TO206 Search Results

vcr7n

Abstract: J270 jfets SST271
Contextual Info: Temic Semiconductors SOT23 T092 2 lead T092 (3 lead) JFETs - N-Channel Voltage-Controlled Resistors Breakdown VQIUlgg Ä f rr-" >;•; )(V) v Min Max Min Max Max ipA) Package VCR2N 20 60 -3.5 -7 -5000 TO206AA VCR4N 200 600 -3.5 -7 -200 T0206AA VCR7N 4000

2N2484UA

Abstract: 2N2484 2N2484UB 50VDC 2N2484UBC
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 DEVICES LEVELS 2N2484UA 2N2484UB 2N2484UBC * JAN

IS2-1009RH-Q

Abstract: 5962F0052301VYC IS2-1009RH-8 5962F0052301QXC 5962F0052301VXC IS-1009RH ISYE-1009RH-8 ISYE-1009RH-Q TO-206AB SMD TRANSISTOR FL
Contextual Info: IS-1009RH TM Data Sheet Radiation Hardened 2.5V Reference TM The Star*Power Radiation Hardened IS-1009RH is a 2.5V shunt regulator diode designed to provide a stable 2.5V reference over a wide current range. The device is exceptionally stable over a wide current range

2N5114

Abstract: 2N5116 2N5115
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com P-CHANNEL J-FET Equivalent To MIL-PRF-19500/476 DEVICES LEVELS 2N5114 2N5115 2N5116 MQ = JAN Equivalent MX = JANTX Equivalent

2N2907A

Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB

d2020e

Contextual Info: SILICONIX INC 18E I Ô5S473S 0014053 fy S iG c o n ix JLm in c o rp o ra te d ND2020 SERIES "T-2.7-7. S N-Channel Depletion-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER 1 • V BR)DSV fDS(ON) (V) (« ) Id (A)

2N4856

Contextual Info: T em ic 2N4856 JAN/JANTX/JANTXV Series siliconix N-Channel JFETs 2N4856JAN 2N4857JAN 2N4858JAN 2N4859JAN 2N4860JAN 2N4861JAN 2N4856JANTX 2N4857JANTX 2N4858JANTX 2N4859JANTX 2N4860JANTX 2N4861JANTX 2N4856JANTXV 2N4857JANTXV 2N4858JANTXV 2N4859JANTXV 2N4860JANTXV

SD5000N

Abstract: SD5001 sd5001 siliconix SD5001N sd5400 aros SD5400CY SD5000 SILICONIX SD5000
Contextual Info: T e m ic SD5000/5400 Series Siliconix N-Channel Lateral DMOS FETs SD5000I SD5400CY SD5000N SD5401CY SD5001N Product Summary Part Number v BR Ds Min (V) VGS(th) Max (V) SD5000I 20 1.5 SD5000N 20 1.5 SD5001N 10 1.5 SD5400CY 20 1.5 SD5401CY 10 1.5 For applications information see AN301, page 12-33.

Contextual Info: TE LEDYNE COMPONENTS EäE a w b a e D o üü ía4 3 â m g T-31-25 SD2204 SEMICONDUCTOR P-CHANNEL ENHANCEMENT MODE D-MOS FET ORDERING INFORMATION Sorted Chips in Conductive Waffle Pack TO-220AA TO-92 Plastic Package Description SD2204CHP SD2204BD -400V, 7000

to 206af

Abstract: to-206af sd210 206af SD214 rings To206AF
Contextual Info: 3bE D TELEDYNE COMPONENTS ÔIlTbQS 00077^0 S BITSC 'T-lÇ-lÇ WTELEDYNE COMPONENTS SD210 SD211 SD212 SD213 SD214 SD215 N-CHANNEL ENHANCEMENT-MODE DMOS FET SWITCHES FEATURES ABSOLUTE MAXIMUM RATINGS • ■ ■ V ds High Input to Output Isolation—120dB typical

741J

Contextual Info: Temic J/SST/U308 Series S e m i c o n d u c t o r s N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number V G S ioff V ) J3 0 8 - I t o - 6 .5 V (B R )G S S M in (V ) g ft Min (mS) -2 5 8 Id ss M in (m A ) 12 J309 —1 t o —4

marking code vishay SILICONIX to-236

Abstract: marking code vishay SILICONIX to-72 vishay siliconix code marking to-92
Contextual Info: PAD/JPAD/SSTPAD Series Vishay Siliconix Low-Leakage Pico-Amp Diodes PAD1 PAD5 PAD50 JPAD5 SSTPAD5 JPAD50 SSTPAD100 PRODUCT SUMMARY lR Max pA PAD1 -1 PAD5/JPAD5/SSTPAD5 -5 PAD5Q/JPAD50 -50 SSTPAD100 -100 FEATURES BENEFITS APPLICATIONS • Ultralow Leakage: PAD1 <1 pA

SFs SOT23

Contextual Info: 2 AE D • aTl?bUa QaQb4bM 1 H TELEDYNE CO M PO NENTS - T - 3 5 ~ - 2 S - TZ404 SEMICONDUCTOR _ N-CHANNEL ENHANCEMENT-MODE D-MOS FET ULTRA HIGH-SPEED LOW-COST SWITCH ORDERING INFORMATION TO-92 Pfaatic Package

SD306DE

Abstract: SD306 lm 2435 t SD304DE TELEDYNE 1413 0007AD
Contextual Info: TELEDYNE COMPONENTS 3bE D • fi^l?bOa 0007AD2 □ « T S C WTELEDYNE COMPONENTS SD304 SD306 N-CHANNEL ENHANCEMENT-MODE DUAL GATE DMOS FET FEATURES ABSOLUTE MAXIMUM RATINGS ■ ■ ■ ■ ■ ■ ■ Normally Off-Enhancement-Mode Operation Dual Gate with Gate Protective Diodes

digital controlled attenuator

Abstract: d82 sot-23 Teledyne Semiconductor CDG4460 DB3 5T
Contextual Info: 2flE » • awboa Doot-3is h m TELEDYNE COMPONENTS CDG4460 SEMICONDUCTOR 6-BIT VIDEO FREQUENCY DIGITAL CONTROLLED ATTENUATOR ORDERING INFORMATION 16-Pln Ceram ic Package | CPG4460J FEATURES APPLICATIONS ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Data Latch

CHIP SM 4108

Abstract: SM 4108 sm 4109 un 5111 IC
Contextual Info: TELEDYNE COMPONENTS 2flE D m öWbQE 0Ü0L.3Q7 7 M CDG2214 S E M IC O N D U C T O R HIGH SPEED ANALOG SWITCH ORDERING INFORMATION 8-Pin Ceramic Dip Package 13 :• — ■- 8-Pin Plastic Dip (Package 8) One SPST Switch Industrial Temperature Range C0G2214BJ

VP0610, sot23

Abstract: marking HSs SOT23 TO206AC VP0610T
Contextual Info: SILICONIX INC läE D C X Silico n ix X V • Ö25473S 0014110 □ VP0610 SERIES in c o rp o r a te d P-Channel Enhancement-Mode MOS Transistors T Z I-Z S PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) (Í1 ) (V) VP0610E -6 0 10 TO-92 ■o (A) PACKAGE -0.25

SST201

Abstract: j204 siliconix
Contextual Info: T em ic J/SST201 Series S e m i c o n d u c t o r s N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 Product Summary lo ss P a rt N um ber V c s io ff V ) V(BR)GSS M i n (V ) gfs M i n ( m S ) J/SST201 -0 .3 t o -1 .5 -4 0 0.5 0.2 J/SST202 -0 .8 to - 4

2N4416

Abstract: SST4416
Contextual Info: Tem ic 2N4416/2N4416A/SST4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 SST4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits

JFET J105

Contextual Info: Tem ic Sillconix _ J105/106/107 N-Channel JFETs Product Summary P a rt N um ber v GS<off Y) rnscon) M ax ( ß ) J105 -4 .5 to - 1 0 3 10 14 J106 - 2 to - 6 6 10 14 J107 -0 .5 to -4 .5 8 10 14 toN iy p (ns) iD(off) ty P (PA) Features

Contextual Info: TELEDYNE COMPONENTS 5ñE D • aW bOH . QOat.4aM O T-29 -25 SD1202 SEMICONDUCTOR_ N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-MOS FETs ORDERING INFORMATION Sorted Chips In Waffle Pack TO-226AA TO-92 Package

s t u 309d

Abstract: AMI Semiconductor socket 771 C451 4308B TLC 771
Contextual Info: SÖE D T EL ED Y N E COMPONENTS m Ö T 1 7 tü £ ÜQGb 3 Q I b CDG308, CDG309 CDG4308, CDG4309 SE M IC O N D U C T O R QUAD MONOLITHIC SPST CMOS/D-MOS ANALOG SWITCHES ORDERING INFORMATION s o -« S u ite * Mount Pacfcìa* O rw * b tlc tt mrtrc , Gomm ^W Tefnp.FÄng«

ss 7941

Contextual Info: EÒE TELEDYNE COMPONENTS D a ii7 b a a — OGOb4Qc] 4 • r T-29-25 SD1106 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION SD1106CHP SD1106DD SD1106AD Sorted Chips In Waffte Pack TO-2Q6AA TO-18 Package TO-237 Packaae ' FEATURES

SD215DE-2

Abstract: SD215DE vishay
Contextual Info: SD211DE-2/213DE-2/215DE-2 Vishay Siliconix N-Channel Lateral DMOS FETs Available Only In Extended Hi-Rel Flow PRODUCT SUMM ARY Part Number V(BH)DS M in (V) v GS(th) Max (V) rDS(on) Max (Q ) Crss Max (pF) SD211DE-2 30 1.5 4 5 V GS= 1 0 V 0.5 2 SD213DE-2