2SA1160 Search Results

2SA116

Contextual Info: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

Contextual Info: 2SA1160 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 160 Unit in mm STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • 5.1 MAX High DC Current Gain and Excellent hFE Linearity : hFE(l) = 140-600 (Vc e = - I V , Ic= -0 .5 A )

2SA1160

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage

2SA1160

Abstract: A1160
Contextual Info: 2SA1160 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1160 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線が良好です。 : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (最小)120 (標準) (VCE = −1 V, IC = −4 A)

Contextual Info: 2SA1160 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. M E D IU M PO W ER AM PLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hp-g Linearity : hpE(l) = 140—600 (V c e = - I V , l £ = —0.5A) : hpg(2) =60 (M in.), 120 (Typ.) ( V q e = - IV , I c = -4 A )

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 ＴＯ－９２ＭＯＤ TRANSISTOR（ PNP ） 1.EMITTER FEATURE Power dissipation PCM : 0.9 W（Tamb=25℃） Collector current ICM: -2A Collector-base voltage

2SA1160

Abstract: A1160
Contextual Info: 2SA1160 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1160 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線が良好です。 : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (最小)120 (標準) (VCE = −1 V, IC = −4 A)

2SA1160

Abstract: A1160
Contextual Info: 2SA1160 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 160 STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. U nit in mm 5.1 MAX • High DC Current Gain and Excellent hjrg Linearity : hFE(l) = 140-600 (VC E = - I V , I c = - 0 .5 A )

transistor A1160

Abstract: 2SA1160 A1160
Contextual Info: 2SA1160 TO SH IBA 2 S A 1 160 STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm >.1 MAX • • 8.2MAX. MEDIUM POWER AMPLIFIER APPLICATIONS High DC Current Gain and Excellent hEE Linearity : hFE(1) = 140-600 (VCE= - I V , IC= -0 .5 A )

2SA1160

Contextual Info: Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V

transistor A1160

Abstract: 2SA1160 A1160 25j1A
Contextual Info: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

2SA1161

Abstract: TO-202MOD 2SA1198 2SA1209 2SA1156 2SA1160 2SA1163 2SA1173 2SA1182 2Sa1206
Contextual Info: - 24 - Ta=25cC f t f c Ê f ë <Ta=25‘ C . * E P ( Í T c = 2 5 ,C ) m £ ft ffl £ 2SA1156 HV HS PSW 2SA1160 iâ V c BO VcEO (V) (V) Ice DC) Pc Pc* (A) (W) (W) leßo (max) Iß Pi) v’ cB (V) ,hF E (max) (min) V cE Ic/ I e (V) (A) [*Ef][àtyp1ÎÉ] VcE(sat

Contextual Info: 2SA1160 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● Power dissipation PCM: 0.9 W Tamb=25℃ ● Collector current ICM: -2 A ● Collector-base voltage V(BR)CBO: -20 V

transistor A1160

Abstract: 2SA1160 A1160
Contextual Info: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

2SB1013

Abstract: 2SA934 2sb1370 nec 1026 2S897 2SB1067 2SD2238 2SA1243 2SB1041 2SB564
Contextual Info: 60 - $! tt « Type No. 2SB 1013 v 2SB 1014 ^ 2S8 1015 - 2SB 1016 , 2SB 1017 2SB 1018 2SB 1019 « Manuf. -_ 3IC SANYO H. S S TOSHIBA b m NEC ±L HITACHI m ± FU JITSU i3 T fc' MATSUSHITA = m M IT SU B ISH I □ - Jx ROHM 2SA1160 2SB1068 2SB976 2SB1426 2SA1020

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO – 92M TO – 92M TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SA1160 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

transistor A1160

Abstract: A1160 2SA1160
Contextual Info: 2SA1160 TO SH IBA 2 S A 1 160 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • • 5.1 MAX High DC Current Gain and Excellent hjpg Linearity : hFE(l) = 140-600 (Vc e = - 1V> Ic = -0.5A )

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y

Contextual Info: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

2SA1160

Contextual Info: 2SA1160 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

Contextual Info: T O SH IB A 2SA1160 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 160 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • U nit in mm 5.1 M AX High DC C urrent Gain and Excellent hpE Linearity : h p E (l) = 140"-600 (V c e = —IV , I ç = —0.5A)

2Sj72

Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
Contextual Info: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)