TPCE Search Results

Contextual Info: CFA3680A CFA3680A 29368 GENERAL DESCRIPTION: AM29368 1-MEGABIT DRAM CONTROLLER CFA3680A is designed to be fully compatible functionally with the AMD AM29368 DRAM controller. ItiscompatibleinI/Osalso,exceptforthefollowing: 1. The extra input, TPCEN, isadded to enable counting of the internal column and bank counters with the

th50vsf1400

Abstract: BA30
Contextual Info: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory

npn phototransistor package

Contextual Info: SIEMENS BP 103 SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm FEATURES Maximum Ratings • • • • • • • • • Operating and Storage Temperature Range Hop, Tstg) . -4 0° to +80°C Soldering Temperature (¿2 mm from case bottom)

Contextual Info: 32bit TX System RISC TX19 family TMP1942FDU/XBG Rev1.0 March 29, 2007 TMP1942FD 32-Bit RISC Microprocessor TX19 Family TMP1942FDU/FDXBG 1. Features The TX19 is a family of high-performance 32-bit microprocessors that offers the speed of a 32-bit RISC solution with the added advantage of a significantly reduced code size of a 16-bit architecture.

Contextual Info: SERIES 2+ FLASH MEMORY CARDS 4-, 8-, 20- AND 40 MEGABYTES ÌM C004FLSP, ÌM C008FLSP, ÌM C020FLSP, ÌM C040FLSP • Revolutionary Architecture — Pipelined Command Execution — Write during Erase — Series 2 Command Super-Set 150 ns Maximum Access Time with 5 V

pir 815

Contextual Info: PRELIMINARY & Am79C930 Advanced Micro Devices PCnet -Mobile Single Chip Wireless LAN Media Access Controller DISTINCTIVE CHARACTERISTICS • Capable of supporting the IEEE 802.11 standard draft ■ Supports the Xircom Netwave™ Media Access Control (MAC) protocols

a19t

Abstract: ba1s 000IH
Contextual Info: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

170H

Abstract: 200H 400H HB28D032A8HSR HB28D096A8HSR
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

P-TFBGA63-0911-0

Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
Contextual Info: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory

170H

Abstract: 200H 400H HB28D032C6 HB28D096C6 DSA003633
Contextual Info: HB28D096C6/HB28D032C6 CompactFlash 96 MByte/32 MByte ADE-203-1291A Z Rev. 1.0 Jan. 22, 2002 Description HB28D096C6, HB28D032C6 are CompactFlash™. This card complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for PC or any other electric equipment and

DE5600sas

Abstract: DE5600 intel ssd "read channel" hdd lsi l5520 10Krpm
Contextual Info: White Paper Microsoft SQL Server Online Transaction Optimization with LSI MegaRAID CacheCade™ Software Executive Summary This paper will illustrate the potential performance benefits of using LSI™ MegaRAID® CacheCade™ software for Microsoft SQL server environments.

NAND FLASH SAMSUNG

Abstract: 848a hs010 MARKING 016H
Contextual Info: Flash Cards ATA45 Series White Electronic Designs ATA45 Series FLASH CARDS 8MB to 512MB PRODUCT DESCRIPTION ATA45 series Flash ATA cards are built with NAND flash memory components operating as solid-state disk. They comply with the PC card ATA standard and are suitable for

Contextual Info: TO SHIBA TH 50VSF1420/1421AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRA M AND FLASH M EM O R Y M IXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216 bit flash memory. The SEA M is organized as 262,144 words by 8 bits and the flash memory

Contextual Info: TOSHIBA TH50VSF1302/1303AAXB TOSHIBA MULTI CHIP INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1302/1303AAXB is a package of mixed 2,097,152-bit SRAM and 8,388,608-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576

Contextual Info: TOSHIBA TENTATIVE TC58FVT008/B008FT-85,-10,-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8M 1 M X 8 BIT CMOS FLASH MEMORY DESCRIPTION The TC58FVT008/B008 is a 8,388,608 - bits, 3.0 Volt - only Electrically Erasable and Programmable Flash memory organized as 1,048,576 words X 8 bits. The TC58FVT008/B008 features commands for

Contextual Info: TO SHIBA TH 50VSF0400/0401AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF0400/0401AAXB is a package of mixed 1,048,576-bit SRAM and 16,777,216-bit FLASH memory. The SRAM and FLASH memory organized 131,072 words by 8 bits SRAM and 2,097,152

BA102

Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
Contextual Info: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.

SDP3BI

Abstract: SDCFB SDP3B SDCFBi usb flash drive circuit diagram sandisk SanDisk sdcfb 64 101 80 sandisk usb flash drive 16 gb Sandisk NAND Flash memory controller wear level SanDisk compactflash 64 mb sdcfb
Contextual Info: SanDisk Industrial Grade ATA —CompactFlash, PC Card, and FlashDrive— Product Manual Version 2.6 Document No. 80-36-00208 March 2004 SanDisk Corporation Corporate Headquarters • 140 Caspian Court • Sunnyvale, CA 94089 Phone 408 542-0500 • Fax (408) 542-0503

a19t

Abstract: TC58FVB160FT 1X16 D8000H-DFFFFH
Contextual Info: TOSHIBA TENTATIVE TC58FVT160/B160FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT160/B160 is a 16,777,216 - bit, 3.0-V read-only e lectrically erasable and program m able

1X16

Contextual Info: TOSHIBA TENTATIVE TC58FVT016/B016FT-85#-10#-12 T O SH IB A M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE C M O S 16 -M B IT 2 M X 8 BITS C M O S FLASH M E M O R Y DESCRIPTION The TC58FVT016/B016 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable

8a21

Abstract: ba1s F2480 A12F TH50VSF2480AASB TH50VSF2481AASB a19t
Contextual Info: SFP- TOSHIBA Multi Chip Package SRAM & FLASH Memory 4M BIT SRAM X 8/ X16 16M BIT FLASH ( X 8/X 16) Data Sheet TOSHIBA TH50VSF2480/2481AASB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION

Contextual Info: TO SHIBA TH 50VSF1420/1421AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF1420/1421AAXB is a package of mixed 2,097,152-bit SRAM and 16,777,216-bit FLASH memory. The SRAM and FLASH memory organized 262,144 words by 8 bits SRAM and 1,048,576

Contextual Info: TOSHIBA TH50VSF0320/0321BCXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH M EM O RY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH 50V SF0320/0321BCXB is a mixed containing a package 1,048,576-bit SRAM and a 8,388,608bit flash memory. The SRAM is organized as 131,072 words by 8 bits and the flash memory is

Contextual Info: TOSHIBA TENTATIVE TC58FVT004/B004FT-85#-10#-12 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 M 512 K X 8 BIT CMOS FLASH M EM O R Y DESCRIPTION The TC58FVT004/B004 is a 4,194,304 - bits, 3.0 Volt - only electrically erasable and programmable