TO264 FOOTPRINT Search Results

smps 1000W

Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Contextual Info: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain

SIL-PAD density

Abstract: ASTM-A228 A228
Contextual Info: Ohmite introduces the M series, patented Pat. No. 7,151,669 , high performance, low cost, configurable, scalable and compact heat sink with matrix clip system for TO-247 and TO-264 packages. This powerful heat sink provides the easiest assembly, largest surface area and smallest footprint. It is the ideal type

300V dc dc boost converter

Abstract: 300V dc to dc boost converter PLUS-247 Uninterruptible power supply application sot-227 footprint TO264 footprint ZVS boost converter "Power MOSFETs" IXFK230N20T ups circuit
Contextual Info: POWER Efficiency Through Technology N E W P R O D U C T B R I E F GigaMOSTM Power MOSFETs “Best in class” energy efficiency for lower–voltage higher–current applications MAY 2009 OVERVIEW IXYS introduces a new product family of 170V to 300V GigaMOSTM Power MOSFETs. These

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

SIL-PAD to-247

Abstract: ASTM-A228 SIL-PAD 1000 TO 247 SIL-PAD density Tgon 800 A228 A366 MV102
Contextual Info: Ohmite introduces the M series, patented Pat. No. 7,151,669 , high performance, low cost, configurable, scalable and compact heat sink with matrix clip system for TO-247 and TO-264 packages. This powerful heat sink provides the easiest assembly, largest surface area and smallest footprint. It is the ideal type

VRF2933FL

Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Contextual Info: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system

Full-Bridge topology switching power supply

Abstract: hybrid car charger inverter sot-227 footprint dc link capacitor EV Battery IXFN520N075T2 ups circuit power mosfet for ev battery charger dc to dc full-bridge mosfet for dc to ac inverter
Contextual Info: POWER Efficiency Through Technology N E W P R O D U C T B R I E F GigaMOSTM TrenchT2TM Power MOSFETs Power MOSFET Solutions for low voltage, high current power conversion systems january 2010 OVERVIEW IXYS announces the portfolio expansion of its GigaMOSTM product family with new

52N30

Abstract: IXFH 52N30q 52N30Q TO264 footprint
Contextual Info: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V ID25 = 16 A RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings

Contextual Info: HiPerFETTM Power MOSFETs IXFH 52N30Q IXFK 52N30Q IXFT 52N30Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances VDSS ID25 = 300 V = 52 A = 60 mW £ 250 ns RDS on trr Preliminary data Symbol Test Conditions

80n15

Abstract: TO264 footprint
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 = 150 V = 80 A = 22.5 mW £ 200 ns RDS on trr Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS

80N20Q

Abstract: TO264 footprint
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS on trr = 200 V = 80 A = 28 mW £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR

DSA003681

Abstract: TO264 footprint
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N15Q IXFK 80N15Q IXFT 80N15Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 = 150 V = 80 A = 22.5 mW £ 200 ns RDS on trr Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS

60N25

Abstract: MAX2235
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q Q-Class VDSS ID25 = 250 V = 60 A = 47 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol

ixfh 26 n 49

Abstract: IRM80
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N20Q IXFK 80N20Q IXFT 80N20Q Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg VDSS ID25 RDS on trr = 200 V = 80 A = 28 mW £ 200 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR

15n10

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

APT5010LVR

Abstract: TO264 footprint APT5010B2VR 072K barco APT9902 094k SIL-PAD to-247 Orcus
Contextual Info: APPLICATION NOTE By: APT9902 Denis Grafham CUTTING-EDGE MOUNT DOWN METHODS BOOST POWER SEMICONDUCTOR PERFORMANCE 1 APT9902 Cutting-Edge Mount Down Methods Boost Power Semiconductor Performance and Cut System Costs Denis Grafham, European Applications Advanced Power Technology

60N25

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 60N25Q IXFK 60N25Q IXFT 60N25Q Q-Class VDSS ID25 = 250 V = 60 A = 47 mW £ 250 ns RDS on trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Symbol

26n60q

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V

TO264 footprint

Abstract: 16N90Q
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Q-Class VDSS = 900 V = 16 A ID25 RDS on = 0.65 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings

IXFH20N80Q

Abstract: IXFK20N80Q IXFT20N80Q IXFT20N80
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH20N80Q VDSS = 800 V IXFK20N80Q ID25 = 20 A IXFT20N80Q RDS on = 0.42 W Q-Class trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS

26N60Q

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V

mj 1504 transistor equivalent

Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
Contextual Info: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as

sot-227 footprint

Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
Contextual Info: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.