2SA1620 Search Results

SA1673

Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
Contextual Info: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668

Contextual Info: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80

Contextual Info: 2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4209 Driver Stage Amplifier Applications Voltage Amplifier Applications • Unit: mm Complementary to 2SA1620 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA1620

Abstract: 2SC4209
Contextual Info: 2SA1620 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1620 ○ 励振段増幅用 ○ 電圧増幅用 • 単位: mm 2SC4209 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定

2SA1620

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4209 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS. VOLTAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA1620. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage vCBO 80 V Collector-Emitter Voltage

Contextual Info: 2SA1620 T O SH IB A 2 S A 1 620 TO SH IBA TRANSISTO R SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AU DIO FREQ U ENCY AM PLIFIER APPLICATIO N S + 0.5 2.5 - 0 .3 Complementary to 2SC4209 MAXIM UM RATINGS (Ta = + 0.25 1 .5 - 0 .1 5 , 25°C) SYMBOL CHARACTERISTIC

2SA1620

Abstract: 2SC4209
Contextual Info: TO SH IBA 2SC4209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4209 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • + 0.5 2 .5 -0 .3 Complementary to 2SA1620 I- MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: TO SH IB A 2SC4209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4209 DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • Complementary to 2SA1620 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

2SA1620

Abstract: 2SC4209
Contextual Info: 2SC4209 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4209 ○ 励振段増幅用 ○ 電圧増幅用 • 単位: mm 2SA1620 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定

2SA1620

Abstract: 2SC4209
Contextual Info: TOSHIBA 2SC4209 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4209 Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS • + 0.5 Complementary to 2SA1620 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SA1620

Abstract: 2SC4209
Contextual Info: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80

2SA1620

Abstract: 2SC4209
Contextual Info: 2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4209 Driver Stage Amplifier Applications Voltage Amplifier Applications • Unit: mm Complementary to 2SA1620 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80

toshiba l40

Abstract: 2SA1620 2SC4209 A1620
Contextual Info: 2SA1620 TO SH IBA 2 S A 1 620 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • + 0.5 2 .5 -0 .3 Complementary to 2SC4209 + 0.25 k 1-5 - ° - 15>i I- MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

Contextual Info: TOSHIBA 2SA1620 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 SA 1 6 2 Q AUDIO FREQUENCY AMPLIFIER APPLICATIONS U nit in mm ELECTRICAL CHARACTERISTICS rTa = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ÏCBO VCB = - 5 0 V , IE = 0

Contextual Info: 2SA1620 SILICON PNP EPITAXIAL TYPE Unit in mm +0.5 AUDIO FREQUENCY AMPLIFIER APPLICATIONS. • Complementary to 2SC4209 Ta=25°C CHARACTERISTIC C o lle c to r-B a s e V o ltage C o lle c to r - E m itte r V o ltage E m itte r-B ase V oltage C o lle c to r C u rren t

Contextual Info: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SC4209 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80

2SC4209

Abstract: 2SA1620
Contextual Info: 2SC4209 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4209 Driver Stage Amplifier Applications Voltage Amplifier Applications • Unit: mm Complementary to 2SA1620 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SA1620

Abstract: 2SC4209
Contextual Info: 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1620 Audio Frequency Amplifier Applications • Unit: mm Complementary to 2SC4209 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

lm2804

Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs