TO128 PACKAGE Search Results

lcd driver

Abstract: NJU6437 NJU6438 160-Segment Philips cog lcd cog
Contextual Info: Segment Drivers Segment Driver 33 1/4 Duty LCD Driver 1/4 Duty I2C-Bus LCD Driver NJU6437 NJU6438 DATA SHEET DATA SHEET • GENERAL DESCRIPTION ■ GENERAL DESCRIPTION The NJU6437 is a 1/4 duty LCD driver for segment type LCD panel. The LCD driver consists of 4-common and 32-segment drivers up to128-segment totally.

TO-129

Abstract: 2N4933 TO128 PACKAGE 2N5687 TO-128
Contextual Info: Typ type f MHz Vcc P¡n Pout 2N 3137 T 2N 3309 2N 3375 250 50 250 400 20 50 25 28 0,1 2 0,4 1 0,4 15 2 3 2N 2N 2N 2N 3553 3632 3733 3866 175 175 400 400 28 28 28 28 0,25 3,5 4,0 0,1 2N 2N 2N 2N 3924 3926 3927 4040 175 175 175 400 13,6 13,6 13,6 28 2N 2N 2N

TO128 PACKAGE

Abstract: la 4127 t 3866 power transistor LA 4440 IC 2n4127 2n5102 2N4040 2N4041 2N5711 2n4428
Contextual Info: 2N5708 SIL IC O N NPN VH F POWER T R A N S IST O R mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 70 V

BD NPN transistors

Abstract: BD 139 140 BD - 100 V BD139-6 BD139 bd 139 package BD244 BD249 BDX15 Tc Bd 139
Contextual Info: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160

2N6197

Abstract: rf power transistors 2N3924 2N2876 2N4127 2N4073 2N6198 2N5698 MT 59 2N5687
Contextual Info: 61 RF POWER TRANSISTORS TYPE NUM BER O P E R A T IN G FR EQ U EN CY MHz MIN. POWER O U TPU T (W ATTS) MIN. POW ER G A IN (dB) 30-80 MHz RF POWER TRANSISTORS V CC (V O LT S) PACKAGE TYPE 2N5687 2N5847 2N5689 50 50 50 1.5 8 10 12 10 10 12.5 12.5 12.5 TO-39

bd 3055

Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
Contextual Info: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160

Contextual Info: X * EX4R XR-T56189 T1/CEPT High Speed Jitter Attenuator G E N E R A L DESCRIPTION PIN ASSIGNM ENT The function of the XR-T56189 is to attenuate the incomming jitter of clock and data. To do this, two buffers of 128 bits depth and a crystal oscillating at the receiver clock frequency are needed.

2N5070

Abstract: LA 4440 IC t 3866 power transistor 32-NF-2A-Thread LA 4127 2N3927 to60 2N5026 TO128 PACKAGE c 3866 transistor
Contextual Info: 2N5070 SIL IC O N NPN V H F POWER T R A N S IST O R Emitter Internally Grounded to Case Intermodulation Distortion Better than 30 dB at 25 W P.E.P Emitter Resistor Stabilised mechanical specification absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e . 65 V

2N3632

Abstract: LA 4127 LA 4440 IC transistor d 5702 e d 5703 2N5102 Effio ic 4440 2N4431 136 2n 2N3927
Contextual Info: 2N3632 SILICO N NPN VHF POWER TRANSISTO R Distributed Wafer Interdigitai Construction Integrated Diffused Emitter Ballast mechanical data Pins 1,15 " 10/32-NF-2AThread All dimensions are in mm TO-60 * absolute maximum ratings Tease - 25 °C Collector-Base V o lt a g e .

TO128 PACKAGE

Abstract: xr-t56189
Contextual Info: EX4R XR-T56189 T1/CEPT High Speed Jitter Attenuator PIN ASSIGNMENT GENERAL DESCRIPTION 2 The function of the XR-T56189 is to attenuate the incomming jitter of clock and data. To do this, two buffers of 128 bits depth and a crystal oscillating at the receiver clock frequency are needed.

LA 4440 IC

Abstract: LA 4127 IC LA 4127 2N5109 ic la 4440 t 3866 power transistor 2N3927 2N5687 2n5090 2N3375
Contextual Info: 2N5109 SIL IC O N NPN VH F POWER T R A N SIST O R • • • • • Ideal for C A T V Applications Minimum Gain-Bandwidth Product 1.2 GHz 11 dB at 200 MHz Low Distortion Low Noise mechanical data Collector-Base V o lt a g e . 40 V

t 3866 power transistor

Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
Contextual Info: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -

2N3375

Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690
Contextual Info: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted

t 3866 power transistor

Abstract: transistor 3866 s transistor d 5702 e d 5703 transistor t 3866 t 3866 transistor 2N3866 3866 transistor transistor 3866 2N3866 RF output Design 5698 transistor
Contextual Info: 2N3866 SIL IC O N NPN V H F POWER T R A N S IST O R V H F /U H F M E D IU M POW ER A M P L IF IE R • • 1 W at 400 MHz with 10 dB Gain Distributed Construction mechanical specification All d im e n s io n s a re in rnm TO-39 absolute maximum ratings Tease = 25 °C

DMS-1u

Abstract: 100-Pair 8x25 50-PIN bifurcated DMS-100 A0355744 130-A4128W011 130-A4128L011 DMS-100 temperature 50PIN
Contextual Info: Features • Maximum configuration: 128 pairs 8 x 32 ■ Hinged front cover to safeguard personnel and cross-connections ■ Rotates 180 ° and locks into place for convenient front access to equipment terminations ■ Bifurcated quick-clip insulation displacement

transistor BD 246

Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
Contextual Info: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A

transistor BD 246

Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
Contextual Info: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A

M41T256Y

Abstract: squarewave generator generator 1 hz NVRAM Digital alarm clock ic with 28 pin rtc with internal backup battery M41ST84 M41ST95 M41T00S M41T56
Contextual Info: Serial real-time clocks Accurate timekeeping and ultralow power in compact packages February 2006 www.st.co m/rtc STMicroelectronics real-time clock spectrum • High Integration RTCs ■ ■ Industry Standard RTCs ■ M41T6x Series ■ ■ Low standby current

BD139

Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
Contextual Info: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data

BD 139 transistor

Abstract: BD 140 transistor bd 3055 transistor BD 140 transistor bd 242 BD139-6 TRANSISTOR Bd 137 transistor BD 249 transistor BD 139 BD140
Contextual Info: BD140 PNP E P IT A X IA L - P L A N A R - S IL IC O N - T R A N S IS T O R • • • • • • • Driver for Audio Amplifier Active Convergenz Regulators Power Switching Ptot = 6.5 W at T q * 60 °C hpE > 40 at lc = 150 mA VcE sat < 0-5 V at lc = 0.5 A

transistor bd 139

Abstract: transistor BD 140 transistor bd 242 transistor bd 138 BD139 transistor BD 240 transistor BD 246 BD 139 140 TRANSISTOR BD 137 transistor BD245
Contextual Info: BD138 PNP E P IT A X IA L P L A N A R S IL IC O N TR A N S IS TO R 1 1 7 1 D ESIGN ED FO R CO M PLEM EN TARY USE WITH BD137

SOT423

Abstract: STI665 2S0869 TO247 package PT9795 OTS403 2S01397 trw rf
Contextual Info: POWER SILICON NPN Item Number Part Number I C 10 - ~t~g~ 15 20 SOT403 SOT403 STS409 OTS3705B OTS423 OTS663 IR663 SOT423 ~';'~:i3 25 30 SPC423M SPC425 STS423 2SC1875 2SC1170 2SC1893 2SC1170B 2SC1170B gt~~~ 35 40 OTS665 IR665 PTC424 PTC424P (A) PTC425 PTC425P (A)

transistor BD 246

Abstract: transistor BD 240 B0239 mj 3055 npn BD239 TEXAS INSTRUMENTS BDX 625 transistor mj 3055 transistor bd 242 operation of BD 139 transistor bd 138
Contextual Info: BD239, BD239A, BD239B, BD239C FOR POWER AM PLIFIER AN D HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD240A-C 30 W at 25 °C Case Temperature 2 A Rated Collector Current M in f T o f 3 MHz at 10 V , 200 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted

BDX 241

Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Contextual Info: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A