APT5010LVR Search Results

APT5010LVR

Abstract: apt5010l
Contextual Info: APT5010LVR 500V 47A 0.100Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

APT5010LVR

Contextual Info: APT5010LVR A dvanced P o w er Te c h n o l o g y P O W E R M O 500 ' S 47 V 0 100 2 A . Í V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

CCO-40

Abstract: APT5010LVR 250DS
Contextual Info: APT501OLVR • R A dvanced W .\A pow er Te c h n o lo g y " 500v 47a 0.1 ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

3.5kw pfc

Abstract: UC3854 for PFC 3.5kw 2kw uc3854 smps with uc2854 5010B2VR Power Factor Correction with the UC3854 UNITRODE Claudio de Sa e Silva uc3854 Application PFC 1.5kw 3kw smps pfc
Contextual Info: APT 0101 By: Denis Grafham IMPROVED POWER MOSFETS BOOST EFFICIENCY IN A 3.5kW SINGLE PHASE PFC IMPROVED POWERMOSFETS BOOST EFFICIENCY IN A 3.5KW SINGLE PHASE PFC Author: Denis Grafham, European Applications, Advanced Power Technology, F-24300 Nontron Abstract:

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

5017BVR

Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

uc3854 3kw pfc

Abstract: uc3854 Application Note Power Factor Correction With the UC3854 2kw pfc uc3854 3kw PFC 3kw APT9901 UNITRODE Claudio de Sa e Silva 3.5kw pfc 3kw uc3854
Contextual Info: APPLICATION NOTE APT9901 By: Kenneth Dierberger Denis Grafham OPTIMIZING THE DESIGN OF 3.5kW SINGLE-MOSFET POWER FACTOR CORRECTORS 1 APT9901 Optimizing The Design of 3.5kW Single-MOSFET Power Factor Correctors Kenneth Dierberger, Technical Marketing Manager

APT6015LVR

Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR
Contextual Info: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

uc3854 3kw pfc

Abstract: UNITRODE Claudio de Sa e Silva PFC 3kw Power Factor Correction with the UC3854 2kw pfc sc265 triac 2kw uc3854 3kw uc3854 UC3854 for PFC 3.5kw 3.5kw pfc
Contextual Info: APT9901 By Kenneth Dierberger and Denis Grafham OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS OPTIMIZING THE DESIGN OF 3.5KW SINGLE-MOSFET POWER FACTOR CORRECTORS Kenneth Dierberger, Manager Technical Marketing, Advanced PowerTechnology, 405 S.W. Columbia St., Bend, OR 97702, USA

APT5010LVR

Abstract: TO264 footprint APT5010B2VR 072K barco APT9902 094k SIL-PAD to-247 Orcus
Contextual Info: APPLICATION NOTE By: APT9902 Denis Grafham CUTTING-EDGE MOUNT DOWN METHODS BOOST POWER SEMICONDUCTOR PERFORMANCE 1 APT9902 Cutting-Edge Mount Down Methods Boost Power Semiconductor Performance and Cut System Costs Denis Grafham, European Applications Advanced Power Technology

Contextual Info: • r A d van c ed W :Æ P ow er jàÊM Tec h n o lo g y APT501OLVR soov 47a 0.1ooq POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

APT0103

Abstract: APT9302 APT5010LVR AN-944 APT50M75LL MOSFET IGBT THEORY AND APPLICATIONS Powercon
Contextual Info: Making Use of Gate Charge Information in MOSFET and IGBT Data Sheets Ralph McArthur Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, Oregon 97702 Power MOSFETs and IGBTs have established themselves as premier power semiconductors in