TO220 AMPS 1200 V Search Results

1MBC15-060

Abstract: 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt
Contextual Info: DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 5 0 Amps Device Type V ces Pc lc Tc=25°C Tc=80°C Tc=100°C Volts Amps Amps Amps 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 600 600 600 600 13 15 5 10 1MB30-060 1MBH50-060 600 600 20 24 38 48 82 20 30 Vge = 15V

LT 220 diode

Contextual Info: DISCRETE IGBT 600 VO LT, D IS C R E T E IGBT • 5-50 Amps Device Vces !' Type Volts 60B 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 600 600 600 600 600 V g e =15V lc Cont. Pc Per&BT VcE sal Max. Amps 5 10 15 20 30 50 Watts Volts 3.0 3.0

BRX49 equivalent

Abstract: BRX49 BRX49 pinout 2n1771 data sheet 2N4172 2N1778 circuit G C106B1 2N3670 2n3668 C103B
Contextual Info: SCRs Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Amperes RMS 15 to 1200 Volts IT (AMPS) o 0.8 @ TC ( C) 55 55 55 55 60 ITSM (AMPS) 6.0 6.0 6.0 6.0 10 TO-92 CASE TO-18 TO-92 Pinout Pinout CGA AGC VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885

BRX49 SCR

Abstract: c106b1 scr scr c103b SCR C106D1 scr 2N5062 SCR Brx45 c103b SCR 2N5061 scr 2n3668 2N4170
Contextual Info: SCRS Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Am peres RMS 15 to 1200 Volts 0.8 IT (AMPS) @ T c (°C) ITSM(AMPS) 55 55 55 55 60 60 6.0 6.0 6.0 6.0 10 10 ; TO-18 CASE f TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001

SCR 2N1599

Abstract: SCR 2N1595 BRX49 SCR c106B1 scr scr c103b CS83-110N 2N4174 scr 2N3669 2N4172
Contextual Info: SCRS Silicon Controlled Rectifiers Metal/Plastic Packages 0.8 to 110 Am peres RMS 15 to 1200 Volts 0.8 IT (AMPS) @ TC (°C) •TSM (AMPS) 55 55 55 55 60 60 6.0 6.0 6.0 6.0 10 10 I TO-18 CASE I TO-92 TO-92-18R VRRM (VOLTS) 15 2N876 2N884 30 2N877 2N885 2N3001

APT100GF60LR

Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
Contextual Info: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of

z18a

Abstract: DIODE RECTIFIER press fit z30 LT 7210 Z41B ecg rectifier diode HR-29 ECG5994 ecg597 ECG5800 ecg599
Contextual Info: P H I L IP S E C G INC Industrial Rectifiers Peak Reverse Voltage P R V Volts 50 3A 50 200 Note: Standard polarity is cathode to case. * Indicates polarity is anode to case. 6A 15 A 16 A 20 A ECG5870 ECG5940 ECG5892 ECG5912 ECG5831* ECG5851* ECG5871* ECG5941*

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Contextual Info: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic

CLA60MT1200NHR

Abstract: triac design CLA30MT1200NPB CLA40MT1200NPB CMA60MT1600NHR
Contextual Info: N E W P R O D U C T B R I E F New High Performance DT-Triac Technology Platform HIGH VOLTAGE & CURRENT DT-TRIAC™ May 2014 Overview: IXYS Corporation NASDAQ: IXYS , a leader in power semiconductors and integrated circuits technologies for energy efficient products used in power conversion and motor control

600 volt mosfet

Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500
Contextual Info: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced “Miller Capacitance” - this provides for increased noise and spurious turn-on immunity and eliminates the

E81734

Abstract: bhk3012tv STTH6003CW STTA3006PI BHK3012 STTA512F BHA3012TV STTH3003CW 5 Amps Diode STTH20003TV1
Contextual Info: POWER RECTIFIERS TURBOSWITCHTM DIODES TO220AC ISOWATT220AC TO-220AB TO-220AC Ins. UL E81734 (N) ISOWATT220 AND TO220 TYPE TURBOSWITCH RECTIFIERS Voltage (max) 300 Volts * 600 Volts Current Part Number 8 Amps 2 x 10 Amps 5 Amps STTH803D STTH2003CT STTA506D

mj 1504 transistor equivalent

Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
Contextual Info: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as

lt 6246

Abstract: z18a ECG6013 ECG5802 ECG6158 ECG586 ECG5801 ECG5804 ECG5882 Diode Z20
Contextual Info: PH IL IP S E C G INC Industrial Rectifiers P eak Reverse Voltage P R V Volts 50 3A 50 100 ECG5801 200 ECG5802 400 ECG5804 ECG5806 600 800 ECG5808 800 1000 ECG5809 1000 IFM Surge Tc at Rated lo (DC) Max 6A 6 A /22 A 12 A 15 A 16 A 20 A ECG5830 ECG5850 ECG5870

catalog mosfet Transistor smd

Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
Contextual Info: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance

2N3670

Abstract: 2N4103 2N3668 2N688A CS220-16B 2N3669 2N681 2N682 2N683 2N684
Contextual Info: SCRs Continued It (AMPS) 16 25 @ T c (°C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 ( K ä & I - uUU CASE TO-3 TO-220 TO-48 f TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684,A* 2N3669 CS3-16B CS220-16B* 2N685.A* 250 2N686.A*

2N692

Contextual Info: SCRS Continued IT (AMPS) 16 25 @ TC (°C) 90 90 90 70 ITSM (AMPS) 200 200 160 200 (a & ä (K - » uuU CASE TO-48 TO-220 TO-3 90 f 250 £ n u U ¡J TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684.A* 2N3669 CS3-16B CS220-16B*

Contextual Info: Continued IT (AMPS) 16 25 @ TC (°C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 I % I U CASE TO-3 TO-220 A TO-48 TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683,A* 150 200 2N684,A* 2N3669 CS3-16B CS220-16B* 2N685.A* 250 2N686.A* 300 2N687,A*

2N3668

Contextual Info: SCRs Continued It (AMPS) 16 25 @ Tc (°C) 90 90 90 70 ITSM (AMPS) 200 200 160 200 (9 (K - ~ j ) ^ ä Ä IS u uu CASE TO-3 TO-220 TO-48 90 f 250 TO-220 VRRM (VOLTS) 25 2N681 ,A* 50 2N682,A* 100 2N3668 2N683.A* 150 200 2N684.A* 2N3669 CS3-16B CS220-16B* 2N685.A*

fast diode SOT-227

Abstract: N-channel MOSFET to-247 FREDFETs TO-264 TO247 APT17F120J TO-247 APT44F80L to264
Contextual Info: TM Power MOS 8 is a new family of high speed, high voltage N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These new MOSFETs /FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above

2N3670

Abstract: 2n4103 2N681 2N687 2N3668 2N3669 2N683 CS220-25D 2N684 2N682
Contextual Info: SCRs Continued IT (AMPS) 16 25 @ TC ( C) 90 90 90 70 90 ITSM (AMPS) 200 200 160 200 250 TO-220 TO-48 TO-220 o CASE TO-3 (50 mil leads) VRRM (VOLTS) 25 2N681,A 50 2N682,A 100 2N3668 2N683,A 150 200 2N684,A 2N3669 CS3-16B CS220-16B* 2N685,A 250 2N686,A 300

1200v 3A

Contextual Info: APT1204R7KLL 1200V 3A 4.70W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

APT1204R7KFLL

Abstract: apt1204r7 APT1204R7KF
Contextual Info: APT1204R7KFLL 1200V 3.5A 4.700Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain

APT1204R7KLL

Abstract: apt1204r7
Contextual Info: APT1204R7KLL 1200V 3.5A 4.70Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON