2SD52 Search Results

2SD525

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in nsn POWER AMPLIFIER APPLICATIONS. 0 3 .6 * 0.2 wÛ FEATURES: • High Breakdown Voltage : V q £q =100V • Low Collector Saturation Voltage : VcE sat = 2 .0V(Max.) • Complementary to 2SB595. • Recommended for 30W High Fidelity Audio

2SB596

Abstract: 2SD526 2SD52
Contextual Info: JMnic Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity audio frequency amplifier output stage

2SB596

Abstract: pnp hfe 120-240 2SD526
Contextual Info: SavantIC Semiconductor Product Specification 2SB596 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD526 ·Good linearity of hFE APPLICATIONS ·Power amplifier applications ·Recommend for 20 25W high fidelity audio frequency amplifier output stage

2sc1815

Abstract: 2SC4698 2SC930 2SC1684 S 2SC1684 2SC828 2SC2988 2SC387A 2SC829 2SD917
Contextual Info: - m tì: % Type No. Manuf. JÊ « SANYO 2 TOSHIBA 'S NEC B ÎL HITACHI ¡ÜÍ ± iS FUJITSU fò T MATSUSHITA * 2SC lb V - - 2SC 17 3K zsuöza * $ 2SC829 * 2SC 17A M. $ 2SC 18 S 2 2SC829 * * 2SC 21 S 2SC521A * 2SC 22 S m 2SD526 * 2SC 23 - d M 2SD526 a±a * 2SC 26

Contextual Info: V IJ a > P N P = m m 2SB596 •¥-fö : mm 0 3 .6 + 0 .2 3 Wÿ v>0 coÊ MU &Ä • hpE • 2SD526 t : P c = 30W T c = 25°C V' o 7' ') * 'y 9 ') (; &■ <0 i t o 3 > 20~ 25 W ^ ' f 7 7 /í í - f ' í t T > (Ta = 25°C) m g a2 ■§• ÎË i& M f£ VCBO

2sb595

Abstract: 2sb595o 2SB595-O transistor 2sd525
Contextual Info: 2SB595 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 POWER AMPLIFIER APPLICATIONS. U nit in mm • High Breakdown Voltage : V^EO = —100V • Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) • Complementary to 2SD525.

transistor 2sd525

Abstract: 2SD525
Contextual Info: TO SH IBA 2SD525 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD525 Unit in mm 10.3MAX. ¿ 3.6 ±0.2 High Breakdown Voltage : VCEO = 1 OV Low Collector Saturation Voltage : Vce ( s a t ) “ 2.0V (Max.) Complementary to 2SB595.

2SB596

Abstract: 2SD526 AC75 20-25W
Contextual Info: TOSHIBA 2SD526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm PO W ER AM PLIFIER APPLICATIONS 43.6 + 0.2 • • • • High Power Dissipation : P0 = 3OW Te = 25°C Good Linearity of hjrg. Complementary to 2SB596. Recommend for 20~25W High Fidelity Audio Frequency

transistor D526

Abstract: D526 d526 y D526 transistor d526 - y 2SD526 toshiba D526 30W AUDIO AMPLIFIER
Contextual Info: TOSHIBA 2SD526 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • • SILICON NPN TRIPLE DIFFUSED TYPE 2S D526 High Power Dissipation : Pq = 30W T c = 25°C Good Linearity of hpE. Complementary to 2SB596. Recommend for 2Q~25W High Fidelity Audio Frequency

2SB595

Abstract: 2SD525 AC75
Contextual Info: TO SH IBA 2SB595 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • • SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB595 High Breakdown Voltage : V qeo = —100V Low Colleetor-Emitter Saturation Voltage : VCE(sat)“ —2.0V (Max.) Complementary to 2SD525.

2SB595

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE 2SB595 Unit in mm 10.3 MAX. 03.6ÍO.2 POWER AMPLIFIER APPLICATIONS. FEATURES: • High Breakdown Voltage : V^gQ-100V • Low Collector-Emitter Saturation Voltage : VcE sat =~2.0V(Max.) • Complementary to 2SD525. 1.5 MAX

2SD526

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in POWER AMPLIFIER APPLICATIONS. 03. 6± O .2 FEATURES : • High Power Dissipation : P C=30W Tc=25°C • Good Lineality of h p E . • Complementary to 2SB596. • Recommended for 20 'v 25W High Fidelity Audio

2sb596

Abstract: 2SD526 ic audio amplifier 2*5w
Contextual Info: Inchange Semiconductor Product Specification 2SB596 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD526 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity

2SD454

Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
Contextual Info: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *

2SD525

Abstract: 2SB595
Contextual Info: SavantIC Semiconductor Product Specification 2SD525 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB595 ·High breakdown voltage :VCEO=100V ·Low collector saturation volage : VCE sat =2.0V(Max) APPLICATIONS ·Power amplifier applications

2SB596 LB

Abstract: 2SB596 2SD526
Contextual Info: ÆàMOSPEC PNP SILICON POWER TRANSISTORS .designed for use in general power amplifier application FEATURES: * Low Collector-Emitter Saturation Voltage v CE satf 10V(Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 40-240@lc= 0.5A * Complementary to NPN 2SD526

NPN 80V 3A

Abstract: 2SA671 2SD526 transistor 2SD526
Contextual Info: 2SD526 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SA671 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)

2SD 388 A

Abstract: 2Sd427 2SD313 2SC2320 2SD650 2SC2073 2SD867 2SC2204 2sd1138 2SD2061
Contextual Info: - m £ Type No. tt s Manuf. M 2SÜ1135 2SD1266A 2SC4007 2SD1135 2SD1266 2SÜ2023 2SD1135 2SDÎ266A 2SC4007 2SD526 2SD313 2SD880 2S0 366A fé T 2SD313 2SD526 2SD 367 fé T / H n ✓ M M z. 2SD 371 2SD1884 2SD820 2SD380 2SD867 2SD319 2SD427 2SD716 2SD 373 -

2SD2061

Abstract: 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783
Contextual Info: - m % € tt Manuf. h a m SANYO TOSHIBA m NEC a ti HITACHI * ± FUJITSU a fâ T MA T S U S H I T A £ MITSUBISHI E. □ — A ROHM ¿ou i¿u vn; S ÎL ¿dUd¿0 2SCÍ338 2SD2081 * 2SD 121 H 2SD525 2SC1398 2SD2061 * 2SD 122 0 ÍL a £ 2SD526 2SD1266A 2SD2061

2SD526

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD526 Unit in mm POWER AMPLIFIER APPLICATIONS. J2Í3.6±0.2 FEATURES : • High Power Dissipation : PC=30W Tc=25°C • Good Linearity of hpg. • Complementary to 2SB596. • Recommended for 20 ^ 25W High Fidelity Audio

Contextual Info: 2SB596 SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES: • Good Linearity of hpj;. ■ Complementary to 2SD526. • Recommended for 20 ^ 25W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

2SD526

Abstract: 2SB596
Contextual Info: Inchange Semiconductor Product Specification 2SD526 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB596 ・Good linearity of hFE APPLICATIONS ・Power amplifier applications ・Recommend for 20～25W high fidelity

2SD636 R

Abstract: 2SD636 2SB615 2SD650H 2SB613 2SD511 2SD646 2SD637 2SB631 2SD601
Contextual Info: - 220 - Ta=25tC, *EP(àîc=25tC M & 2SD526 t± & ÄS 2SD545 m V'cEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) 80 80 4 LF PA 25 25 1 220 180 15 70 50 7 Ä 2 PA/PSW/DDC/Reg 2SD553 Ä S PSW/PA m VCBO PA 2SD552 2SD560 m ICEO (max) (/¿A) 30 0. 6 n k 4$ 14 hF E Vc b

2SB596

Contextual Info: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB596 U nit in mm PO W ER A M PLIFIER APPLIC ATIO N S. • • • 0 3 .6 1 0 .2 Good Linearity of hpg. Complementary to 2SD526. Recommended for 20~25W High-Fidelity Audio Frequency Amplifier Output Stage. M A X IM U M RATIN GS (Ta = 25°C)