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    TO247 CASE Search Results

    TO247 CASE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    11n80c3

    Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80
    Contextual Info: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type SPW11N80C3 Package P-TO247


    Original     		SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11n80c3 Q67040-S4440 11n80c SPW11N80C3 80011a 11n80 PDF

    6r045a

    Abstract: IPW60R045CPA 6r045 mosfet 6r045A IPW60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PG-TO247
    Contextual Info: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.045 Ω 150 nC Features • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified


    Original     		IPW60R045CPA PG-TO247-3 6R045A PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 6r045a IPW60R045CPA 6r045 mosfet 6r045A IPW60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PG-TO247 PDF

    IPW50R045CP

    Abstract: JESD22
    Contextual Info: IPW50R045CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS,on in TO247 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS on ,max 0.045 Ω 150 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated PG-TO247 • High peak current capability


    Original     		IPW50R045CP PG-TO247 IPP50R045CP 5R045P IPW50R045CP JESD22 PDF

    sd 431 transistor

    Abstract: 6R045A 6r045 ED-44 diode
    Contextual Info: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.045 Ω 150 nC • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability


    Original     		IPW60R045CPA 6R045A PG-TO247-3 PG-TO247-3 IPW60PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 PG-TO247-3-41 PG-TO247-3-41 sd 431 transistor 6r045 ED-44 diode PDF

    F1S30P06

    Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334
    Contextual Info: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM


    Original     		RFG30 RFP30P RF1S30 P06SM) O220AB, O262AA, O263AB) RFG30P06, RFP30P06, F1S30P06 RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334 PDF

    Contextual Info: Super Fast Recovery Diode Data Sheet RFUH30TS6S lSerise lDimensions Unit : mm lStructure Standard Fast Recovery lApplication General rectification RFUH30 TS6S 1 lFeatures 2 1) Ultra low switching loss 2) High current overload capacity lConstruction ROHM : TO247


    Original     		RFUH30TS6S RFUH30 R1102A PDF

    diode 104

    Abstract: click 0819 SML5023BN
    Contextual Info: SEME SML5023BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC


    Original     		SML5023BN diode 104 click 0819 SML5023BN PDF

    B4015L

    Abstract: MBR4015LWT
    Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT r14525 MBR4015LWT/D B4015L MBR4015LWT PDF

    B4015L

    Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package Employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT MBR4015LWT/D B4015L PDF

    BFC45

    Contextual Info: SEME BFC45 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC45 BFC45 PDF

    sil 5102

    Abstract: IRFP150 TB334
    Contextual Info: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()


    Original     		IRFP150 sil 5102 IRFP150 TB334 PDF

    BFC50

    Abstract: BY 126 DIODE DYNAMIC RESISTANCE 1428-TR
    Contextual Info: SEME BFC50 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC50 BFC50 BY 126 DIODE DYNAMIC RESISTANCE 1428-TR PDF

    "VDSS 800V" mosfet

    Abstract: BFC46
    Contextual Info: SEME BFC46 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC46 "VDSS 800V" mosfet BFC46 PDF

    MBR4015

    Abstract: MBR4015LWT MBR4015LWTG
    Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT MBR4015LWT/D MBR4015 MBR4015LWT MBR4015LWTG PDF

    SML5020BN

    Abstract: W112A
    Contextual Info: SEME SML5020BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC


    Original     		SML5020BN 380mS SML5020BN W112A PDF

    BFC51

    Abstract: W64A
    Contextual Info: SEME BFC51 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC51 BFC51 W64A PDF

    BFC44

    Abstract: W52A
    Contextual Info: SEME BFC44 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC44 BFC44 W52A PDF

    MBR4015LWT

    Abstract: MBR4015LWTG
    Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT MBR4015LWT/D MBR4015LWT MBR4015LWTG PDF

    BFC42

    Contextual Info: SEME BFC42 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC42 BFC42 PDF

    Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT MBR4015LWT/D PDF

    Contextual Info: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance


    Original     		ICE47N60W 250uA 187nC O-247 0E-06 0E-05 0E-04 0E-03 0E-02 0E-01 PDF

    BFC48

    Contextual Info: SEME BFC48 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC48 BFC48 PDF

    BFC52

    Contextual Info: SEME BFC52 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69


    Original     		BFC52 BFC52 PDF

    Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low


    Original     		MBR4015LWT PDF