TO92 FET P CHANNEL Search Results

ZVP2110A

Contextual Info: Not Recommended for New Design Please Use ZVP2110A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω G REFER TO ZVP2110A FOR GRAPHS D G D S E-Line TO92 Compatible

ZVP2106

Abstract: zvp2106a
Contextual Info: Not Recommended for New Design Please Use ZVP2106A P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106C ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS on =5Ω G D REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4424A ISSUE 2 – SEPTEMBER 94 FEATURES * 240 Volt VDS * RDS on =9Ω * Low threshold APPLICATIONS * Electronic Hook Switch D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

3412 to92

Abstract: fet to92 3TF20 ZVP054 to92 fet p channel ZVP0540A P-Channel Enhancement Mode Vertical DMOS FET VDS25 DSA003786
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0540A ISSUE 2 – MARCH 94 FEATURES * 400 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -400 UNIT V Continuous Drain Current at Tamb=25°C

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3306A ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS on =14Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -60 V Continuous Drain Current at Tamb=25°C

ZVP3310A

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP3310A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =20Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -100 V Continuous Drain Current at Tamb=25°C

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545A ISSUE 2 – MARCH 94 FEATURES * 450 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -450 V Continuous Drain Current at Tamb=25°C

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120A ISSUE 2 – MARCH 94 FEATURES * 200 Volt VDS * RDS on =25Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -200 UNIT V Continuous Drain Current at Tamb=25°C

to92 fet p channel

Abstract: ZVP0545A DSA003786 3TF20
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP0545A ISSUE 2 – MARCH 94 FEATURES * 450 Volt VDS * RDS on =150Ω D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE UNIT -450 V Continuous Drain Current at Tamb=25°C

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4105A ISSUE 2 – MARCH 94 FEATURES * 50 Volt VDS * RDS on =10Ω * Low threshold D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -50 V Continuous Drain Current at Tamb=25°C

BS250p

Abstract: ZVP2106A fet to92 to92 fet p channel bs250 to92 fet DSA0037522
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS250P ISSUE 2 – SEPT 93 FEATURES * 45 Volt VDS * RDS on =14Ω D G REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -45 V Continuous Drain Current at Tamb =25°C

zvp2106a

Abstract: ZVP2106C
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2106C ISSUE 2 – MARCH 94 FEATURES * 60 Volt VDS * RDS on =5Ω G D REFER TO ZVP2106A FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE -60 UNIT V Continuous Drain Current at Tamb=25°C

ZVP2106A

Contextual Info: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2106A ISSUE 2 – M ARCH 94 FEATURES * 60 Volt VDS * RDS on =5Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -60 V Contin uo us Drain Cur r en t at T am b=25°C

Contextual Info: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -100 V Contin uo us Drain Cur r en t at T am b=25°C

J598J

Contextual Info: FJN598J FJN598J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92 1 1. Source 2. Gate 3. Drain Si N-channel Junction FET

KSK30OBU

Contextual Info: KSK30 KSK30 Low Noise PRE-AMP. Use • High Input Impedance: IGSS=1nA MAX • Low Noise: NF=0.5dB (TYP) • High Voltage: VGDS= -50V TO-92 1 1. Source 2. Gate 3. Drain Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: S A MS U N G SEMICONDUCTOR 14E INC D I 71b4].45 GOG7004 T | SI N-CHANNEL JUNCTION FET KSK123 T-29-25 AF IMPEDANCE CONVERTER SOT-23 • BUILHN DIODE BETWEEN G AND S • LOW NV ABSOLUTE MAXIMUM RATINGS Ta = 25°C Characteristic Drain Source Voltage Drain Gate Voltage

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

Contextual Info: SAMSUNG S EM ICO NDUC TOR INC 14E D I 711*4142 OOOl. Tl? B | KSK65 Si N-CHANNEL JUNCTION FET T-29-25 AF IMPEDANCE CONVERTER • BuiIMn Diode Between G and S • Low NV ABSOLUTE MAXIMUM RATINGS T8=25°C Characteristic Drain-Source Voltage Gate-Drain Voltage

FET BFW10

Abstract: BC244 Fet NF510 NF510 Fet 2SK520 BFW10 FET FET bf244 FET tis34 NF510 NEC 200j
Contextual Info: JUNCTION FET Item Number Part Number 91. IDSS Manufacturer VOS Off CI. Max Max PD Max Toper Max Package Style N-Channel JFETs, (Co nt' d) 5 10 15 20 TP4224 2N4224 SMP5248 TMPF5248 TP5248 TP5248 BFW10 MMF1 MMF2 MMF3 4 MMF5 MMF6 SMP3823 TIS34 TMPF3823 TP3823

Contextual Info: KSK117 KSK117 Low Requency Low Noise AMP • HighYFS: 15mS TYP • High Input Impedance: IGSS= -1nA • Low Noise, NF =1dB (TYP) TO-92 1 1. Drain 2. Gate 3. Source Silicon N-channel Junction Fet Absolute Maximum Ratings Ta=25°C unless otherwise noted

8SS138

Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
Contextual Info: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T

FJN598J

Contextual Info: FJN598J FJN598J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92 1 1. Source 2. Gate 3. Drain Si N-channel Junction FET

transistor

Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
Contextual Info: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor