TO3 PACKAGE Search Results
TO3 PACKAGE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
TPH9R00CQH |
![]() |
MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) |
![]() |
||
TPH1R306PL |
![]() |
N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) |
![]() |
||
TPH9R00CQ5 |
![]() |
N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) |
![]() |
||
TPHR8504PL |
![]() |
N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) |
![]() |
||
TPH2R408QM |
![]() |
MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance |
![]() |
TO3 PACKAGE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
LM7805K
Abstract: F0513 LM7915 to-3 lm140AH LM7812K F0534 LM7812 TO-39 mil-std-883 F0883 5962-8874601UX
|
Original |
IP109AK-883 O204AA) IP109AK-883B IP109K-883B IP109K-8QR-B IP109MAH-883B IP109MAH-8QR-B O205AD) LM7805K F0513 LM7915 to-3 lm140AH LM7812K F0534 LM7812 TO-39 mil-std-883 F0883 5962-8874601UX | |
smd 662
Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
|
Original |
MO036 O-254 2N6782, IRFF110 2N6782U, IRFE110 smd 662 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U | |
Contextual Info: ROITHNER LASERTECHNIK PRESENTS NEW HIGH POWER RED LASER DIODES 9 mm laser diode package RLT635-100G, 635 nm, 100 mW, mm, 9 mm, datasheet RLT650-200G, 650 nm, 200 mW, mm, 9 mm, with photodiode, datasheet TO3 laser diode package RLT635-150-TO3, 635 nm, 150 mW, mm, TO3, without photodiode, datasheet |
Original |
RLT635-100G, RLT650-200G, RLT635-150-TO3, RLT635-300-TO3, RLT635-500-TO3, RLT65300T, RLT650-500-T, RLT650-1000-T, RLT635-150-C, | |
Contextual Info: -/ , Una. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS *.* DESCRIPTION TO3 Package. |
Original |
PMD18D100 100APEAK PMD18D100 100mA 300us, | |
6098B
Abstract: TO202 package SW253 SW63-6 PF527 6099B TO218 package CLP-204 6100B to3 HEATSINK
|
Original |
O39/TO5 PF527 O39/TO5 EAD063NN EAD063TH CLIP-04 EAC025HC EAC038HC EAC050HC 6098B TO202 package SW253 SW63-6 PF527 6099B TO218 package CLP-204 6100B to3 HEATSINK | |
TO3 package RthJA
Abstract: TO3 RthJA BD684 CS684 to3 HEATSINK
|
Original |
CS684 BD684 TO3 package RthJA TO3 RthJA to3 HEATSINK | |
2n7425
Abstract: 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262
|
Original |
MIL-PRF-19500 M0036 MO036 2N7394 2N6782 2N7334 2N7336 2N7335 2N6788 2n7425 2n7389 2N7422 2N7433 2N7389 TO39 TO-254 2N7269 2n7391 to39 2N7262 | |
nte5534a
Abstract: NTE5534 SCR 535 A scr control circuit for welding
|
Original |
NTE5534A NTE5534A 2500VRMS NTE5534 SCR 535 A scr control circuit for welding | |
W3400
Abstract: W3400T W3400G
|
Original |
W3400 W3400T-Tin W3400G-Gold W3400T W3400G | |
NTE405Contextual Info: NTE405 Hardware Heat Sink for TO3 Type Package Includes Base and Top Piece Description: The NTE405 is a 2-piece heat sink designed for circuit board mounting. Specifications: Finish . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Black Anodize |
Original |
NTE405 NTE405 | |
TO220 HEATSINK DATASHEET
Abstract: to220 mica 7721-7PPS Bush TO3 SILICONE MICA SHEET DATA SHEET 50A227B WARTH TO3P package 50B247A to3 HEATSINK
|
Original |
UL94V-0. O3P/TO247 50B220A 50B247A 50B003A 50A220A 50A220B 50A103A O5/TO39 TO220 HEATSINK DATASHEET to220 mica 7721-7PPS Bush TO3 SILICONE MICA SHEET DATA SHEET 50A227B WARTH TO3P package 50B247A to3 HEATSINK | |
NTE284
Abstract: NTE284MP NTE285 NTE284 equivalent audio amplifier 100w transistor npn 100w amplifier pnp matched pair 100w audio amplifier
|
Original |
NTE284 NTE285 NTE284MP NTE284 NTE285MP NTE285 NTE285MCP NTE284 equivalent audio amplifier 100w transistor npn 100w amplifier pnp matched pair 100w audio amplifier | |
Contextual Info: SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With Integrated Anti-Parallel Collector-Emitter Diode • Hermetic TO3 Metal Package. • Ideally Suited For General Purpose Switching And Amplifier Applications • Screening Options Available |
Original |
MJ4035 300us, O-204AA) | |
Contextual Info: SILICON EPITAXIAL PNP TRANSISTOR 2N4906 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated |
Original |
2N4906 O-204AA) | |
|
|||
2N4905Contextual Info: SILICON EPITAXIAL PNP TRANSISTOR 2N4905 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated |
Original |
2N4905 O-204AA) 2N4905 | |
BUX12
Abstract: LE17
|
Original |
BUX12 O-204AA) BUX12 LE17 | |
2N5883
Abstract: LE17
|
Original |
2N5883 O-204AA) 2N5883 LE17 | |
SMP525G-ENContextual Info: SMP525G-EN MECHANICAL DATA Dimensions in inches P.I.N. PHOTODIODE FEATURES PostScript Picture oved\packages\opto\to3 • ASYMMETRIC NARROW RECEIVING ANGLES • EXCELLENT LINEARITY • LOW NOISE • WIDE SPECTRAL RESPONSE • WIDE INTRINSIC BANDWIDTH • LOW LEAKAGE CURRENT |
Original |
SMP525G-EN SMP525G-EN Package1927. 900nm | |
2n5876Contextual Info: HIGH POWER SILICON PNP/NPN TRANSISTORS 2N5876 PNP 2N5878 (NPN) • High Power, Low VCE(Sat). • Hermetic TO3 (TO-204AA) Metal Package. • Ideally Suited For Power Amplifier And Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS |
Original |
2N5876 2N5878 O-204AA) 2N5876 | |
Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO |
Original |
BUX10 O-204AA) | |
150w darlington transistor to3 package
Abstract: LE17 MJ4035 TRANSISTOR C 1177
|
Original |
MJ4035 300us, O-204AA) 150w darlington transistor to3 package LE17 MJ4035 TRANSISTOR C 1177 | |
BUX11
Abstract: LE17
|
Original |
BUX11 O-204AA) BUX11 LE17 | |
Contextual Info: SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic TO3 Metal package. • Designed For Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO |
Original |
BUX10 O-204AA) | |
Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR 2N4913 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated |
Original |
2N4913 O-204AA) |