motorola g18
Abstract: 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S
Text: MOTOROU o Orderthls document by 2N3019SJANID SEMICONDUCTOR TECHNICAL DATA ttl ,$$>. *t~i”*J,:~$< >,. j/ ,>, ,.!$: .> ~>‘ 1111~ ~~~ ‘‘}1lb “,., 2N3019SJAN, dTX, dTXV, dANS 2N3700dAN, JTX, JTXV, JANS I\o Processed per MlL4-19500/391 NPN Silicon Small+ignal
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2N3019SJANID
2N3019SJAN,
2N3700dAN,
MlL4-19500/391
2N3019S
T0205AD
1PHX24101
motorola g18
2N301
2N3700
Y14W
2N3019S
2N3019SJAN
2N3019S MOTOROLA
MERET
2N3700 MOTOROLA
motorola 2N3019S
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2n706 transistor
Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l
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OCR Scan
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T0206AA
2N706
2N708
2N718
2N718AA
2N720A
2N930A
2N2221
2N2221AA
2N2222
2n706 transistor
transistor 2n706
2N2222AA
2n2222 jan
03150 transistor
transistor 2N2222
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TO-18 amps pnp transistor
Abstract: BC107 BC108
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029
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T0206AA
2N2906
2N2906AA
2N2907
2N2907AA
2N3250AA
2N3251AA
2N3496
2N3497
2N3798
TO-18 amps pnp transistor
BC107
BC108
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2n3013
Abstract: 2n3700a
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v DEVICE TYPE V cEO Ic sus VOLTS (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 VCE min/max @ mA/V 1»FE @ V VcE(sat) @ V @ mA/mA C(P P fx (MHz) 40/120@10/l 0.25@10/1 5 300 0.05
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OCR Scan
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2N2481
T0206AA
2N2484
2N2895
2N2896
2N2897
2N3013
2N3014
2N3302
2N3700A
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Untitled
Abstract: No abstract text available
Text: TELEDYNE COMPONENTS 2ÛE 1 EW 3t S J L ^ J ^ i ^ !• ö T l T h O S OOOLi41]i 2 _ ü S D 1 1 0 7 , SD 1117 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Conflcwratton Sorted Chip» In Waffle Pack T0206AA TQ-1ÔÏ Package
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OCR Scan
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OOOLi41
T0206AA
O-205AF
TQ-39J
O-226AA
14-Pin
SD1107DD
SD1107HD
SEmQ780
SD1107N
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Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTO R T O -18 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS TO-18 T0206AA 2N706 2N718 2N930 2N2221 2N2221A 2N2222 2N2222A 2N2368 2N2369 2N2369A 2N3227 2N2432 2N2432A 2N2481 2N2484 2N2895 2N2896 2N2897 2N3302
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OCR Scan
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T0206AA
2N706
2N718
2N930
2N2221
2N2221A
2N2222
2N2222A
2N2368
2N2369
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2n706 transistor
Abstract: transistor 2n706 2n2222 jan 2N706 2N706 JAN
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 ^C E O PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS @ IC/ ^ C E min/max @ mA/V hpE VcE(jat) @ It/Iß v@ mA/mA TO-18 T0206AA < i\ C<p P (MHz) ÌT 20@ 10/1 0.6@10/1 6 200 30-120@10/l 0.4@10/1 6 300
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OCR Scan
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PDF
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T0206AA
2N706
2N708
2N718
2N718AA
2N720A
2N930A
2N2221
2N2221AA
2N2222
2n706 transistor
transistor 2n706
2n2222 jan
2N706 JAN
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vcr7n
Abstract: J270 jfets SST271
Text: Temic Semiconductors SOT23 T092 2 lead T092 (3 lead) JFETs - N-Channel Voltage-Controlled Resistors Breakdown VQIUlgg Ä f rr-" >;•; )(V) v Min Max Min Max Max ipA) Package VCR2N 20 60 -3.5 -7 -5000 TO206AA VCR4N 200 600 -3.5 -7 -200 T0206AA VCR7N 4000
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O206AA
T0206AA
T0206AF
T0220AA
2N5460
2N5461
2N5462
vcr7n
J270
jfets
SST271
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2N4027
Abstract: TO-18 amps pnp transistor 2N2907aA transistor BC109 IC 8002 2N4028 2n869a 2n3963 TRANSistor BC108 2N2907
Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 TO-18 T0206AA 1*FE @ IC/ ^ C E min/max @ mA/V sus VOLTS Ic (max) AMPS 2N2906 40 0.6 40/120@150/10 2N2906AA 60 0.6 2N2907 40 2N2907AA V ceo PACKAGE DEVICE TYPE V cE (M t) @ I c/I b V @ m A/m A C<P
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2N2906
T0206AA
2N2906AA
2N2907
2N2907AA
2N3250AA
2N3251AA
2N3496
2N3497
2N3798
2N4027
TO-18 amps pnp transistor
transistor BC109
IC 8002
2N4028
2n869a
2n3963
TRANSistor BC108
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2n3700a
Abstract: 2n3946 npn transistor 2N3947 2n4013 2N2897 2N3302 2N2484 JANTX 2N3013 JANTX ST 2N4014 2N2481
Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 PACKAGE TO-18 T0206AA v n «. sus VOLTS lc (max) AMPS 2N2481 15 0.05 2N2484 60 2N2895 DEVICE TYPE VcEO hfE @ Ic/ VcE min/max @ mA/V VcE(sat) @ Ic^B V @ m A/mA C9P p fr (MHz) 40/120@10/l 0.25@10/1
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OCR Scan
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2N2481
2N2484
T0206AA
2N2895
2N2896
2N2897
2N3013
2N3014
2N3302
2N3700A
2n3946 npn transistor
2N3947
2n4013
2N2484 JANTX
2N3013 JANTX
ST 2N4014
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2N3799
Abstract: No abstract text available
Text: 2N3799* MAXIM UM RATINGS Characteristic Symbol Max Unit C o lle c to r -E m itte r V o lta g e VCEO -6 0 V dc C o lle c to r-B a s e V o lta g e VCBO -6 0 Vdc E m itte r-B a s e V o lta g e vebo -5 .0 V dc 'c -5 0 m Adc = 25X PD 0.36 2.06 W a tt m W X T o ta l D e vice D is s ip a tio n :<t T q = 2 5'C
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2N3799*
T0-206AA)
2N3799
2N3799
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR EPITAXIAL TRANSISTOR j ^ electronics ' ' umu* BCW34 • Silicon Planer Epitaxial NPN Transistor • Herm etic T 0 1 8 M etal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS 0 a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage
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BCW34
150mA
T0-206AA)
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bcw34
Abstract: No abstract text available
Text: NPN SILICON PLANAR EPITAXIAL TRANSISTOR j ^ electronics ' ' umu* BCW34 • Silicon Planer Epitaxial NPN Transistor • Herm etic T 0 1 8 M etal Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS 0 a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage
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BCW34
150mA
T0-206AA)
bcw34
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SST5484
Abstract: No abstract text available
Text: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0
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T0220
T0237
T0220AA
PN4117A
PN4118A
PN4119A
2N4416A
2N4117A
2N4118A
2N4119A
SST5484
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BSS71 MOTOROLA
Abstract: BSS71
Text: MOTOROLA Order this document by BSS71/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors NPN Silicon BSS71 COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage v CEO 200 Vdc Collector-Base Voltage v CBO 200 Vdc Em itter-Base Voltage
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BSS71/D
BSS71
BSS71 MOTOROLA
BSS71
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2N4338
Abstract: 2N4340 equivalent IC 4340 ha 4341 BF* N-Channel
Text: Tem ic siiiconix_ 2N4338/4339/4340/4341 N-Channel JFETs Product Summary Part Number VGS ofl (V) V(BR)GSS Min (V) gfs Min (mS) loss Max (mA) 0.6 2N4338 -0 .3 to - 1 -5 0 0.6 2N4339 -0 .6 to -1 .8 -5 0 0.8 1.5 2N4340 —1 to - 3 -5 0 1.3 3.6
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2N4338/4339/4340/4341
2N4338
2N4339
2N4340
2N4341
AN106,
P-37408--Rev.
2N4340 equivalent
IC 4340
ha 4341
BF* N-Channel
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Untitled
Abstract: No abstract text available
Text: T e m ic sMiconix_ 2N5114/5115/5116 P-Channel JFETs Product Summary Part Number 2N5114 2N5115 2N5116 Vg S oB (V) 5 to 10 3 to 6 1 to 4 Max (Q> 75 100 150 r DS(<m> toN Max (ns) 16 30 42 Id (oB) Typ (pA) -1 0 -10 -10 2N5116, For applications information see AN104, page 12-21.
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2N5114/5115/5116
2N5114
2N5115
2N5116
2N5116,
AN104,
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TO-236 MARKING CODE C3
Abstract: J112 equivalent vishay siliconix code marking to-92 TO226AA J112 TO92 j112 siliconix
Text: J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number Vcs oft (V) J/SST111 J/SST112 -3 -1 J/SST113 r DS(on) Max (Q) lo(oft) Typ (pA) ton Typ (ns) to-10 to-5 30 5 4 50 5 4 < -3 100 5 4 FEATURES BENEFITS
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J/SST111
J/SST112
J/SST113
SST111
SST112
SST113
to-10
04-Jun-01
TO-236 MARKING CODE C3
J112 equivalent
vishay siliconix code marking to-92
TO226AA
J112 TO92
j112 siliconix
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2n4338
Abstract: 4339
Text: 2N4338/4339/4340/4341 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number v G S o ff ( V ) gf8 Min (mS) loss Max (mA) 2N4338 -0 .3 to —1 -5 0 0.6 0.6 2N4339 -0 .6 to -1 .8 -5 0 0.8 1.5 2N4340 -1 to - 3 -5 0 1.3 3.6 2N4341 -2 to -6 -5 0 2 9 V (B R )G S S
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2N4338/4339/4340/4341
2N4338
2N4339
2N4340
2N4341
S-04028--
04-Jun-01
4339
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SST113
Abstract: No abstract text available
Text: Tem ic J/SST111 Series S e m i c o n d u c t o r s N-Channel JFETs J ill SST111 J112 SST112 J113 SST113 Product Summary Part Number VGS off (V ) J /S S T lll J/S S T H 2 J/SST113 t o N T y p (n s ) r DS<on) M a x ( Q ) IlXofD T y p (p A ) - 3 t o -1 0 30
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J/SST111
SST111
SST112
SST113
J/SST113
14-Apr-97
J/SST112
J/SST113
S-52424--Rev.
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SD5400CY
Abstract: No abstract text available
Text: Temic S e m i c o n d u c t o r s # SOT23 40 <0^ T092 2 lead T092 (3 lead) T018 (2 lead) T018 (3 lead) DIP16 <0 S014 JFETs - P-Channel JFET Analog Switches Patt Number Breakdown Voltage Min (mA) VS T » Mis Max Min if*) Max 8h(mS> Typ 11 j 1 T yp typ Max
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DIP16
T0220AA
P1087
SST174
SST175
SST176
SST177
SD210DE
SD211DE
SST211
SD5400CY
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DSE 130 -06A
Abstract: DSE 130 -12A DSE 130 -10A SD1107CHP SD1107DD SD1107HD SD1117CHP SD1117DD SD1117HD SD1107BD
Text: TO PAZ S E M I C O N D U C T O R 05E D | T ü ö S E E b D0Q1G34 b | SD 1107, SD Ì 117 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Configuration Sorted Chips- in Waffle Pack T0-206AA TO-18 Package TO-205AF (TO-39! Package TO-226AA (TO-92) Package
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0D01034
SD1107.
SD1107CHP
SD1117CHP
T0-206AA
SD1107DD
SD1117DD
O-205AF
SD1107HD
SD1117HD
DSE 130 -06A
DSE 130 -12A
DSE 130 -10A
SD1107CHP
SD1107DD
SD1107HD
SD1117CHP
SD1117DD
SD1117HD
SD1107BD
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