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    TR/DIODE RK 306 Search Results

    TR/DIODE RK 306 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    TR/DIODE RK 306 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    marking 513 SOD-323

    Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    BC517 spice model

    Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
    Text: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information


    Original     		PDF VN2410L BC517 spice model bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S

    razoa

    Abstract: abb razoa ASEA relay - RAKZB rakzb NT 101 ABB RELAY - RAAAM FTL 8-1 614-100E distance relay B03-7012E
    Text: Info-Ng. | | | | fM / H U P aje* brown ss zer: ^ A T IO N R FR , May 1985 Edition 5 ^ K 61^30^ 7433 1 A BB Relays Distance relay type RAZO A o Three-phase switched distance relay of compact design o Three types of starting relays; - Underim pedance start using micro processors in the measur­


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    EA960

    Abstract: EA961 elektronenrohren zehner "WF Berlin" WF Berlin
    Text: ELEKTR O N E N R Ö H R E N EA 960 EA 961 EA 962* >> UKW-DIODEN für Meßzwecke — 75 — X TT I I io T S o ck e ls c h a lts c h e m a m ax. A b m e s s u n g e n TECHNISCHE DATEN H e izun g: Heizspannung Heizstrom Uf lf 6,3 125 V mA Betriebswerte: Diodenstromeinsatz


    OCR Scan     		PDF EA960 EA961 EA9621) elektronenrohren zehner "WF Berlin" WF Berlin

    RK 723 007

    Abstract: DIODE RK 306 SELECTOR SWITCH ASEA ABG RK 795 001-aa RK741 RK717 CATALOGUE SK 63-1 E ASEA ABG 10 RK795 RK70-10E
    Text: C a ta lo g u e R K 70- 10E Edition 1 5930-09 Su persecTes calatog ues R K 7 M O E RK 74-1OE and R K 7 8 -2 E Relay accessories Pushbuttons Component blocks ASEA T h e re lay accesso ries a re used to provide a relay, protective relay or other equip m en t, with


    OCR Scan     		PDF RK70-10E 74-1OE RK78-2E S-721 i960-Â RK 723 007 DIODE RK 306 SELECTOR SWITCH ASEA ABG RK 795 001-aa RK741 RK717 CATALOGUE SK 63-1 E ASEA ABG 10 RK795

    Untitled

    Abstract: No abstract text available
    Text: DFB54 M ITEL Fast Recovery Diode SEMICONDUCTOR DS4219 - 2.4 Supersedes Septem ber 1996 version, DS4219 - 2.3 KEY PARAMETERS v RRM 3500V 2135A Jf AV 20000A FSM 1500|lC Q r APPLICATIONS • Pow er Supplies. ■ Freewheel Diode. ■ Battery C hargers. ■


    OCR Scan     		PDF DFB54 DS4219 0000A DFB54

    DIODE RK 306

    Abstract: tr/DIODE RK 306
    Text: DETECTORS POSITION SENSITIVE DIODE SD-503 SD-503B, m ^ t o The SD-503 is position sensors fo r au to m a tic focusing of camera. FEATURES • Laser beam fo c u s in g /p o s itio n in g is best perform ed. • High perform ance • High r e lia b ility in dem anding environments.


    OCR Scan     		PDF SD-503 SD-503B, SD-503 DIODE RK 306 tr/DIODE RK 306

    Untitled

    Abstract: No abstract text available
    Text: @ M ITEL DS2103SY Rectifier Diode S E M IC O N D U C T O R Supersedes July 1997 version, DS4172 - 3.1 DS4172 - 3.2 KEY PARAMETERS VRRM 2600V IF av, 4785A 'fs m 81000A APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies.


    OCR Scan     		PDF DS4172 DS2103SY 1000A DS2103SY26 DS2103SY25 DS2103SY24 DS2103SY23 DS2103SY22 DS2103SY21

    relay ras 1210

    Abstract: asea RRME rrmh2 ASEA RMA16 RRMH RRME 1608 rrMH 2-107 MX 0842 RRMH ASEA rrme1
    Text: R K Ii E AUXILIARY RELAYS , . -v lp f f ig g , • several designs > ; .< -,v . • " : ^ • ¿ 5 | 8 ly • heavy-current design • plug-ln lypes i - • types for fixed mounting " - . • suitable fo r tropical conditions £•■■ , v . y ^ - -p * & p .


    OCR Scan     		PDF RMX17 RRM17 relay ras 1210 asea RRME rrmh2 ASEA RMA16 RRMH RRME 1608 rrMH 2-107 MX 0842 RRMH ASEA rrme1

    information applikation

    Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
    Text: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK


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    TU 55x

    Abstract: No abstract text available
    Text: M MOTOROLA M ilitary 5 4 LS 1 9 4 A 4-Bit Bidirectional Universal Shift Register (Cascadable) ELECTRICALLY TESTED PER: MIL-M-38510/30601 AVAILABLE AS: T h e 5 4 LS 1 9 4 A is a H igh-Speed 4-Bit B id ire ctio n al U n iv e rsa l S h ift R eg ­ ister. A s a high-speed m u ltifu nctio n , sequen tial b uilding block, it is u se ­


    OCR Scan     		PDF MIL-M-38510/30601 TU 55x

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to


    OCR Scan     		PDF MTP75N06HD/D MTP75N06HD

    E355D

    Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
    Text: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20


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    VQB71

    Abstract: vqb 71 Halbleiterbauelemente DDR "halbleiterwerk frankfurt" U105D diode sy-250 U107D u311d hfo frankfurt sy 170
    Text: eiecrronic Halbleiter-Bauelemente D ie v o r lie g e n d e Ü b e rs ic h t e n t h ä l t i n g e d rä n g te r Form d ie w ic h tig s te n G renz- und K enndaten d e r i n d e r DDR g e f e r t i g t e n H a lb le ite r b a u e le m e n te . D ie K ennw erte werden im a llg e m e in e n f ü r e in e U m gebungstem peratur von


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    TRANSISTOR 132-gd

    Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
    Text: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n


    OCR Scan     		PDF 06o3H TRANSISTOR 132-gd TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes

    TCA160

    Abstract: BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300
    Text: MULLARD DATA BOOK 1973-74 ER R A TA A U G U S T 1973 j\ 1 d - ^ Mullard Limited Renewal Sales Department Mullard House Torrington Place London WC1E 7HD N / , S E M IC O M D U C Type No. Page No. AC187 13 Correction Delete minus signs to read: *IC = 300m A;


    OCR Scan     		PDF AC187 BC157 BC158 BC159 BC186 BC187 BD201 BD202 BD203 BD204 TCA160 BY164 Mullard C296 TAA310A TAA435 TAA700 TBA550 TBA480 PCC88 TAA300

    an6311

    Abstract: Widlar AN-1 LT 7210 zener diode LM373 lm170 10 amp HIGH VOLTAGE FAST-SWITCHING npn darlington lm741 LH0002N lm380 equivalent national an-2 switching regulator
    Text: rABMMiirfiHMiarggsagg LINEAR H ? M g / 0 K]g KCA COMPONENTS, 8 WALLIS COUBT «•EXlNGTON, MASS, « 1 7 3 6 1 7 8 6 1 -9 0 2 4 National P R E F A C E The p u rp o se of th is h a n d b o o k is to p ro v id e a fu lly in d e xe d and c ro s s -re fe re n c e d c o lle c tio n of lin e a r in ­


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    "WF Berlin" srs 360

    Abstract: SRS 4451 SRS551 SRS552 oszillografenrohren SRS360 SRS4451 Thyratron 5870 veb taschenbuch CV2131
    Text: '* — ' . • â S P E Z IA L R O H R E N SPEZIALROHREN V E B W E R K F Ü R F E R N S E H E L E K T R O N IK . B E R L IN AUSGABE 1961 V V EB FU N K W ER K ERFU RT • T H Ü R IN G E N cjJlCo V E B P H Ö N IX R Ö N T G E N R O H R E N W E R K . R U D O L S T A D T


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    TRANSISTOR si 6822

    Abstract: LM 3140 si 6822 transistor transistor 6822 si transistors Si 6822 lm3140 SN-72500 transistors br 6822 Siemens technische transistor 6823
    Text: Technische Erläuterungen SIEMENS Allgem eines O ptoelektronische Bauelem ente haben in der m odernen Elektronik und dam it in fast allen Bereichen unseres Lebens weiten Eingang gefunden. Sie sind in hohem Maße an dem Um stellungsprozeß von Mechanik auf Elektronik beteiligt und haben, aufgrund ihrer Funktion als


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    THYRISTOR ts 602

    Abstract: BYX30-200R BYX31 BYX30 BYX30-600R BYX30-200 INVERTER 50 kW BYX30-600 IEC134 DM51
    Text: BYX30 SERIES T - 0 3 - 1 7 PHILIPS INTERNATIONAL SbE D • 711DfiEh 0041b04 440 « P H I N FAST SOFT-RECOVERY RECTIFIER DIODES • With controlled avalanche Also available to BS9333-F002 D iffu sed s ilic o n d io d e s in D O -4 m e ta l e n v e lo p e s , c a p a b le o f a b s o r b in g tr a n s i e n t s .


    OCR Scan     		PDF BYX30 T-03-Ã 711DfiSh 0041b04 BS9333-F002 BYX30-200 BYX30-600 BYX30-200R BYX30-600R. Non-repetiti10^ THYRISTOR ts 602 BYX31 BYX30-600R INVERTER 50 kW BYX30-600 IEC134 DM51

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK Il 47E D • 3D3DblO ■_< — GODDPòfl 2 ■ CANA 1550nm High Power Pulsed Laser C Ij K IJ OPTOELECTRONICS C86091E T-y -cs ■ ■ ■ ■ H T he C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage


    OCR Scan     		PDF 1550nm C86091E 86091E

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


    OCR Scan     		PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram