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    TOHO ELECTRONICS INC Search Results

    TOHO ELECTRONICS INC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    TOHO ELECTRONICS INC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HY51V65173HGJ-45/5/6I HY51V65173HGT-45/5/6I 4M x 16Bit EDO DRAM ET Part PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extented Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time 45ns or 50ns and refresh cycle(4K ref) and power consumption(Normal


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    PDF HY51V65173HGJ-45/5/6I HY51V65173HGT-45/5/6I 16Bit 64Mbit

    TAF200

    Abstract: sendust tdk ferrite cores for smps iron eddy current hysteresis loss micrometals Arnold Magnetics 75H-TAF200 75-TAF200 dimmer chokes iron core transformer
    Text: Powder Cores / Distributed Gaped Core Selection Guide Introduction This application guide presents some general guidelines for the optimum choice of powder core materials MPP, Sendust/Kool Mu1, High Flux or Iron Powder for different inductor, choke and filter design requirements. The choice of one


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    PDF 75-TAF200 TAF200 sendust tdk ferrite cores for smps iron eddy current hysteresis loss micrometals Arnold Magnetics 75H-TAF200 dimmer chokes iron core transformer

    HK-12S120-1010

    Abstract: kze capacitor HK-12S120 A1060-11 A1060 thyristor control circuit diagram variable capacitor A106011
    Text: TN8D41A Ordering number : ENA1060 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) TN8D41A Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN8D41A ENA1060 A1060-11/11 HK-12S120-1010 kze capacitor HK-12S120 A1060-11 A1060 thyristor control circuit diagram variable capacitor A106011

    A1029

    Abstract: kze capacitor sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor
    Text: TN5D41A Ordering number : ENA1029 SANYO Semiconductors DATA SHEET TN5D41A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN5D41A ENA1029 A1029-11/11 A1029 kze capacitor sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor

    Untitled

    Abstract: No abstract text available
    Text: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN8D51A ENA0985 A0985-11/11

    switching regulator 12v

    Abstract: matsushita film capacitor ECQ SBT250-06J TN5D51 2200uf 3A capacitor capacitor 2200uf 35v 2200uF 100v capacitor Nippon Chemi-Con kze capacitor electrolytic capacitor 2200uF SANYO
    Text: TN5D51 Ordering number : ENA0865 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN5D51 Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ).


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    PDF TN5D51 ENA0865 A0865-11/11 switching regulator 12v matsushita film capacitor ECQ SBT250-06J TN5D51 2200uf 3A capacitor capacitor 2200uf 35v 2200uF 100v capacitor Nippon Chemi-Con kze capacitor electrolytic capacitor 2200uF SANYO

    tn8d51a

    Abstract: HK-12S120-1010 switching regulator 12v nippon kze 2wl1 IT1326
    Text: TN8D51A Ordering number : ENA0985 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN8D51A Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN8D51A ENA0985 A0985-11/11 tn8d51a HK-12S120-1010 switching regulator 12v nippon kze 2wl1 IT1326

    Untitled

    Abstract: No abstract text available
    Text: HY51V S 16400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY ESCRIPTION The HY51V(S)16400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)16400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)16400HG/HGL offers Fast Page Mode as a high


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    PDF HY51V 16400HG/HGL 16400HG/HGL

    FILM CAPACITOR 0.1/10/100

    Abstract: kze capacitor matsushita film capacitor ECQ 10s100 switching regulator 12v sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor Nippon Chemi-Con kze capacitor
    Text: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN5D51A ENA1031 A1031-11/11 FILM CAPACITOR 0.1/10/100 kze capacitor matsushita film capacitor ECQ 10s100 switching regulator 12v sanyo electrolytic capacitor thyristor control circuit diagram variable capacitor Nippon Chemi-Con kze capacitor

    Untitled

    Abstract: No abstract text available
    Text: TN5D41A Ordering number : ENA1029 SANYO Semiconductors DATA SHEET TN5D41A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN5D41A ENA1029 A1029-11/11

    kze capacitor

    Abstract: thyristor 5a THYRISTOR PRODUCT CATALOG TN5D61A FILM CAPACITOR 0.1/10/100 sanyo electrolytic capacitor Schottky Diode 40V 5A thyristor control circuit diagram
    Text: TN5D61A Ordering number : ENA1240 SANYO Semiconductors DATA SHEET TN5D61A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (24V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN5D61A ENA1240 A1240-11/11 kze capacitor thyristor 5a THYRISTOR PRODUCT CATALOG TN5D61A FILM CAPACITOR 0.1/10/100 sanyo electrolytic capacitor Schottky Diode 40V 5A thyristor control circuit diagram

    capacitor 2200uf 35v

    Abstract: electrolytic capacitor 2200uF SANYO Nippon Chemi-Con kze capacitor film capacitor 0.1uf 100v nippon kmg capacitor 2200uF/35V switching regulator 12v mosfet protection circuit diagram nippon kze HK-12S120-1010
    Text: TN7D51 Ordering number : ENA0866 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN7D51 Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 80mΩ).


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    PDF TN7D51 ENA0866 A0866-11/11 capacitor 2200uf 35v electrolytic capacitor 2200uF SANYO Nippon Chemi-Con kze capacitor film capacitor 0.1uf 100v nippon kmg capacitor 2200uF/35V switching regulator 12v mosfet protection circuit diagram nippon kze HK-12S120-1010

    matsushita resistor network

    Abstract: No abstract text available
    Text: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (Variable Output Type) TN5D01A Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN5D01A ENA1446 A1446-11/11 matsushita resistor network

    Untitled

    Abstract: No abstract text available
    Text: HY51V S 17400HG/HGL 4M x 4Bit Fast Page DRAM PRELIMINARY DESCRIPTION The HY51V(S)17400HG/HGL is the new generation dynamic RAM organized 4,194,304 words x 4bit. HY51V(S)17400HG/HGL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The HY51V(S)17400HG/HGL offers Fast Page Mode as a high


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    PDF HY51V 17400HG/HGL 17400HG/HGL

    kze capacitor

    Abstract: ELECTROLYTIC capacitor 3000 barrier network fuse Chemi-Con KZE thyristor regulator matsushita resistor network
    Text: TN5D01A Ordering number : ENA1446 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (Variable Output Type) TN5D01A Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN5D01A ENA1446 A1446-11/11 kze capacitor ELECTROLYTIC capacitor 3000 barrier network fuse Chemi-Con KZE thyristor regulator matsushita resistor network

    kze capacitor

    Abstract: matsushita film capacitor ECQ SBT250-06J TN5D41 2200uf 3A capacitor 2wl1 electrolytic capacitor 2200uF SANYO capacitor 2200uF/35V
    Text: TN5D41 Ordering number : ENA0863 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device TN5D41 Separately-Excited Step-Down Switching Regulator (5V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ).


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    PDF TN5D41 ENA0863 A0863-11/11 kze capacitor matsushita film capacitor ECQ SBT250-06J TN5D41 2200uf 3A capacitor 2wl1 electrolytic capacitor 2200uF SANYO capacitor 2200uF/35V

    Untitled

    Abstract: No abstract text available
    Text: TN8D41A Ordering number : ENA1060 SANYO Semiconductors DATA SHEET ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (5V Output type) TN8D41A Features • • • • • • High efficiency (ON resistance 80mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN8D41A ENA1060 A1060-11/11

    HY51V65803HG

    Abstract: No abstract text available
    Text: HY51V S 65803HG/HGL 8M x 8Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 8,388,608 x 8 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal


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    PDF HY51V 65803HG/HGL 64Mbit 400mil 32pin HY51V65803HG

    Untitled

    Abstract: No abstract text available
    Text: TN5D51A Ordering number : ENA1031 SANYO Semiconductors DATA SHEET TN5D51A ExPD Excellent-Performance Power & RF Device Separately-Excited Step-Down Switching Regulator (12V Output type) Features • • • • • • High efficiency (ON resistance 100mΩ, Vertical-type P-ch Power MOSFET).


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    PDF TN5D51A ENA1031 A1031-11/11

    D28C04

    Abstract: 6023B upd28c04 PD28C04
    Text: N E C ELECTRONI CS NEC INC blE D L.427525 DD3S417 NEC Electronics Inc. Description Pin Configuration The jl/PD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 512 x 8 bits and fabricated with an advanced


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    PDF DD3S417 uPD28C04 24-Pin /PD28C04 096-bit iPD28C04 /iPD28C04 D28C04 6023B PD28C04

    D28C05

    Abstract: AIPD28C05 fjs 500
    Text: N E C ELECTRONICS INC bl E T> • bM27S2S 003542b fk fM ä Y " MET * N E C E fiPD28C05 512 X 8-BIT CMOS EEPROM NEC Electronics Inc. 1 3 ' 2 ? Description Pin Configuration The fjPD28C05 is an electrically erasable and program­ mable read-only memory EEPROM organized as 512


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    PDF bM27S2S 003542b uPD28C05 fjPD28C05 PD28C05 24-pin ConfM27S D03543 iPD28C05 MIH-62248 D28C05 AIPD28C05 fjs 500

    6023B

    Abstract: PD28C04 ho27a
    Text: NEC JJPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿jPD28C04 is a 4,096-bit e le ctrica lly erasable and program m able read-only m em ory EEPROM orga­ nized as 512 x 8 bits and fab ricated w ith an advanced CMOS process for high perform ance and low power


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    PDF uPD28C04 24-Pin jPD28C04 096-bit D28C04 pPD28C04 6023B PD28C04 ho27a

    KM416C64

    Abstract: No abstract text available
    Text: KM416C64 CMOS DRAM 6 4 K x 1 6 B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 65,536 x 16 bit Extended Date Out CMOS DRAMs. Extended Date Out Mode offers high speed random access of memory cells within the same row. Access time 55, 60 or 70 , power consumption


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    PDF KM416C64 64Kx16 KM416C64/L KM416C64

    Untitled

    Abstract: No abstract text available
    Text: Chopper Regulators PQtCF2 PQ1CF2 TO-220 Type Chopper Regulator • Features ■ Outline Dimensions U n it. m m • • • • Maximum switching current: 1.5A Built-in ON/OFF control function Built-in soft start function Built-in oscillation circuit (oscillation frequency:TYP.100kHz)


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    PDF O-220 100kHz) to-30V)