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    motorola g18

    Abstract: 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S
    Text: MOTOROU o Orderthls document by 2N3019SJANID SEMICONDUCTOR TECHNICAL DATA ttl ,$$>. *t~i”*J,:~$< >,. j/ ,>, ,.!$: .> ~>‘ 1111~ ~~~ ‘‘}1lb “,., 2N3019SJAN, dTX, dTXV, dANS 2N3700dAN, JTX, JTXV, JANS I\o Processed per MlL4-19500/391 NPN Silicon Small+ignal


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    PDF 2N3019SJANID 2N3019SJAN, 2N3700dAN, MlL4-19500/391 2N3019S T0205AD 1PHX24101 motorola g18 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S

    2n706 transistor

    Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l


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    PDF T0206AA 2N706 2N708 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA 2N2222 2n706 transistor transistor 2n706 2N2222AA 2n2222 jan 03150 transistor transistor 2N2222

    TO-18 amps pnp transistor

    Abstract: BC107 BC108
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029


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    PDF T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 TO-18 amps pnp transistor BC107 BC108

    2n3013

    Abstract: 2n3700a
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v DEVICE TYPE V cEO Ic sus VOLTS (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 VCE min/max @ mA/V 1»FE @ V VcE(sat) @ V @ mA/mA C(P P fx (MHz) 40/120@10/l 0.25@10/1 5 300 0.05


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    PDF 2N2481 T0206AA 2N2484 2N2895 2N2896 2N2897 2N3013 2N3014 2N3302 2N3700A

    Untitled

    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS 2ÛE 1 EW 3t S J L ^ J ^ i ^ !• ö T l T h O S OOOLi41]i 2 _ ü S D 1 1 0 7 , SD 1117 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Conflcwratton Sorted Chip» In Waffle Pack T0206AA TQ-1ÔÏ Package


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    PDF OOOLi41 T0206AA O-205AF TQ-39J O-226AA 14-Pin SD1107DD SD1107HD SEmQ780 SD1107N

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    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302


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    PDF T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369

    2n706 transistor

    Abstract: transistor 2n706 2n2222 jan 2N706 2N706 JAN
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 ^C E O PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS @ IC/ ^ C E min/max @ mA/V hpE VcE(jat) @ It/Iß v@ mA/mA TO-18 T0206AA < i\ C<p P (MHz) ÌT 20@ 10/1 0.6@10/1 6 200 30-120@10/l 0.4@10/1 6 300


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    PDF T0206AA 2N706 2N708 2N718 2N718AA 2N720A 2N930A 2N2221 2N2221AA 2N2222 2n706 transistor transistor 2n706 2n2222 jan 2N706 JAN

    vcr7n

    Abstract: J270 jfets SST271
    Text: Temic Semiconductors SOT23 T092 2 lead T092 (3 lead) JFETs - N-Channel Voltage-Controlled Resistors Breakdown VQIUlgg Ä f rr-" >;•; )(V) v Min Max Min Max Max ipA) Package VCR2N 20 60 -3.5 -7 -5000 TO206AA VCR4N 200 600 -3.5 -7 -200 T0206AA VCR7N 4000


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    PDF O206AA T0206AA T0206AF T0220AA 2N5460 2N5461 2N5462 vcr7n J270 jfets SST271

    2N4027

    Abstract: TO-18 amps pnp transistor 2N2907aA transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 2N2907
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 TO-18 T0206AA 1*FE @ IC/ ^ C E min/max @ mA/V sus VOLTS Ic (max) AMPS 2N2906 40 0.6 40/120@150/10 2N2906AA 60 0.6 2N2907 40 2N2907AA V ceo PACKAGE DEVICE TYPE V cE (M t) @ I c/I b V @ m A/m A C<P


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    PDF 2N2906 T0206AA 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N4027 TO-18 amps pnp transistor transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108

    2n3700a

    Abstract: 2n3946 npn transistor 2N3947 2n4013 2N2897 2N3302 2N2484 JANTX 2N3013 JANTX ST 2N4014 2N2481
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v n «. sus VOLTS lc (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 DEVICE TYPE VcEO hfE @ Ic/ VcE min/max @ mA/V VcE(sat) @ Ic^B V @ m A/mA C9P p fr (MHz) 40/120@10/l 0.25@10/1


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    PDF 2N2481 2N2484 T0206AA 2N2895 2N2896 2N2897 2N3013 2N3014 2N3302 2N3700A 2n3946 npn transistor 2N3947 2n4013 2N2484 JANTX 2N3013 JANTX ST 2N4014

    2N3799

    Abstract: No abstract text available
    Text: 2N3799* MAXIM UM RATINGS Characteristic Symbol Max Unit C o lle c to r -E m itte r V o lta g e VCEO -6 0 V dc C o lle c to r-B a s e V o lta g e VCBO -6 0 Vdc E m itte r-B a s e V o lta g e vebo -5 .0 V dc 'c -5 0 m Adc = 25X PD 0.36 2.06 W a tt m W X T o ta l D e vice D is s ip a tio n :<t T q = 2 5'C


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    PDF 2N3799* T0-206AA) 2N3799 2N3799

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR EPITAXIAL TRANSISTOR j ^ electronics ' ' umu* BCW34 • Silicon Planer Epitaxial NPN Transistor • Herm etic T 0 1 8 M etal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS 0 a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage


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    PDF BCW34 150mA T0-206AA)

    bcw34

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR EPITAXIAL TRANSISTOR j ^ electronics ' ' umu* BCW34 • Silicon Planer Epitaxial NPN Transistor • Herm etic T 0 1 8 M etal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS 0 a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage


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    PDF BCW34 150mA T0-206AA) bcw34

    SST5484

    Abstract: No abstract text available
    Text: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0


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    PDF T0220 T0237 T0220AA PN4117A PN4118A PN4119A 2N4416A 2N4117A 2N4118A 2N4119A SST5484

    BSS71 MOTOROLA

    Abstract: BSS71
    Text: MOTOROLA Order this document by BSS71/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BSS71 COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 200 Vdc Collector-Base Voltage v CBO 200 Vdc Em itter-Base Voltage


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    PDF BSS71/D BSS71 BSS71 MOTOROLA BSS71

    2N4338

    Abstract: 2N4340 equivalent IC 4340 ha 4341 BF* N-Channel
    Text: Tem ic siiiconix_ 2N4338/4339/4340/4341 N-Channel JFETs Product Summary Part Number VGS ofl (V) V(BR)GSS Min (V) gfs Min (mS) loss Max (mA) 0.6 2N4338 -0 .3 to - 1 -5 0 0.6 2N4339 -0 .6 to -1 .8 -5 0 0.8 1.5 2N4340 —1 to - 3 -5 0 1.3 3.6


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    PDF 2N4338/4339/4340/4341 2N4338 2N4339 2N4340 2N4341 AN106, P-37408--Rev. 2N4340 equivalent IC 4340 ha 4341 BF* N-Channel

    Untitled

    Abstract: No abstract text available
    Text: T e m ic sMiconix_ 2N5114/5115/5116 P-Channel JFETs Product Summary Part Number 2N5114 2N5115 2N5116 Vg S oB (V) 5 to 10 3 to 6 1 to 4 Max (Q> 75 100 150 r DS(<m> toN Max (ns) 16 30 42 Id (oB) Typ (pA) -1 0 -10 -10 2N5116, For applications information see AN104, page 12-21.


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    PDF 2N5114/5115/5116 2N5114 2N5115 2N5116 2N5116, AN104,

    TO-236 MARKING CODE C3

    Abstract: J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix
    Text: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number Vcs oft (V) J/SST111 J/SST112 -3 -1 J/SST113 r DS(on) Max (Q) lo(oft) Typ (pA) ton Typ (ns) to-10 to-5 30 5 4 50 5 4 < -3 100 5 4 FEATURES BENEFITS


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    PDF J/SST111 J/SST112 J/SST113 SST111 SST112 SST113 to-10 04-Jun-01 TO-236 MARKING CODE C3 J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix

    2n4338

    Abstract: 4339
    Text: 2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number v G S o ff ( V ) gf8 Min (mS) loss Max (mA) 2N4338 -0 .3 to —1 -5 0 0.6 0.6 2N4339 -0 .6 to -1 .8 -5 0 0.8 1.5 2N4340 -1 to - 3 -5 0 1.3 3.6 2N4341 -2 to -6 -5 0 2 9 V (B R )G S S


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    PDF 2N4338/4339/4340/4341 2N4338 2N4339 2N4340 2N4341 S-04028-- 04-Jun-01 4339

    SST113

    Abstract: No abstract text available
    Text: Tem ic J/SST111 Series S e m i c o n d u c t o r s N-Channel JFETs J ill SST111 J112 SST112 J113 SST113 Product Summary Part Number VGS off (V ) J /S S T lll J/S S T H 2 J/SST113 t o N T y p (n s ) r DS<on) M a x ( Q ) IlXofD T y p (p A ) - 3 t o -1 0 30


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    PDF J/SST111 SST111 SST112 SST113 J/SST113 14-Apr-97 J/SST112 J/SST113 S-52424--Rev.

    SD5400CY

    Abstract: No abstract text available
    Text: Temic S e m i c o n d u c t o r s # SOT23 40 <0^ T092 2 lead T092 (3 lead) T018 (2 lead) T018 (3 lead) DIP16 <0 S014 JFETs - P-Channel JFET Analog Switches Patt Number Breakdown Voltage Min (mA) VS T » Mis Max Min if*) Max 8h(mS> Typ 11 j 1 T yp typ Max


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    PDF DIP16 T0220AA P1087 SST174 SST175 SST176 SST177 SD210DE SD211DE SST211 SD5400CY

    DSE 130 -06A

    Abstract: DSE 130 -12A DSE 130 -10A SD1107CHP SD1107DD SD1107HD SD1117CHP SD1117DD SD1117HD SD1107BD
    Text: TO PAZ S E M I C O N D U C T O R 05E D | T ü ö S E E b D0Q1G34 b | SD 1107, SD Ì 117 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Configuration Sorted Chips- in Waffle Pack T0-206AA TO-18 Package TO-205AF (TO-39! Package TO-226AA (TO-92) Package


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    PDF 0D01034 SD1107. SD1107CHP SD1117CHP T0-206AA SD1107DD SD1117DD O-205AF SD1107HD SD1117HD DSE 130 -06A DSE 130 -12A DSE 130 -10A SD1107CHP SD1107DD SD1107HD SD1117CHP SD1117DD SD1117HD SD1107BD