TOP MARKING 6701 Search Results

CDMA450

Abstract: marking 6701
Contextual Info: SAW Bandpass Filter F4811 Features z RF bandpass filter for CDMA450 F-Band Tx. Part z Usable bandwidth 5MHz 479 MHz ~ 484 MHz z High attenuation z No matching 50Ω single-ended operation z Ceramic Surface Mounted Device Package ( 3.8 mm x 3.8 mm ) z RoHS compliant

SR52

Abstract: FY618 SR-52
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

SMD MARKING CODE AADV

Abstract: marking SR5 SMD MT28F1284W18 AADV
Contextual Info: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation

MT28F1284W18

Abstract: smd codes marking A21 FY618
Contextual Info: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for fast PROGRAM

FY618

Abstract: FY617
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

FX109

Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

SR52 W 18

Abstract: FX118 transistor marking A21 FY114 Fw*118 fw104 intel marking 28f intel package marking w18 marking PBA marking W18
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

FX119

Abstract: FX117
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

FY-103

Abstract: 770MAX
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

smd transistor bq

Abstract: A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

DSA0044716

Abstract: SR-52
Contextual Info: PRELIMINARY‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 MT28F644W18 1.8V Low Voltage, Extended Temperature Features • • • • • • • • • • • • • • • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multi-partition architecture

FX110

Abstract: FX108
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 1.8V Low Voltage, Extended Temperature Features Ball Assignment 56-Ball VFBGA • Flexible 4Mb multi-partition architecture • Single word 16-bit data bus Support for true concurrent operation with zero

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11027-1E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422E-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11023-2E MEMORY CMOS 2 x 2 M × 4 BITS SYNCHRONOUS DYNAMIC RAM MB81117422A-125/-100/-84/-67 CMOS 2 BANKS OF 2,097,152-WORD × 4 BITS SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81117422A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for

FY849

Abstract: FW843 FW842 FW84 FY848 SR-52
Contextual Info: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L18 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for

FW863

Abstract: FX861 smd marking H6
Contextual Info: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for

Contextual Info: April 2008 HYB25D128160C[E/T] HYB25D128400C[C/E/T] HYB25D128800C[C/E/F/T] 128-Mbit Double-Data-Rate SDRAM DDR SDRAM Internet Data Sheet Rev. 1.70 Internet Data Sheet HYB25D128[40/80/16]0C[C/E/F/T] 128-Mbit Double-Data-Rate SDRAM Revision History: Rev. 1.70, 2008-04

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11043-2E MEMORY CMOS 2 x 2 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F16422D-102L/-103L/-10L CMOS 2-Bank × 2,097,152-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F16422D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11038-2E MEMORY CMOS 2 x 2 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F16422B-75/-102/-103 CMOS 2-Bank × 2,097,152-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F16422B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

MB81F161622B-102

Abstract: MB81F161622B-75
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11039-2E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-103 CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11044-2E MEMORY CMOS 2 x 1 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F16822D-102L/-103L/-10L CMOS 2-Bank × 1,048,576-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F16822D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

F9901

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11039-4E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

FX546

Contextual Info: ADVANCE‡ 2 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F322D20 MT28F322D18 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES BALL ASSIGNMENT 58-Ball FBGA • Flexible dual-bank architecture – Support for true concurrent operation with zero