TO92NL Search Results

panasonic SH-D

Abstract: Intelligent Power Devices "Intelligent Power Device"
Contextual Info: Panasonic Intelligent Power Devices IPDs MIP504 S ilicon M OS 1C • Features . + Unit : mm 5 0 0 .2 • 3-pin intelligent power device • Five protective functions (over-current, over-voltage, load-shorting, over heat, ESD) built-in • Usable for both AC and DC power supply

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 78LXXM LINEAR INTEGRATED CIRCUIT 3-TERMINAL 0.2A POSITIVE VOLTAGE REGULATOR 1 TO-92 SOP-8 „ DESCRIPTION The UTC 78LXXM family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that required

pswt

Abstract: MJE13003 TO-92 NPN Transistor 1.5A 700V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

2sc232a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER „ FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A „ ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free

UTC78L08M

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 78LXXM LINEAR INTEGRATED CIRCUIT 3-TERMINAL 0.2A POSITIVE VOLTAGE REGULATOR 1 TO-92 SOP-8 „ DESCRIPTION The UTC 78LXXM family is monolithic fixed voltage regulator integrated circuit. They are suitable for applications that required

2sb772

Abstract: 2SB772L 2SB772L TO-92NL T6C transistor 2SB772 TO-252 2SB772 TO-126 2SB772 TO-251 POWER AND MEDIUM POWER TRANSISTOR 2SB772 2SB772 TRANSISTOR Transistor 2sb772
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB772 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 TO-126 DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 TO-126C

2sa928a

Abstract: 2SC2328A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER „ FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A 1 TO-92NL „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free

2SD1875

Abstract: 2Sd-1875
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION

"Intelligent Power Devices"

Abstract: Intelligent Power Devices MIP501 MIP502
Contextual Info: Panasonic Intelligent Power Devices IPDs M IP 5 0 1 , M IP502 Silicon M OS IC Unit : mm • Features • High breakdown voltage, N-Ch MOS FET output (V dss > 40V Ron < 0.5 il) • Over-current-protection function built-in • Reset function built-in • Direct drive possible by the logic circuit

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER „ FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A „ ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2SB1288

Contextual Info: Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features ■ Absolute Maximum Ratings 0.7±0.1 0.7±0.2 ● Low collector to emitter saturation voltage VCE sat .

2SB1297

Abstract: 2SD1937
Contextual Info: Transistor 2SB1297 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD1937 Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –120 V Collector to emitter voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8551 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 1 „ TO-92 DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

Contextual Info: Transistor 2SA1534, 2SA1534A Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC3940 and 2SC3940A Unit: mm 5.0±0.2 4.0±0.2 • Absolute Maximum Ratings Ta=25˚C Symbol Collector to 2SA1534

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC3941 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SA1858 4.0±0.2 Unit: mm 8.0±0.2 5.0±0.2

2SB1221

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1221 Silicon PNP epitaxial planar type For general amplification Unit: mm 5.0±0.2 4.0±0.2 8.0±0.2 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC4208, 2SC4208A Silicon NPN epitaxial planar type Unit: mm 5.0±0.2 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) 2SC4208 Symbol Rating Unit