU2N60 3,797 3
    • 1 -
    • 10 $0.40
    • 100 $0.32
    • 1000 $0.29
    • 10000 $0.28
    		Buy Now

    Alpha & Omega Semiconductor AOU2N60A

    MOSFET N-CH 600V 2A TO251-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AOU2N60A Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    onsemi FQU2N60TU

    MOSFET N-CH 600V 2A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQU2N60TU Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Rochester Electronics LLC FQU2N60TU

    MOSFET N-CH 600V 2A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQU2N60TU Tube 342
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.88
    • 10000 $0.88
    		Buy Now

    FLIP ELECTRONICS FQU2N60CTU

    MOSFET N-CH 600V 1.9A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FQU2N60CTU Tube 1,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.46
    		Buy Now
    Find more U2N60 price and stock on Findchips.com

    U2N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SSR -100 DD

    Abstract: 600V 2A MOSFET N-channel U2N60 B4112 0G40471
    Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS - 6 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V


    OCR Scan     		SSR/U2N60A b4112 0G40471 SSR -100 DD 600V 2A MOSFET N-channel U2N60 PDF

    U2N60

    Abstract: *c1251c
    Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 m A Max. @ VDS= 600V ■


    OCR Scan     		SSR/U2N60A U2N60 *c1251c PDF

    U2N60

    Contextual Info: WFD/U2N60 Wisdom Semiconductor N-Channel MOSFET Features RDS on (Max 5.0 Ω )@VGS=10V • Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		WFD/U2N60 30TYP U2N60 PDF

    U2N60

    Abstract: 30V 20A power p MOSFET
    Contextual Info: SFD/U2N60 SemiWell Semiconductor N-Channel MOSFET Features RDS on (Max 5.0 Ω )@VGS=10V • Gate Charge (Typical 9.5nC) Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C) ■ ■ ■ 2. Drain { Symbol


    Original     		SFD/U2N60 30TYP U2N60 30V 20A power p MOSFET PDF

    MOSFET SSR

    Abstract: U2N60
    Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jaA Max @ Lower R ^o *, : 3.892 Q (Typ.)


    OCR Scan     		SSR/U2N60A --p300nF MOSFET SSR U2N60 PDF

    U2N60

    Contextual Info: Advanced SSR/U2N60A Power MOSFET FEATURES BVDSS - 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 1-8 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 600V


    OCR Scan     		SSR/U2N60A \61tage U2N60 PDF

    U2N60

    Contextual Info: Advanced SSR/U2N60A P o w e r MOSFET FEATURES BV DSS = 600 V • R ugged G ate O xide T e ch n o lo g y ^ D S o n ■ Lo w e r Input C a pa citance lD ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting ■ Lo w e r Leakage C urrent :25 |a.A (M ax.) @ V DS = 600V


    OCR Scan     		SSR/U2N60A U2N60 PDF

    U2N60

    Contextual Info: SSR/U2N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.8 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 25 µA (Max.) @ VDS = 600V


    Original     		SSR/U2N60A U2N60 PDF

    D2N60

    Abstract: U2N60
    Contextual Info: PJD2N60 / U2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PJD2N60 PJU2N60 2002/95/EC O-252 O-251 O-252 O-251 MIL-STD-750 D2N60 U2N60 PDF

    EZ-34

    Abstract: IRFM120A U2N60
    Contextual Info: Device List D2 / I 2 IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A IRFW/I620A IRFW/I630A IRFW/I640A IRFW/I614A IRFW/I624A IRFW/I634A IRFW/I644A IRFW/I710A IRFW/I720A IRFW/I730A IRFW/I740A SSW/I1N50A


    OCR Scan     		IRFW/IZ14A IRFW/IZ24A IRFW/EZ34A IRFW/IZ44A IRFW/I510A ERFW/I520A IRFW/I530A FRFW/I540A IRFWfl550A IRFW/I610A EZ-34 IRFM120A U2N60 PDF

    U2N60

    Abstract: SSU2N60 SSU2N55 SSR2N60 250M SSR2N55
    Contextual Info: SSR2N60/55 U2N60/55 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • D-PAK Lower R ds ON Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		SSR2N60/55 SSU2N60/55 SSR2N60/U2N60 SSR2N55/U2N55 SSR2N60/55 SSR2N60 SSU2N60 SSR2N55 SSU2N55 U2N60 250M PDF