TOSHIBA IGBT MG150J1BS11 Search Results

MG150J1BS11

Abstract: TOSHIBA IGBT TOSHIBA IGBT MG150J1BS11
Contextual Info: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

mg150j

Abstract: TOSHIBA IGBT MG150J1BS11
Contextual Info: MG150J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J1BS11 High Power Switching Applications Motor Control Applications Unit: mm l Enhancement-mode l The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG150J1BS11

Contextual Info: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG150J1BS11 Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf^l.O/^s Max. (Iç; = 150A) Low Saturation Voltage : (sat) -2.7V (Max.) (Iç; = 150A)

Contextual Info: TOSHIBA MG150J1BS11 TOSHIBA GTR MODULE m •v ■ SILICON N CHANNEL IGBT r; 1 ^ n 1 1 'w ■ v v ■ r nar <; 1 1 v ■ ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0^s Max. (Iç = i50A) Low Saturation Voltage ; V q e (sat) = 2,7V (Max,) (Iq = 150A)

MG75J2YS40

Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Contextual Info: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

Contextual Info: TO SHIBA MG150J1BS11 M G 15 0 J 1 B S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0,«s Max. (Ie = 150A) Low Saturation Voltage : V q e (sat) = 2.7V (Max.) (Iq = 150A)

Contextual Info: T O SH IB A MG150J1BS11 M G 15 0 J 1 B S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=1.0,«s Max. (Ie = 150A) Low Saturation Voltage : V qe (sat) = 2.7V (Max.) (Iq = 150A)

Contextual Info: TOSHIBA M G150J1BS11 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG1 5 0 J 1 B S 1 1 HIGH PO W E R SWITCHING APPLICATIONS U n it : M O TO R CONTROL APPLICATIONS H igh In p u t Im pedance H igh Speed : tf= 1 .0 ,u s M ax. ( I c = 150A) Low S a tu ra tio n V o ltag e : V ^ E (sat) = 2 -7V (M ax.) (Ic = 150A)

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction