TOSHIBA BIPOLAR POWER TRANSISTOR Search Results

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

Contextual Info: TOSHIBA MP6301 TOSHIBA POWER TRANSISTOR MODULE SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 6 IN 1 MP6301 HIGH POWER SWITCHING APPLICATIONS. 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. INDUSTRIAL APPLICATIONS Small Package by Full Molding (SEP 12 Pin)

SMD TRANSISTOR H2A NPN

Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Contextual Info: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

GT25H101

Abstract: GT25H Opto Speed SA
Contextual Info: TOSHIBA {DIS CR ETE/O PT O! 90D 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E_| ciO,:17BSD D D l b l ñ ? TD SEMICONDUCTOR 16187 1 D T - 3 3 ' ^ 3 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25H101 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.

MN3005

Contextual Info: GT15J102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR f 'W i • T ■ iM r vm ■m SILICON N-CHANNEL IGBT w ? Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 10 + 0.3 Collector Current Collector Power Dissipation Tc = 25°C

Contextual Info: GT30J301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT3QJ3Q1 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed ; tf=0t30/¿s Max, Low Saturation Voltage : Vq e (sat)~^.7V (Max.)

Contextual Info: TOSHIBA Preliminary GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT30J324 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS

GT20J321

Abstract: 600V 20A 50KHz
Contextual Info: TOSHIBA Preliminary GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS

Contextual Info: TOSHIBA Preliminary GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT50J325 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS

G6811

Contextual Info: TOSHIBA Preliminary GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS

gt10j321

Contextual Info: TOSHIBA Preliminary GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT10J321 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS

Contextual Info: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)

TA75358

Abstract: 2SA1203 2SC2883 SSOP24 TA8461F
Contextual Info: TOSHIBA TA8461F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT MULTI-CHIP TA8461F DUAL POWER OPERATIONAL AMPLIFIER The TA8461F is a multiple chip IC consisting of 4 saturated voltage discrete transistors and 1 dual operational amplifier. FEATURES • Large Output Current

rm5 relay

Contextual Info: TOSHIBA TA8225H/L TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8225H, TA8225L 45W BTL AUDIO AMPLIFIER The TA8225H, TA8225L is BTL audio power amplifier for consumer application. It is designed for high power, low distortion and low noise.

TA8225

Abstract: TA8225H TA8225L HZIP17-P-2 45W BTL HSIP17-P-2 45W Audio amplifier
Contextual Info: TOSHIBA TA8225H/L TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8225H, TA8225L 45W BTL AUDIO AMPLIFIER The TA8225H, TA8225L is BTL audio power amplifier for consumer application. It is designed for high power, low distortion and low noise.

Contextual Info: TOSHIBA TA8225H/L TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8225H, TA8225L 45W BTL AUDIO AMPLIFIER The TA8225H, TA8225L is BTL audio power amplifier for consumer application. It is designed for high power, low distortion and low noise.

GT10Q301

Contextual Info: TOSHIBA GT10Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)

GT30J301

Contextual Info: GT30J301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30;i*s Max. Low Saturation Voltage : V qe (sat)~^.7V (Max.)

GT25H101

Abstract: 1NSULAT 158KA OOLB
Contextual Info: TOSHIBA {DISCRETE/OPTO} TO SH IBA D * T ' 3 3 ' I 3 . 90D 1 61 87 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR G T 2 5 H 1 0 1 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. HOTOR CONTROL APPLICATIONS.

toshiba gt20d201

Abstract: GT20D201
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SEMICONDUCTOR TOSHIBA TECHNICAL GT20D201 DATA SILICON P CHANNEL TYPE GT20D201 Unit in mm HIGH POWER AMPLIFIER APPLICATION. • • • • High Breakdown Voltage : VGEg = —250V (MIN.) High Forward Transfer Admittance : |Yfe| = 10S (TYP.)

GT15Q301

Contextual Info: TOSHIBA GT15Q301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15Q301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf = 0.32 jus Max. Low Saturation Voltage : V qe (sa^) = 2.7 V (Max.)

Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD

TA31272FN

Abstract: DRFM SSOP24
Contextual Info: TOSHIBA TA31272FN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA31272FN ASK/FSK RF/IF DETECTOR IC FOR LOW POWER WIRELESS SYSTEM TA31272FN is a 2-level frequency-shift keying/amplitudeshift keying compatible RF/IF detector IC for low power

Contextual Info: GT20J301 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT20J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf=0.30//s Max. Low Saturation Voltage : V c e (sat) = 2-^^ (Max.)