TO-262-3 PACKAGE INFINEON Search Results

a7x transistor

Abstract: diode t25 4 F0
Contextual Info: 6N135 6N136 Infineon :hno I High-Speed TRIOS Optocoupler FEA TU R ES Isolation Test Voltage: 530 0 V RMS T T L C om patible H igh Bit R ates: 1.0 M bit/s H igh C om m o n -M o d e In terfe re n c e Im m unity B an dw idth 2 .0 M H z O p en -C o lle c to r O u tput

optimos battery protection reverse

Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
Contextual Info: 21/9/04 15.23 Página 2 Product Information 2004 INFINEON TECHNOLOGIES Automotive MOSFET Green and Robust Package I N O R D E R T O cope with the new RoHS Restricting the use of Hazardous Automotive MOSFET Substances and WEEE (Waste Electronic and Electrical Equipment) regulations the

086n10n

Abstract: 082N10N 083N10N 086N10 IPP086N10N3 IPD082N10N3 IPD082N10N3 G IPB083N10N3 G PG-TO220-3 d36 marking
Contextual Info: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)

045n10n

Abstract: D100 TO-220 045n1 042N10N 045N10 IPP045N10 IPB042N10N3 G IEC61249-2-21 PG-TO220-3 042N10
Contextual Info: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)

126N10N

Abstract: 123N10N IEC61249-2-21 IPI126N10N3 PG-TO220-3
Contextual Info: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ ID 58 A • Very low on-resistance R DS(on)

086N10N

Abstract: 086n10 082N10N 083N10N IPP086N10N3G,086N10N,IPP IPD082N10N3 G
Contextual Info: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)

086n10n

Abstract: IPD082N10N3 G
Contextual Info: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max (TO 252) 8.2 mW ID 80 A • Very low on-resistance R DS(on)

045n10n

Abstract: 042n10n D100 TO-220 IPI045N10N3 G 045N10 042N10 045n1 PG-TO220-3 IPP045N10N IPP045N10
Contextual Info: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS 3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 263) 4.2 mΩ ID 100 A • Very low on-resistance R DS(on)

086n10n

Abstract: 082N10N 083N10N IPD082N10N3 086N10 IEC61249-2-21 IPP086N10N3 PG-TO220-3 V6150 IPP086N10N3 G
Contextual Info: OptiMOS 3 Power-Transistor IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO 252) 8.2 mΩ ID 80 A • Very low on-resistance R DS(on)

126N10N

Abstract: 123N10N D46 diode 126n10 IPI126N10N3 IPP126N10N3 G JESD22 PG-TO220-3
Contextual Info: IPP126N10N3 G IPB123N10N3 G OptiMOSTM3 Power-Transistor IPI126N10N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max TO-263 12.3 mΩ 58 ID A • Very low on-resistance R DS(on)

4456-P

Contextual Info: In fineon ♦s*î hno!09 CGB 91 GaAs MMIC Target Data Sheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit • Power down control • CMOS- switchable high/low-power mode

opto 721

Abstract: 690B 690ABT 690BT SFH690A SFH690ABT SFH690AT SFH690BT Optocoupler 721
Contextual Info: SFH690AT/690BT/690ABT Phototransistor Optocoupler Miniflat SOP Package FFEATURES • Current Transfer Ratios – SFH690AT, 50%–150% – SFH690BT, 100%–300% – SFH690ABT, 50%–300% • SOP Small Outline Package • Isolation Test Voltage, 3750 VRMS (1.0 s)

DDR200

Abstract: DDR266 DDR333 DDR400 WED3EG7232S-JD3 256mb ddr333 200 pin T26Z
Contextual Info: WED3EG7232S-JD3 PRELIMINARY 256MB – 32Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The WED3EG7232S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of nine 32Mx8 DDR

Contextual Info: WED3EG7232S-JD3 White Electronic PRELIMINARY 256MB – 32Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The WED3EG7232S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of nine 32Mx8 DDR

BSP317P

Abstract: VPS05163 Q67042-S4167
Contextual Info: BSP 317 P Preliminary data SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A SOT-223 Drain pin 2/4 4 Gate pin1 3 Source pin 3 Type Package BSP 317 P SOT-223

10V11

Abstract: 317P1 BSP317
Contextual Info: BSP 317 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A PG-SOT-223 Drain pin 2/4 4 Gate pin1 3 Source pin 3 Type Package BSP 317 P PG-SOT-223

317P1

Abstract: 043a
Contextual Info: BSP 317 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A SOT-223 Drain pin 2/4 4 Gate pin1 3 Source pin 3 Type Package BSP 317 P SOT-223 Ordering Code

K 317

Abstract: MARKING QG 6 PIN p-channel 200V smd diode 39a VPS05163 BSP317P E6327 L6327 317P1 317 6 pin information
Contextual Info: BSP 317 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A PG-SOT-223 Drain pin 2/4 4 Gate pin1 3 Source pin 3 Type Package BSP 317 P P-SOT-223

08CNE8N

Abstract: IPP08CNE8N JESD22 PG-TO220-3 D475A C3175
Contextual Info: IPB08CNE8N G IPI08CNE8N G OptiMOS 2 Power-Transistor IPP08CNE8N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on) • 175 °C operating temperature

08cn10n

Abstract: IPB08CN10N G IPP08CN10N to262 pcb footprint PG-TO220-3 JESD22
Contextual Info: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)

08CN10N

Contextual Info: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO263) 8.2 m: ID 95 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature

08cn10n

Abstract: IPP08CN10N JESD22 PG-TO220-3
Contextual Info: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)

08CN10N

Contextual Info: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)

08CN10N

Abstract: IPP08CN10N JESD22 PG-TO220-3 08CN10 08cn
Contextual Info: IPB08CN10N G IPI08CN10N G OptiMOS 2 Power-Transistor IPP08CN10N G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 8.2 mΩ ID 95 A • Very low on-resistance R DS(on)