TO92M Search Results

TA78L008AP

Abstract: A78L05 A78L 78LXX
Contextual Info: Voltage Regulators 1C 3-Terminal Regulators 1 Function Type No. TA78DS05BP 5 TA78DS06BP 6 TA78DS08BP TA78DS09BP TA78DS10BP Low output current Low dropout 8 9 TA78DS12BP 12 TA78DS15BP 15 TA78DS05F 5 TA78DS06F 6 TA78DS08F Low output current 8 TA70DSO9F Low dropout

BENT LEAD transistor TO-92 Outline Dimensions

Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c
Contextual Info: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI­ CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N

78xx voltage regulator

Abstract: REGULATOR IC 78XX TA76494P tl494 equivalent 78xx regulator 79xx voltage regulator 78xx 79xx ic 78xx 431 sot89 TA7824S
Contextual Info: I Polarityj F1 Type No. Function TA7805S 5.7 TA7B06S 6 Input Voltage MAX. V Dropout Voltage TYP .iV l Quiescent Current TYP.(mA) Output Voltage Tolerance 2.0 4.2 ±4% Power dissipation (W) Package Equivalent 7 TA7808S Fixed output voltage 8 TA7809S High output current

2SA1145

Contextual Info: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)

"MARKING TE" US6

Abstract: 2301 mini transistor
Contextual Info: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment

2sa965

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

K2961

Contextual Info: T O S H IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2 S K2 9 61 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION • Low Drain-Source ON Resistance

2SC1627A

Contextual Info: 2SC1627A SILICON NPN EPITAXIAL TYPE PCT PROCESS U nit in mm DRIVER STAGE AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 W atts Amplifiers. M A X IM U M R ATING S (Ta = 25°C)

transistor 1127

Abstract: transistor 2sk2961
Contextual Info: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 5.1 M AX. APPLICATION • • • • Low Drain-Source ON Resistance : RüS(ON) = 0.20 (Typ.)

AAT3310

Abstract: regulator SOT-23 5 317 SO-8 317 6 pin sot23 TO-92M
Contextual Info: AAT3310 MicroPowerä ä Shunt Voltage Regulator Features The AAT3310 is a MicroPower shunt voltage regulator, ideal for battery powered applications where small size and low current are critical. This reference has an adjustable output voltage and a wide operating range of 15µA to 20mA.

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

2SA949

Contextual Info: TOSHIBA 2SA949 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SA949 Unit in mm DRIVER STAGE AUDIO AM PLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. • • • 5 1 MAX. High Breakdown Voltage : V£Eo = —150V Low Output Capacitance : Cob = 5.0pF Max.

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.

2SC2703

Contextual Info: 2SC2703 SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO POW ER AMPLIFIER APPLICATIONS. • U n it in m m H ig h DC C u rre n t G ain : h p E = 1 00~ 320 M A X IM U M RATINGS (T a = 2 5 °C ) C H A RA CTERISTIC SYM BOL RATING U N IT C ollector-B ase V oltage

2SA116

Contextual Info: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

A1680

Abstract: 2SA1680 2SC4408
Contextual Info: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)

C5122

Abstract: 2SC5122
Contextual Info: 2SC5122 東芝トランジスタ シリコンNPN三重拡散形 2SC5122 ○ 高電圧スイッチング用 単位: mm • 高耐圧です。 • 飽和電圧が低い。 : VCE sat = 0.4 V (標準) (IC = 20 mA, IB = 0.5 mA) : VCEO = 400 V 絶対最大定格 (Ta = 25°C)

c2705

Abstract: c2705 transistor 2sc2705 2SA1145 C2705 data
Contextual Info: 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2705 Audio Frequency Amplifier Applications Unit: mm • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145.

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)

c2236 transistor

Abstract: transistor C2236 C2236 NPN Transistor C2236 c2236 transistor equivalent C2236 Y 2SC2236 2SA966
Contextual Info: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

C2703

Abstract: 2SC2703
Contextual Info: 2SC2703 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2703 ○ 低周波電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 100~320 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

b1457

Abstract: B1457 transistor 2SB1457
Contextual Info: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)

c2230a

Abstract: C2230 2SC2230 2SC2230 GR 2SC2230A
Contextual Info: 2SC2230,2SC2230A 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2230,2SC2230A ○ 高耐圧一般増幅用 ○ カラーテレビ B 級音声出力用 • 単位: mm 高耐圧です。: VCEO = 180 V (2SC2230A) 絶対最大定格 (Ta = 25°C)

transistor c4408

Abstract: c4408 c4408 transistor 2SA1680 2SC4408
Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW