TO-252 NA Search Results

6680

Abstract: FZ9935
Contextual Info: TO-252 Tape and Reel Data D-PAK TO-252 Packaging Configuration: Figure 1.0 Packaging Description: TO-252 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU01N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-252 FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE Linearity : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)

CHM25N15LPAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CHM25N15LPAGP CURRENT 25 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small package. (TO-252)

CHM05N65PAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM05N65PAGP N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 650 Volts CURRENT 4 Ampere APPLICATION * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE * Small flat package. D-PAK(TO-252)

TRANSISTOR SMD CODE 15

Abstract: smd code transistor transistor smd npn ac smd transistor code 14 smd transistor 14 transistor smd w transistor smd wu SMD Transistor SA SMD TRANSISTOR 2SD669A
Contextual Info: SMD Power Transistor NPN 2SD669XD/2SD669AXD SMD Power Transistor (NPN) Features • Designed for general purpose power applications • Rugged and reliable • RoHS compliance D-PACK (TO-252) Mechanical Data Case: D-PACK(TO-252), Plastic Package Terminals:

100C

Contextual Info: SSD01L60 1A, 600V,RDS ON 12Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente Description TO-252 The SSD01L60 (TO-252) is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. Features

3543

Contextual Info: MJD31C Low voltage NPN power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

d1 marking code dpak transistor

Abstract: MJD32CT4
Contextual Info: MJD32C Low voltage PNP power transistor Datasheet − production data Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252

TD03B

Abstract: 80530 TO-252 TO252 MS101189
Contextual Info: Transistor Outline TO-252 3 Lead Molded TO-252 NS Package Number TD03B LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:

JESD97

Abstract: MJD31C MJD31CT4
Contextual Info: MJD31CT4 Low voltage NPN power transistor General features • Surface-mounting TO-252 power package in tape & reel ■ In compliance with the 2002/93/EC European Directive 3 Applications ■ 1 General purpose switching and amplifier transistor DPAK TO-252

JESD97

Abstract: MJD31C MJD32C MJD32CT4
Contextual Info: MJD32C Low voltage PNP power transistor Features • NPN type is MJD31C ■ Surface-mounting TO-252 power package in tape & reel Applications ■ 3 1 General purpose switching and amplifier Description DPAK TO-252 The device is manufactured in Planar technology

2SA1242

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251/252 Plastic-Encapsulate Transistors 2SA1242 TRANSISTOR PNP TO-251 TO-252-2L FEATURES z Strobe Flash Applications Medium Power Amplifier Applications z Excellent hFE linearity 123 1 123 1. BASE : hFE (1) = 100 to 320 (VCE = −2 V, IC = −0.5 A)

13473

Abstract: MJD31C MJD31CT4-A MJD32C
Contextual Info: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching

MJD32C

Abstract: Date Code Marking STMicroelectronics PACKAGE DPAK MJD31C MJD32CT4 MJD32C st
Contextual Info: MJD32C Low voltage PNP power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology

MJD31C

Abstract: MJD32C MJD32CT4
Contextual Info: MJD32C Low voltage PNP power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the NPN type MJD31C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology

MJD31C

Abstract: MJD32C MJD32CT4-A
Contextual Info: MJD32CT4-A Low voltage PNP power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application ■ DPAK TO-252 General purpose linear and switching

Contextual Info: SSD484 25A, 30V,RDS ON 15mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD484 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial

SSD408

Abstract: mosfet 30V 18A TO 252
Contextual Info: SSD408 18A, 30V,RDS ON 18mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product Description TO-252 The SSD408 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial

Date Code Marking STMicroelectronics PACKAGE DPAK

Abstract: MJD31C MJD31CT4 MJD32C
Contextual Info: MJD31C Low voltage NPN power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology

MJD31C

Abstract: MJD31CT4-A MJD32C Date Code Marking STMicroelectronics PACKAGE DPAK
Contextual Info: MJD31CT4-A Low voltage NPN power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C 3 1 Application ■ DPAK TO-252 General purpose linear and switching

MJD31C

Abstract: MJD31CT4 MJD32C
Contextual Info: MJD31C Low voltage NPN power transistor Features • ■ Surface-mounting TO-252 power package in tape and reel TAB Complementary to the PNP type MJD32C 3 Application ■ 1 General purpose linear and switching equipment DPAK TO-252 Description The device is manufactured in planar technology

MJD31C

Abstract: MJD32C MJD32CT4-A
Contextual Info: MJD32CT4-A Low voltage PNP power transistor Features • This device is qualified for automotive application TAB ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the NPN type MJD31C 3 1 Application ■ DPAK TO-252 General purpose linear and switching