TO220AB Search Results

BTB04-600SAP

Abstract: S0817MH S1217NH BTA12-700BW BTB04 600SAP BTB04-600SAP equivalent BTB06-700SW btb04600sap s1217mh BTA06-400GP
Contextual Info: Thyristors 4-Quadrant Triacs - continued 4-Quadrant Triacs - continued Thyristors ST Microelectronics Cross Reference Guide Silicon Controlled Rectifiers SCRs - continued VDRM (V) IGT (mA) Package ST Part NXP Part 800 35/35/35/70 SOT78 / TO220AB Z0109NN

S12M15-600B

Contextual Info: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package

IRF820

Abstract: irf-82
Contextual Info: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()

BUJ105A

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ105A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

TRANSISTOR BUK9508

Abstract: BUK9508-55A BUK9608-55A transistor smd 412 BE
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

BUJ202A

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ202A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

GCF10A60

Contextual Info: FRD Type : GCF10A60 OUTLINE DRAWING FEATURES * Similar to TO220AB Case * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Approx Net Weight:1.9g

BUK95180-100A

Abstract: BUK96180-100A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

BUK9535-55A

Abstract: transistor smd 26 BUK953555A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which features

Contextual Info: FRD Type : GCF10A20 OUTLINE DRAWING FEATURES * Similar to TO220AB Case * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Approx Net Weight:1.9g

GCF10A40

Contextual Info: FRD Type : GCF10A40 OUTLINE DRAWING FEATURES * Similar to TO220AB Case * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Approx Net Weight:1.9g

PHE13009

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHE13009 Silicon Diffused Power Transistor Product specification March 1999 NXP Semiconductors Product specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for

GCF06A40

Contextual Info: FRD Type : GCF06A40 OUTLINE DRAWING FEATURES * Similar to TO220AB Case * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability * 200 Volts thru 600 Volts Types Available Maximum Ratings Approx Net Weight:1.9g

BUJ303B

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

SMBJ11CA

Abstract: SMBJ15A 13/Altium SBR10200CT SBL2035CT SBR30A50CT SMBJ130A SMBJ130CA SMBJ17A SMBJ14CA
Contextual Info: DATE: 11th March, 2011 PCN #: 2034 REV 01 on 4th August, 2011 PCN Title: Qualification of Additional Assembly and Test Site for Select SMA, SMB, SMC, and TO220AB Packaged Devices

AN7254

Abstract: AN7260 RFP2N12 RFP2N15 TB334
Contextual Info: [ /Title RFP2N 12, RFP2N1 5 /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark RFP2N12, RFP2N15 Semiconductor 2A, 120V and 150V, 1.750 Ohm,

Contextual Info: SCTMU001F Data Sheet N-channel SiC power MOSFET lOutline VDSS 400V RDS on (Typ.) 120mW ID 20A PD 132W TO220AB (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel

IRF54

Abstract: IRF540 RF1S540SM RF1S540SM9A Applications Note of IRF540 RF1S540 T1 IRF540 IRF540 application IRF540 MOSFET datasheet irf540 pdf switch
Contextual Info: [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB ) /Creator () /DOCI IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECOSheet SU

T0252

Abstract: SUP75NO8-I0 SUP60N06-18 D-PAK D2PAK SMP40P06 T0263 70220AB SMD10P05 T0-251
Contextual Info: Tem ic S e m i c o n d u c t o r s Power MOSFETs £ ' - ^ « ». J " V* , Tt i * ï ^ f I -4 .,iV " j V- .1 ,1 • r ÿ r / ï l / 'V • ; v i N-Channel Devices SMB60N03-10L 0.010 60 125 D2PAK T0263 SMP60N03-10L 0.010 60 105 TO220AB 0.03 30 50 DPAK (T0252)

IRF530 mosfet

Abstract: TA17411 IRF530 TB334 irf530g
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power

Contextual Info: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 600 VOLTS Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package

Contextual Info: LITE-ON SEMICONDUCTOR S12M15-B SERIES SCRs 12 AMPERES RMS 400 thru 800 VOLTS Sillicon Controlled Rectifiers Reverse Blocking Thyristors TO-220AB FEATURES B Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 80℃ Rugged, Economical TO220AB Package

BUT211

Abstract: BUT21
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTION Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited for high frequency electronic lighting ballast applications.