TP060 Search Results

Contextual Info: TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TP0604

Contextual Info: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown

Contextual Info: TP0606 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) ^GS(th) Order Num ber / Package b v dgs (max) (min) (max) TO-92 -60V 3.5Î2 -1.5A -2.4V TP0606N3 Features □ Low threshold — 2.4V max

FAST DMOS FET Switches

Abstract: TP0606N7 TP0606N6 DMOS FET P-Channel Enhancement Mode Vertical DMOS FET FAST DMOS FET Switches p-CHANNEL mos die MOS FET Array p-channel DMOS Photo MOS Relay
Contextual Info: TP0606N6 TP0606N7 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) -60V 3.5Ω Order Number / Package 14-Pin P-Dip 14-Pin C-Dip* TP0606N6 TP0606N7 * 14 pin side brazed ceramic DIP Advanced DMOS Technology

SOW-20

Abstract: TP0604 TP0604N3 TP0604WG low vgs mosfet to-92
Contextual Info: TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) -40V 2.0Ω -2.0A -2.4V Order Number / Package TO-92 SOW-20* TP0604N3 TP0604WG * Same as SO-20 with 300 mil wide body.

Contextual Info: TP0606N6 Transistors P-Channel Enhancement Mode MOSFET Array Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)650m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.5 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)3.0 Minimum Operating Temp (øC)-55

Contextual Info: TP0606N2 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)1.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)4.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)6.0 Minimum Operating Temp (øC)-55

TP0606N5

Contextual Info: TP0606 TP0610 S u p e r t e x in c . Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs If Ordering Information Order Num ber / Package B W B V jx -s ^DS ON ^GS(lh) (max) (max) TO-39 TO-92 TO-220 -60V 3 .5 ft -1.5A -2.4V — TP0606N3 TP0606N5 -100V

TP0602N3

Abstract: TR0602 TP0604N2
Contextual Info: ^Supertex inc. TP0602 T P 06 04 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package B V oss / R d S ON B V dgs (m ax) (min) (max) TO-39 TO-92 SOW-20* DICE* -20V 2.0£2 -2.0A -2.4V TP0602N2 TP0602N3 —

SOW-20

Contextual Info: TP0604WG LJì Supertex inc. S u rfa ce M o un t L ow T h r e s h o ld P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information_ B V */ R ds <o n M a x Order Number / Package 2 .0 Q TP0604W G SOW-20* V DGS -4 0V * Same as SO-20 with 300 mil wide body.

Contextual Info: TP0604 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BV dss / R ds on Max Order Num ber / Package SOW -20* b v dgs -40V 2.0Î2 TP0604W G * Same as S0-20 with 300 mil wide body. Features Advanced DMOS Technology

TP0604

Contextual Info: Supertex inc. TP0604 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 55 55 11 ± 1.5 Au 1 (mils) TP0604 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

TP0606N3-G

Contextual Info: Supertex inc. TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold -2.4V max. High input impedance Low input capacitance (80pF typ.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

tp0604

Contextual Info: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TP0606N5

Abstract: TP0610N3 TP0610N2 TP0606 TP0606N2 TP0606N3 TP0606N6 TP0610 TP0610N5 Tp0606N7
Contextual Info: TP0606 TP0610 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON BVDGS (max) Order Number / Package ID(ON) (min) VGS(th) (max) TO-39 TO-92 TO-220 Quad P-DIP Quad C-DIP* DICE† -60V 3.5Ω -1.5A -2.4V TP0606N2

SOW-20

Abstract: TP0604WG
Contextual Info: TP0604WG Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels

SITP

Abstract: Tp0606 TP0606N3-G
Contextual Info: TP0606 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

SITP

Abstract: TP0604 TP0604N3 SOW MARKING
Contextual Info: TP0604 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Low threshold -2.4V max. High input impedance Low input capacitance (95pF typical) Fast switching speeds Low on-resistance Free from secondary breakdown

TP0606

Abstract: TP0606N3
Contextual Info: TP0606 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package -60V 3.5Ω -1.5A -2.4V TP0606N3 TO-92 Features Low Threshold DMOS Technology ❏ Low threshold — -2.4V max

capacitor 333J

Abstract: 823j capacitor 563j capacitor capacitor 104J 100 104j capacitor capacitor 473j 473J capacitor 473j 100 823j a 473j
Contextual Info: _PREMQ TP0602 662, 17S 6.6x2.3x1.75 mm RFID Transponder Inductors Micro SMD Hard Ferrite Transponder Inductor 10.8 mH-2.38 mH Features Dimensions TP0602 Series of Surface Mountable ferrite wound inductor is a small transponder solution for automotive

Contextual Info: ^ Super t e x inc. TP0604WG Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS/ BV RDS ON Max Order Number / Package SOW-20* dgs -40V 2.0£2 TP0604WG * Sam e as S O-20 with 300 mil wide body. Features Advanced DMOS Technology

capacitor 104J 100

Abstract: 104j capacitor 104j capacitor value 125khz Transponder Inductor 104j capacitor datasheet 823j capacitor 104J value of capacitor 124j capacitor inductor coil for transponder automotive 104J value
Contextual Info: TP0602 6.6x2.3x1.75 mm 2.38 mH - 10.8 mH Single Axis Transponder Inductors Micro SMD Hard Ferrite Transponder Inductor Dimensions Features The TP0602 Series of Surface Mountable ferrite wound inductor is a small transponder solution for automotive applications like TPMS,Keyless Go and

TP0606N7

Contextual Info: TP0606N6 TP0606N7 Çh Super te x inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVdss / BVdgs RdS ON (max) -60V 3.5£2 Order Number / Package 14-Pin P-Dip 14-Pin C-Dip* TP0606N6 TP0606N7 14 pin side brazed ceramic DIP

SOW-20

Abstract: TP0604 TP0604WG
Contextual Info: TP0604 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON Max -40V 2.0Ω Order Number / Package SOW-20* TP0604WG * Same as SO-20 with 300 mil wide body. Advanced DMOS Technology Features 4 independent channels