TO66 Search Results

2N3767

Abstract: LE17
Contextual Info: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

2N5629

Contextual Info: Search Results Part number search for devices beginning "2N5430" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5430 NPN TO66 100V 7A 60 240 2/2 30MHz

Contextual Info: POSITIVE ADJUSTABLE VOLTAGE REGULATOR IP117R IP117AR IP117HVR IP117AHVR / / / / LM117R LM117AR LM117HVR LM117AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package

Contextual Info: SILICON NPN BIPOLAR TRANSISTOR BUX62 • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO IC PD TJ Tstg Collector - Emitter Voltage

Contextual Info: NEGATIVE ADJUSTABLE VOLTAGE REGULATOR IP137R IP137AR IP137HVR IP137AHVR / / / / LM137R LM137AR LM137HVR LM137AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package

NTE369

Abstract: Transistor 800V
Contextual Info: NTE369 Silicon NPN Transistor TV Vertical Deflection, Switch Description: The NTE369 is an NPN transistor in a TO66 type case designed for high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCBO = 800V D Gain Specified to 200mA

NTE124

Abstract: 325V
Contextual Info: NTE124 Silicon NPN Transistor High Voltage Power Output Description: The NTE124 is a general purpose transistor in a TO66 type package designed for high speed switching, linear amplifier applications, high voltage operational amplifiers, switching regulators, converters,

NTE131MP

Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
Contextual Info: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.

NTE404

Contextual Info: NTE404 Hardware Heat Sink for TO66 Type Package Includes Base and Top Piece Description: The NTE404 is a 2-piece heat sink designed for circuit board mounting. Specifications: Finish . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Black Anodize

Contextual Info: 2N4910X 2N4911X 2N4912X MECHANICAL DATA Dimensions in mm inches NPN EPITAXIAL POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. FEATURES 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034)

Contextual Info: SILICON NPN TRANSISTOR 2N3767 • Low Saturation Voltage • High Gain Characteristics • Hermetic TO66 Metal Package • High Reliability Screening Options Available • Switching and Medium Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated

tcase

Contextual Info: BUX77A BUX78A Bipolar NPN / PNP Devices in a Hermetically Sealed TO66 Metal Package MECHANICAL DATA Dimensions in mm • Hermetic Metal Package 3.61 0.142 4.08(0.161) rad. 11.94 (0.470) 12.70 (0.500) 2 • Screening Options Available 0.71 (0.028) 0.86 (0.034)

lm137 datasheet

Abstract: IP137AHVR IP137AR IP137HVR IP137R LE17 LM137AHVR LM137AR LM137HVR LM137R
Contextual Info: NEGATIVE ADJUSTABLE VOLTAGE REGULATOR IP137R IP137AR IP137HVR IP137AHVR / / / / LM137R LM137AR LM137HVR LM137AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package

pnp 500v

Abstract: vbe 10v, vce 500v NPN Transistor NTE175 NTE38
Contextual Info: NTE38 PNP & NTE175 (NPN) Silicon Complementary Transistors High Voltage, Medium Power Switch TO66 Type Package Description: The NTE38 (PNP) and NTE175 (NPN) are complementary silicon transistors in a TO66 type package designed for high−speed switching and linear amplifier applications for high−voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers.

J 2N3054

Abstract: transistor 101 UP2-TO66-B to-66 transistor
Contextual Info: UP2 Series for 1O-66 Outline UP2-TO66-CB w /2N3054 cr., '"'1 U 101 ~1 1Z w 00 ~ < w > ID < W / ~ n: ~ W 1W (/) < U 00 (TO-66) TRANSISTOR DESCRIPTION OF CURVES N.C. Horiz.Device Only Mounted to G.10. 90 .N.C. Horiz. & Vert. With Dissipator. .200 FPM w/Diss.

TO61 package

Abstract: TO111 package 2N6262 2N6226 2N6353 2N5007 2N6350 2N6351 2N6352 2N6354
Contextual Info: 16 u J M Ê E L E C T R O N I C S , IN C. COLLECTOR CURRENT = 10 AMPS NPN TYPES— Continued Device No 2N6262 2N6350 2N6351 2N6352 2N6353 2N6354 2N6383 2N6384 2N6385 2N6495 VCBO VCEO sus Case Volts Volts 150 170 TO-3 80 TO-33 80 TO-33 150 150 80 80 TO66/3

IC 8823

Contextual Info: SILICON NPN TRANSISTOR 2N6235R • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg

Contextual Info: Search Results Part number search for devices beginning "BUX61" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BUX61 NPN TO66 200V 8A 20 60 4/3 8MHz 70W

Contextual Info: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz

TO276AA

Abstract: 2n4910
Contextual Info: Search Results Part number search for devices beginning "2N4910" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4910 NPN TO66 40V 4A 20 100 1/0.5 3MHz

W3406T

Abstract: W3406
Contextual Info: Iss: 1 WINSLOW ADAPTICs W3406 TO66P Transistor Socket W3406 TO66P 5A Part Numbers W3406T-Tin Filled Phenolic Resin Also available from Winslow Adaptics are cost effective, time saving solutions to test, obsolescence, supply problems and upgrades. OEMs can upgrade equipment with custom Adaptics utilising additional logic, often saving considerable cost and time on re-design. If lead-time becomes an issue contact us for a suitable package converter. We specialise in conversion of all package lead-frames. For

LM117R

Abstract: IP117 IP117AHVR IP117AR IP117HVR IP117R LE17 LM117 LM117AHVR LM117AR
Contextual Info: POSITIVE ADJUSTABLE VOLTAGE REGULATOR IP117R IP117AR IP117HVR IP117AHVR / / / / LM117R LM117AR LM117HVR LM117AHVR FEATURES • • • • • APPLICATIONS 1.5A Output Current Guaranteed Internal Thermal Overload Protection Output Short Circuit Protected Hermetic Metal TO66 Package

TRANSFORMER 220v to 9V

Abstract: 220v 2a diode bridge NTE384 220v 20v 4a
Contextual Info: NTE384 Silicon NPN Transistor High Voltage Power Amp/Switch Description: The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere characteristic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform current flow throughout the structure, which produces a high IS/b and a large safe–operation–area.

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BDX14A • Hermetic Metal TO66 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VCER VCEX VEBO