TR/DIODE RK 306 Search Results

razoa

Abstract: abb razoa ASEA relay - RAKZB rakzb NT 101 ABB RELAY - RAAAM FTL 8-1 614-100E distance relay B03-7012E
Contextual Info: Info-Ng. | | | | fM / H U P aje* brown ss zer: ^ A T IO N R FR , May 1985 Edition 5 ^ K 61^30^ 7433 1 A BB Relays Distance relay type RAZO A o Three-phase switched distance relay of compact design o Three types of starting relays; - Underim pedance start using micro processors in the measur­

EA960

Abstract: EA961 elektronenrohren zehner "WF Berlin" WF Berlin
Contextual Info: ELEKTR O N E N R Ö H R E N EA 960 EA 961 EA 962* >> UKW-DIODEN für Meßzwecke — 75 — X TT I I io T S o ck e ls c h a lts c h e m a m ax. A b m e s s u n g e n TECHNISCHE DATEN H e izun g: Heizspannung Heizstrom Uf lf 6,3 125 V mA Betriebswerte: Diodenstromeinsatz

RK 723 007

Abstract: DIODE RK 306 SELECTOR SWITCH ASEA ABG RK 795 001-aa RK741 RK717 CATALOGUE SK 63-1 E ASEA ABG 10 RK795 RK70-10E
Contextual Info: C a ta lo g u e R K 70- 10E Edition 1 5930-09 Su persecTes calatog ues R K 7 M O E RK 74-1OE and R K 7 8 -2 E Relay accessories Pushbuttons Component blocks ASEA T h e re lay accesso ries a re used to provide a relay, protective relay or other equip m en t, with

Contextual Info: DFB54 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4219 - 2.4 Supersedes Septem ber 1996 version, DS4219 - 2.3 KEY PARAMETERS v RRM 3500V 2135A Jf AV 20000A FSM 1500|lC Q r APPLICATIONS • Pow er Supplies. ■ Freewheel Diode. ■ Battery C hargers. ■

DIODE RK 306

Abstract: tr/DIODE RK 306
Contextual Info: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.

Contextual Info: @ M ITEL DS2103SY Rectifier Diode S E M IC O N D U C T O R Supersedes July 1997 version, DS4172 - 3.1 DS4172 - 3.2 KEY PARAMETERS VRRM 2600V IF av, 4785A 'fs m 81000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.

relay ras 1210

Abstract: asea RRME rrmh2 ASEA RMA16 RRMH RRME 1608 rrMH 2-107 MX 0842 RRMH ASEA rrme1
Contextual Info: R K Ii E AUXILIARY RELAYS , . -v lp f f ig g , • several designs > ; .< -,v . • " : ^ • ¿ 5 | 8 ly • heavy-current design • plug-ln lypes i - • types for fixed mounting " - . • suitable fo r tropical conditions £•■■ , v . y ^ - -p * & p .

information applikation

Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
Contextual Info: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK

TU 55x

Contextual Info: M MOTOROLA M ilitary 5 4 LS 1 9 4 A 4-Bit Bidirectional Universal Shift Register (Cascadable) ELECTRICALLY TESTED PER: MIL-M-38510/30601 AVAILABLE AS: T h e 5 4 LS 1 9 4 A is a H igh-Speed 4-Bit B id ire ctio n al U n iv e rsa l S h ift R eg ­ ister. A s a high-speed m u ltifu nctio n , sequen tial b uilding block, it is u se ­

Contextual Info: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to

Contextual Info: 500mA, 3.3V Linear Regulator with Auxiliary Control Features Description The CS5231-3 combines a three-termi­ nal linear regulator with circuitry con­ trolling an external PFET transistor thus managing two input supplies. The part provides a 3.3V regulated

E355D

Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Contextual Info: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20

VQB71

Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
Contextual Info: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

an6311

Abstract: Widlar AN-1 LT 7210 zener diode LM373 lm170 10 amp HIGH VOLTAGE FAST-SWITCHING npn darlington lm741 LH0002N lm380 equivalent national an-2 switching regulator
Contextual Info: rABMMiirfiHMiarggsagg LINEAR H ? M g / 0 K]g KCA COMPONENTS, 8 WALLIS COUBT «•EXlNGTON, MASS, « 1 7 3 6 1 7 8 6 1 -9 0 2 4 National P R E F A C E The p u rp o se of th is h a n d b o o k is to p ro v id e a fu lly in d e xe d and c ro s s -re fe re n c e d c o lle c tio n of lin e a r in ­

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

"WF Berlin" srs 360

Abstract: SRS 4451 SRS551 SRS552 oszillografenrohren SRS360 SRS4451 Thyratron 5870 veb taschenbuch CV2131
Contextual Info: '* — ' . • â S P E Z IA L R O H R E N SPEZIALROHREN V E B W E R K F Ü R F E R N S E H E L E K T R O N IK . B E R L IN AUSGABE 1961 V V EB FU N K W ER K ERFU RT • T H Ü R IN G E N cjJlCo V E B P H Ö N IX R Ö N T G E N R O H R E N W E R K . R U D O L S T A D T

TRANSISTOR si 6822

Abstract: LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 lm3140 SN-72500 transistors br 6822 Siemens technische transistor 6823
Contextual Info: Technische Erläuterungen SIEMENS Allgem eines O ptoelektronische Bauelem ente haben in der m odernen Elektronik und dam it in fast allen Bereichen unseres Lebens weiten Eingang gefunden. Sie sind in hohem Maße an dem Um stellungsprozeß von Mechanik auf Elektronik beteiligt und haben, aufgrund ihrer Funktion als

THYRISTOR ts 602

Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
Contextual Info: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .

Contextual Info: E G & G/CANADA/OPTOELEK Il 47E D • 3D3DblO ■_< — GODDPòfl 2 ■ CANA 1550nm High Power Pulsed Laser C Ij K IJ OPTOELECTRONICS C86091E T-y -cs ■ ■ ■ ■ H T he C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T