2S721
Abstract: bdy11 TO53 to-53 TO5-3 KT932A SDT5913
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE on hFE fT ICBO Max Max k>N Max ON) Min (Hz) (A) (s) PD r (CE)Mt Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts r More, (Cont'd) . . . .5 . . . .10 . . . .15 .
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ST450
2S013
2N2383
2S721
2S723
2N3138
bdy11
TO53
to-53
TO5-3
KT932A
SDT5913
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to-53
Abstract: TO111 2N5978 NPN
Text: POWER SILICON TRANSISTORS Item Number »C Part Number Manufacturer Type Max A V (BR)CEO on PD Max hFE fT ON) Min (Hz) r •CBO Max (A) Max (s) (CE)sat Max (Ohms) T Oper Package Style Max (°C) D vie s 20 Watts or More, (Cont'd) . . .5 . .10 . . . -15 -20
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2N4112
2SA1069K
2SA12
O-111
O-111
to-53
TO111
2N5978 NPN
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BD947
Abstract: to-53 a/TO111
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .
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SDT3762
SDT3752
SDT1641
SDT3305
BD947
to-53
a/TO111
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b0345
Abstract: B0815 to-53 TO53 2SC840 KT934V Matsua 2SC840 2S0288
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N1711B 2SC1419 2SC1419 2Nl085 2S0330 2S0331 BSS1S NSOS179 ~~g~~~oo 25 30 SK32SS 2S011S0Y 92GU45A 2S0288 2S0289 KT9340 KT934V B0827-10 ~~~~~~7 35 40 SML5512 SML5902 SML5907 SML5912 ST440 ST450 2S013
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B0373A
2NS705
92PE37A
B0375-10
B037M
O-12S
b0345
B0815
to-53
TO53
2SC840
KT934V
Matsua 2SC840
2S0288
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b0239c
Abstract: diode GG 66 diode 2U 66 MEAB to-53 2U 39 diode
Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N5000 2N5150 2N5602 2N5154 2N6717 92GU06 92PU06 B0379-16 ~~~~~ 30 SOT5513 SOT5513 SOT5913 B0379-25 2SC3474 2S01914 2S01981 SK3512 - :g~~:~ - 25 35 -40 45 -50 RCA1A03 S2N4863-2 S2N4863-3 SMl5509 SMl5514
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OT5503
OT5903
2N6409
2S01516
b0239c
diode GG 66
diode 2U 66
MEAB
to-53
2U 39 diode
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2SB5950
Abstract: 2SD5250 2SB616 NEC 2SD586 to-53 2SC940 NEC 2sb616 2SB595Y 2SB616 2SD586 2SD52
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO (A) (V) PD Max hFE *T ON) Min (Hz) 'CBO t0N r (CE)sat Toper Max Max (A) (s) Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . -10 . . .15
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SDT6316
SDT6416
SML1643
SML1653
2SB747
2N1211
2N1617
2SB5950
2SD5250
2SB616 NEC
2SD586
to-53
2SC940 NEC
2sb616
2SB595Y
2SB616 2SD586
2SD52
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SW203
Abstract: TO53 to-53 SW201
Text: GaAs SPDT Switch DC-2 GHz SW-201/203 ● ● ● V 2.00 TO-5-3 Features Fast Switching Speed, 6 ns Typical Ultra Low DC Power Consumption Low Loss SW-201 , Terminated (SW-203) Guaranteed Specifications * (From -55°C to +85°C) Frequency Range Model Number
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SW-201/203
SW-201)
SW-203)
SW-201
SW-203
SW-201
MIL-STD-883
SW-201,
SW203
TO53
to-53
SW201
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2SD1039
Abstract: to-53 BUW64A
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220
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2SC1984
2N4233
2SB761A
2SB929A
2SB941A
2SD1252A
2SD1266A
2SD856A
BDT31B
2SD1039
to-53
BUW64A
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b0944
Abstract: b0946 SM2177 RCA1C13 rca1c04 to-53 2n3191 2SA1120 Motorola 2N6297 2N3183
Text: POWER SILICON PNP Item Part Number Number I C 5 10 - >= 20 2S81095M MJE253 2S8860 RCA1C04 2S81095L 2S81168 2S81216 2S81095K ~~~~~ 25 30 RCA1C13 SK3626 2N6468 2N6476 SM2177 NA62U NA62W 80S18 BDS19 I(C) 35 40 50 2SA1357Y 80944 B0944 B0944F MJD210 MJD21 0-1
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MJE703T
2N6297
2S81102
2S8908
S1237
MJE254
OT3729
OT3757
b0944
b0946
SM2177
RCA1C13
rca1c04
to-53
2n3191
2SA1120
Motorola 2N6297
2N3183
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2SB5950
Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Text: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect
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2N5410
9FT36
9UX78
BUX78
2SA1069AL
2N6191
2SB869
2SB933
2SB945
2SB5950
B0540C
to-53
2SB595-0
B0242c
2N3186
2N3198
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BC177 NPN transistor
Abstract: BC377 2S026 transistor 200mhz 100w 2n930 TRANSISTOR bc177b IC202 to-53
Text: Search Results Part number search for devices beginning "2N918A" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N918ACSM NPN LCC1 15V 0.003A 20 - 1/3m 600MHz
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2N918A"
2N918ACSM
2N918ACSM-JQR-B
2N918ADCSM
600MHz
2N918AQF
600MHz
75MHz
BC177 NPN transistor
BC377
2S026
transistor 200mhz 100w
2n930
TRANSISTOR bc177b
IC202
to-53
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2SA1012Y
Abstract: 2SA1012-Y to-53 2SB116 2N3180 2N3184
Text: POWER SILICON PNP Item Number Part Number I{C 5 10 >= 5 A, 2SB1165 2SB1203 2SA1012Y 2SA1244Y MJ2268 SML3708 SML3711 SML3704 SML3727 SML3776 ~~t~~~~ 15 20 SML3702 SML3751 2N3176 2N3180 2N3180 2N3180 2N3184 2N3188 ~~~~~~ 25 30 SDT3722 SDT3722 SDT3722 SDT3730
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SDT3711
BFT35
2SA1069L
2SA1394L
2SA1012Y
2SA1012-Y
to-53
2SB116
2N3180
2N3184
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TO111
Abstract: 2SD189 to-53 2SC647 2SD772B
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT •CBO Max ON) Min (Hz) (A) r Max (s) Max (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or Mor , (Cont'd) . . . .5 -10 2SD772 2SD772A
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2SD772
2SD772A
2SD772B
CX702
BD951
BD952
SDT6012
TO111
2SD189
to-53
2SC647
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TIC 115
Abstract: BD117 to-53 HSE2000 ss2017 2N396 tic 115 d bd112
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) Max (W) hFE Min *T (Hz) Max k>N Max (A) (8) ICBO r (CE)sa« 'Oper Max (Ohms) Max <°C) Package Style D vices 20 Watts or Mor . . . .5 . . . -10 . . .15 20 -25 -30
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2N3959
2N3960
TRF641
TRF646
TRF648
TRF453
TRF453A
TRF455
TRF455A
TRF454
TIC 115
BD117
to-53
HSE2000
ss2017
2N396
tic 115 d
bd112
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TO82 TRANSISTOR
Abstract: TO82 2N2227
Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C
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OCR Scan
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25MQSa
2N1015
2N1015A
2N1015B
2N1015C
2N1015D
2N1904
2N1936
2N1937
2N2015
TO82 TRANSISTOR
TO82
2N2227
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TO82 TRANSISTOR
Abstract: npn 2N2383 2N2753 2NXXXX 2N1069 TO53 transistor 2n2383 2n1117 2N1620 2N2227
Text: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE |ù 2 5 M Q S a 0 00 07=11 M J ' ^ T g ^ T p f leMax Amps VCECHSUS Polarity 2N1015 2N1015A 2N1015B 2N1015C
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OCR Scan
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PDF
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e6DjP073L.
254D22
2N1015
2N1015A
2N1015B
2N1015C
2N1015D
2N1015E
2N1016
2N1016A
TO82 TRANSISTOR
npn 2N2383
2N2753
2NXXXX
2N1069
TO53
transistor 2n2383
2n1117
2N1620
2N2227
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anzac 112
Abstract: TO53 anzac sw-112 ANZAC h-81-4 ANZAC h-9
Text: n/A-COn INC/ AJ/aH ' ANZAC H V S IE Ï • 5M5177 0003511 lat ■ ANZ ANZAC RF& CELLULAR COMPONENTS RF Control Devices SPST S w itc h e s MODEL NO. SW-121 SW-161 SW-211 SW-213 SW-341 SW-342 SW-344 SW-367 SW-111 SW-131 SW-209 SW-209B SW-212 SW-214 SWS-278"
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OCR Scan
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PDF
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5M5177
SW-121
SW-161
SW-211
SW-213
SW-341
SW-342
SW-344
SW-367
SW-111
anzac 112
TO53
anzac sw-112
ANZAC h-81-4
ANZAC h-9
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TO53
Abstract: No abstract text available
Text: A ß C GaAs SPST Switch DC-3 GHz SW-211/213 • Fast Switching Speed, 6ns Typical ■ Ultra Low DC Power Consumption ■ Low Loss SW-211 , Terminated (SW-213) TO-5-3 0.36 (9 14 ±0.5) 0.200 MAX (sjL t ' 0 500 WIN (12 7) Guaranteed Specifications* (From - 55°C to +85°C)
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OCR Scan
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PDF
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SW-211)
SW-213)
SW-211/213
SW-211
SW-213
TO53
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anzac 112
Abstract: SW-367 TO53 SW-111 SW-121 SW-161 SW-211 SW-213 SW-341 SW-342
Text: tl/A-COM INC/ ANZAC HIV 51E 1> • 5M5177 ODDSS^ ant - ANZ ANZAC RF& CELLULAR COMPONENTS RF Control Devices SPST Switches INSERTION LOSS dB TYP FREQUENCY RANGE (MHz) St/GaAs SW-121 SW-161 SW-211 SW-213 SW-341 SW-342 SW-344 SW-367 SW-111 SW-131 SW-209 SW-209B
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OCR Scan
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PDF
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SW-121
SW-161
SW-211
DC-2000
SW-213
SW-341
SW-342
anzac 112
SW-367
TO53
SW-111
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TO53
Abstract: No abstract text available
Text: M an A M P com pany GaAs SPST Switch DC - 3 GHZ SW-211/213 Features TO-5-3 • Fast Switching Speed. 6 ns Typical • Ultra Low DC Pow er Consum ption • Low Loss .SW-211 , Term inated (SW-213) Guaranteed Specifications* (From 55°c to +85°c) Frequency Range
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OCR Scan
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PDF
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SW-211)
SW-213)
SW-211/213
SW-213
SW-213
SW-211
TO53
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SW-203
Abstract: SW203
Text: W an A M P com pany GaAs SPDT Switch DC-2 G Hz SW-201/203 TO-5-3 Features • Fast S w itc h in g S peed, 6 ns T y p ic a l V 2.00 0.36 DIA. , 9 .1 4 ± 0 . 5 \ | n . X " - - • U ltra L o w DC P o w e r C o n s u m p tio n 0 .200 MAX (5.08 i • L o w Loss (SW-201 ), T r n iu n :iu - |I (S W -iO .i)
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OCR Scan
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PDF
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SW-201
SW-201/203
SW-203
SW-201,
SW-201
SW-203
SW203
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TO53
Abstract: 504 BC
Text: Mfecm m an A M P com pany GaAs SPST Switch DC-3 GHz SW-211/213 V 2.00 TO-5-3 Features • PIN 6 f 0.200 MAX ' 5.08 Fast S w itch in g S p e e d , 6 ns T ypical • Ultra Low DC P o w e r C o n su m p tio n • l,ow Loss (S W -2 1 1 ), T e rm in a te d (S W -213)
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OCR Scan
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PDF
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SW-211/213
SW-211
SW-213
Show300
SW-211
MIL-STD-883
TO53
504 BC
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81 211 W 07
Abstract: No abstract text available
Text: f a n A M P ,c o m p a n y GaAs SPST Switch DC - 3 GHZ SW-211/213 V2.00 Features TO-5-3 • F astSw itching S p e ed , 6 n s T y p ic a l • U Jtta Low DC Pow erC o n su m p t b n • Low L oss SW -2 1 1 , Temi inated (SW -213) Guaranteed Specifications* (From55 c to+85°c)
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OCR Scan
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PDF
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SW-211/213
81 211 W 07
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SW-355
Abstract: BC 584
Text: H/A-COM/ MICROELECTRONICS bTE » • SbME103 Q0ÛD7D1 7TD «I1ACO GaAs DPDT Switch DC-2 GHz SW-355 TO-5-3 Features • Fast Switching Speed, 10 ns Typical • Ultra Low DC Power Consumption • Low Insertion Loss Guaranteed Specifications1 -55°ct0+85°o
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OCR Scan
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PDF
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SbM21Ã
D00G7D1
SW-355
Transienb37
SW-355
BC 584
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