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    2N6298 Price and Stock

    Microchip Technology Inc 2N6298

    PNP TRANSISTOR
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    Microchip Technology Inc JAN2N6298

    TRANS PNP DARL 60V 8A TO66
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    Microchip Technology Inc JANTX2N6298

    TRANS PNP DARL 60V 8A
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    Microchip Technology Inc JANTXV2N6298

    TRANS PNP DARL 60V 8A TO66
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    Central Semiconductor Corp 2N6298

    Complementary Silicon Darlington Power Transistor 60V 8A 2-Pin TO-66 (Alt: 2N6298)
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    2N6298 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6298 Microsemi PNP Darlington Power Silicon Transistor Original PDF
    2N6298 Motorola Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Original PDF
    2N6298 Semelab Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Original PDF
    2N6298 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Scan PDF
    2N6298 Central Semiconductor BJT, PNP, Power Transistor, IC 8A - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Scan PDF
    2N6298 Mospec POWER TRANSISTORS(8A, 75W) - Pol=PNP / Pkg=TO66 / Vceo=60 / Ic=8 / Hfe=750-18k / fT(Hz)=4M / Pwr(W)=75 Scan PDF
    2N6298 Motorola The European Selection Data Book 1976 Scan PDF
    2N6298 Motorola Power Transistor Selection Guide Scan PDF
    2N6298 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6298 Motorola European Master Selection Guide 1986 Scan PDF
    2N6298 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6298 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6298 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6298 Unknown Transistor Replacements Scan PDF
    2N6298 Unknown Transistor Replacements Scan PDF
    2N6298 Unknown Transistor Replacements Scan PDF
    2N6298 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6298 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6298 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6298 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6298 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6300

    Abstract: 2N6301 2N6298
    Text: SavantIC Semiconductor Product Specification 2N6300 2N6301 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON ·Low collector saturation voltage ·Complement to type 2N6298/6299 APPLICATIONS ·General purpose power amplifier and low frequency switching applications


    Original     		PDF 2N6300 2N6301 2N6298/6299 2N6300 2N6301 2N6298

    2N6298

    Abstract: 2N6298 JAN
    Text: 2N6298 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a


    Original     		PDF 2N6298 O213AA) 1-Aug-02 2N6298 2N6298 JAN

    Untitled

    Abstract: No abstract text available
    Text: 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series types are complementary silicon darlington power transistors manufactured by the epitaxial base process


    Original     		PDF 2N6298 2N6299 2N6300 2N6301 Operatin00) 100mA 2N6299, 2N6301) 100kHz

    Untitled

    Abstract: No abstract text available
    Text: 2N6298 and 2N6299 PNP Darlington Power Silicon Transistor Available on commercial versions Qualified per MIL-PRF-19500/540 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed PNP transistor is rated at 8 amps and is military qualified up to a JANTXV


    Original     		PDF 2N6298 2N6299 MIL-PRF-19500/540 O-213AA O-213AA 2N6299. MIL-PRF-19500/540. T4-LDS-0310,

    semelab 2N6287

    Abstract: 2N6300J 2n6278 to63
    Text: Search Results Part number search for devices beginning "2N6298" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N6298 PNP TO66 60V 8A 750 18000 3/4 4MHz


    Original     		PDF 2N6298" 2N6298 2N6298-JQR-B 2N6276" 2N6276 2N6276A 2N6276A-JQR-B 2N6276-JQR-B 2N6374" 2N6374 semelab 2N6287 2N6300J 2n6278 to63

    2N6296

    Abstract: 2N6297 2N6298
    Text: SavantIC Semiconductor Product Specification 2N6296 2N6297 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON ·Complement to type 2N6294/6295 APPLICATIONS ·For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original     		PDF 2N6296 2N6297 2N6294/6295 2N6296 2N6298 2N6297 2N6298

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original     		PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    2N6296

    Abstract: 2N6297 2N6294 2N6298
    Text: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6296 2N6297 DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original     		PDF 2N6296 2N6297 2N6294/6295 2N6296 2N6298 2N6297 2N6294 2N6298

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


    Original     		PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420

    SGS-Ates

    Abstract: sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max A V(BR)CEO Of) PD hFE Max ON) Min Max *T 'CBO Max tr Max (Hz) (A) (8) r (CE)sat Max (Ohms) T Oper Max Package Style <°C) Darlington Transistors, PNP (Cont'd) . . . .5 . . . .10 . . 15 .


    Original     		PDF SDM3203 SDM3201 SDM3204 SGS125 TIP125 TIP625 MJE1090 SGS-Ates sgs-ates transistors BD698 2SB1146 bd266 Motorola TIP125

    Diode 1N41

    Abstract: PF7001 CD4583 transistor cd4578 1N7041 1N41 CD4107 2N2326S JANS2N2907A CD4617
    Text: Hi-Rel Components from Aeroflex / Metelics Diodes Switching Zener TC Zener Current Regulators Transistors Small Signal Medium & High Power Darlingtons Silicon Controlled Rectifiers JANHC and JANKC Chips DLA Certified JAN–JANS Short Form Catalog August 9, 2012


    Original     		PDF DO-35 1N461 1N4616- MIL-PRF-19500 nMIL-STD-750 nISO9001-2008 SFMHR-8-09-12 Diode 1N41 PF7001 CD4583 transistor cd4578 1N7041 1N41 CD4107 2N2326S JANS2N2907A CD4617

    2N6297

    Abstract: 2N6296 2N6298
    Text: Product Specification www.jmnic.com 2N6296 2N6297 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・DARLINGTON ・Complement to type 2N6294/6295 APPLICATIONS ・For high gain amplifier and medium speed switching applications PINNING See Fig.2


    Original     		PDF 2N6296 2N6297 2N6294/6295 2N6296 2N6298 2N6297 2N6298

    2n3055 motorola

    Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
    Text: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,


    Original     		PDF 1PHX11122C 2n3055 motorola tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    2N6298

    Abstract: 2N6299 2N6300 2N6301
    Text: 2N6298, 2N6299 PNP I 2N6300, 2N6301 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 100 mA, lB = 0 ) Collector Cutoff Current ( V CE = 30 V, lB = 0 )


    OCR Scan     		PDF 2N6298, 2N6299 2N6300, 2N6301 2N6300 2N6299, 2N6301 2N6300 2N6298

    2N6649A

    Abstract: 2N63 2n6301a 2n6353a
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS PNP TO-66 2N6298A 60 2N6299A @ Ic/ ^ C E min/max @ A/V VcE(Mt) @ I c/I b V @ A/A c <p P fx (MHz) 8.0 750/18000@6/3 2.0@4/.016 300 4.0 80 8.0 750/18000@6/3


    OCR Scan     		PDF 2N6298A 2N6299A 2N6648A 2N6649A 2N6650A 2N6300A 2N6301A 2N6383A 2N6385A 2N6352A 2N63 2n6353a

    2N6352

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR PACKAGE PNP TO-66 Ic VcEO sus VOLTS (max) AMPS ^FE @ ^CE min/max @ A/V @Ic/Iß V @ A/A C<p P Ìt (MHz) 2N6298 60 8.0 750/18000@6/3 2.0@4/.016 300 4.0 2N6299 80 8.0 750/18000@6/3 2.0@4/.016 300 4.0


    OCR Scan     		PDF 2N6298 2N6299 2N6648 2N6649 2N6650 2N6300 2N6301 2N6383 2N6384 2N6385 2N6352

    2N6300

    Abstract: No abstract text available
    Text: M OT OR OL A SC X S TR S /R 1SE D I L3b7254 QQflMSTS 5 I F • 2N6053, 2N6054 2N6298, 2N6299 PNP 2N6055, 2N6056 2N6300, 2N6301 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA D ARLIN GTO N COM PLEM EN TARY SILICON POWER TRAN SISTO RS DARLINGTON 8 AM PERE . . . designed for general-purpose amplifier and low frequency switching


    OCR Scan     		PDF L3b7254 2N6053, 2N6054 2N6298, 2N6299 2N6055, 2N6056 2N6300, 2N6301 2N6300

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    1040B

    Abstract: 2N3910 svt6062 2n5100
    Text: =1 TYPE 1015 NPN 1 GEOMETRY PHYSICAL CHARACTERISTICS 1. 2. 3. 4. Chip size. Chip hickness. Top metal. Back metal. 5. Backside. 6. Bonding pad. 2020 PNP 1. 2. 3. 4. Chip size. Chip thickness. Top metal.


    OCR Scan     		PDF 1020B 15X19 3kA/10kA/I0kA 3kA/10kA/10kA 2N6674 2N6675 2N6676 2N6677 1040B 2N3910 svt6062 2n5100

    2N3741 MOTOROLA

    Abstract: 2N3585 MOTOROLA 2N3766 MOTOROLA 2N3583 MOTOROLA 2n6299 motorola 2N4900 MOTOROLA 2N6424 2n3584 motorola 2N6424 MOTOROLA 2N4910
    Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-66 Package CASE 80-02 STYLE 1: PIN 1. 2. CASE. BASE EMITTER COLLECTOR Resistive Switching lcCont V c E O (SUB) Amps Max Volts Min 1 Device Type NPN PNP Am p Min @ 25°C 3 25 20/100 0.5 0.6 typ 0.3 typ 0.5


    OCR Scan     		PDF 2N4910 2N4898 2N4911 2N4899 2N4912 2N4900 2N3583 2N6420 2N3738 2N6424 2N3741 MOTOROLA 2N3585 MOTOROLA 2N3766 MOTOROLA 2N3583 MOTOROLA 2n6299 motorola 2N4900 MOTOROLA 2n3584 motorola 2N6424 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024


    OCR Scan     		PDF 2N6058 2N6059 2N6350 2N6351 14-PtN

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR NPN DARLINGTON POW ER T R A N S IST O R S TO-33 / JmD F‘ 24 TO-213/ VCE sat PEAK 'c AMPS hFE min/max < BVc e O VOLTS < o m DEVICE TYPE o PACKAGE max VOLTS 'c @ ' b A A 2N6350* 80 5.0 2000 1.0/5.0 1.5 5.0/0.005 2N6351* 150 5.0 1000 1.0/5.0 1.5 5.0/0.01


    OCR Scan     		PDF 2N6352* 2N6300* 2N6383* 2N6384* 2N6385* O-213/ 2N6351* 2N6301* 2N6350* 2N6353*