TR 3A5 Search Results

117L7

Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Contextual Info: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.

transient absorption zener

Abstract: SOV12 SOV15 SOV18 SOV24 SOV28
Contextual Info: MICROSEriI STE D CORP biisab 5 X DOOEm? x SST i ns c S0V5.0 thru SOV28 Microsemi Corp. i Thfc d'ode e SASTAANA. 4 SCOTTSDALE, A7. H tr in o re in in rm u lm n call' (602 9 4 I-M Q 0 FEATURES • VOLTAGES FROM 5.0 TO 28V STANO-OFF (VWM) • LOW CLAMPING RATIO

3A5 tube

Abstract: tube 3a5 RADIOTRON rca company RCA tube
Contextual Info: H-F TWIN TRIODE M IN IA T U R E T Y P É F i 1ament Coated Filam ent Arrangement S e r ie s * V o lta g e 2.8 Current 0.11 D ire c t In te re le c tr o d e C a p a c ita n c e s :0 P a ra lle l 1.4 0.22 T rio d e U n it T l G rid to P la te G rid to Filam ent

JRC 2360

Abstract: JRC 2120 t 1nu 4F 1nu 7b 654mr SAH200 54X4 NJU6583 NJU6583C SEG40
Contextual Info: NJU6583 m 3 3 zìi > x 9 6-tr^y > t o K ' p n - j u m t t t p m ï 'y Ijl m htìi* h T ’^ L C D ^ K ^ / \ * • 9\- Wí N J U 6 5 8 3 IÍ, 4 + 5 W W 7 7 ^ S * Ä * W c i t ' ' 4 W L C D I-' i i i < "C , 3, 696t* "JÍOWft -ÍRAM, CPU<f:/*-7itt[ËB§, 3t>/W* i'A4* 7ÏA Sft?

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT /¿ PD 4 2 S 1 6 4 0 5 L , 4 2 1 6 4 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The ¿¡PD42S16405L, 4216405L are 4,194,304 words by 4 bits CMOS dynamic RAM with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

d42s

Abstract: n010 marking
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M -W ORD BY 4-BIT, EDO Description The ,uPD42S16405L, 4216405L are 4,194,304 w ords by 4 bits CMOS dynam ic RAM with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

Contextual Info: 25 AM OCTLIU ST Device ASSP Telecom Standard Product Data Sheet Released em y, 14 Se pt OCTLIU ST be r, 20 04 06 :5 0: PM4325 Data Sheet Proprietary and Confidential Released Issue No. 2: June 2003 Do wn lo ad ed by Co nt e nt Te a m of P ar tm in er In co

Contextual Info: 4: 55 PM OCTLIU ST Device ASSP Telecom Standard Product Data Sheet Released ob ct sd ay ,2 8O OCTLIU ST er ,2 00 4 02 :2 PM4325 Data Sheet Proprietary and Confidential Released Issue No. 2: June 2003 Do wn lo ad ed by C on te n tT ea m of Pa rtm in er In co

Diode LT 228d

Contextual Info: 8: 45 AM PM4323 OCTLIU LT Device ASSP Telecom Standard Product Data Sheet Released 0J n Mo nd ay ,3 OCTLIU LT an ua ry ,2 01 2 12 :3 PM4323 Pa rtm in er In co Device Telecom Standard Product Proprietary and Confidential Released Issue No. 5: April 2008 Do

Diode LT 228d

Abstract: 1E2H SMD making code DV5
Contextual Info: 7: 43 AM PM4323 OCTLIU LT Device ASSP Telecom Standard Product Data Sheet Released ,0 ay co n Th ur sd OCTLIU LT 1M ay ,2 00 8 01 :0 PM4323 of Pa rtm in er In Device Telecom Standard Product Proprietary and Confidential Released Issue No. 5: April 2008 Do

Contextual Info: 6: 36 PM OCTLIU LT Device ASSP Telecom Standard Product Data Sheet Released ug sd ay ,1 2A OCTLIU LT us t, 20 04 04 :1 PM4323 Data Sheet Proprietary and Confidential Released Issue No. 3: June 2003 Do wn lo ad ed by C on te n tT ea m of Pa rtm in er In co

Contextual Info: 0: 57 AM OCTLIU LT Device ASSP Telecom Standard Product Data Sheet Released be r, 20 05 12 :5 PM4323 da y, 13 De ce m OCTLIU LT Data Sheet Proprietary and Confidential Released Issue No. 4: November 2005 Do wn lo ad ed by Co nt e nt Te a m of P ar tm in er

36AH

Abstract: Diode LT 228d
Contextual Info: 6: 58 AM PM4325 OCTLIU ST Device Telecom Standard Product Data Sheet Released ,0 ay co n Th ur sd OCTLIU ST 1M ay ,2 00 8 01 :0 PM4325 of Pa rtm in er In Device Telecom Standard Product Proprietary and Confidential Released Issue No. 3: April 2008 Do wn lo

NN5116

Contextual Info: NN511661 /NN511667series ED O Hyper Page Mode CM O S 64Kx 16bit Dynamic RAM NPN>a( D ESCRIPTIO N The NN511661/1667 se ries is a high performance CM OS Dynam ic Random A ccess Memory organized as 65,536 words by 16 bits. The NN511661/1667 series is fabricated with advanced CM OS technology and designed with innovative design

taa 723

Abstract: A0-A10J-1 A10C A10EC
Contextual Info: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM OS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4,194 ,3 0 4 x 4 tyt Static C olum n M ode C M O S DRAM s. Static Colum n M ode offers high speed ran d o m acce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2K Ref. o r 4 K R ef. , acce ss

Contextual Info: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM O S Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4 ,1 94 ,3 0 4 x 4 f i t Static C olum n M ode C M O S DRAM s. Static C olum n M ode offers high sp e e d random a cce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2 K Ref. o r 4 K R ef. , acce ss

Contextual Info: KM44C258C CMOS DRAM 262,144x4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C258C is a CMOS high speed 2 6 2 ,1 4 4 x 4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

hm514280

Abstract: HM514280JP8 HM514280ZP-10 F0514
Contextual Info: H M 5 1 4 2 8 0 S e r ie s Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION HM 514280JP Series The Hitachi HM514280 are CMOS dynamic RAM orga­ nized as 262,144-word x 18-bit. HM514280 have realized higher density, higher performance and various functions by

31A11

Abstract: KM41C16000A A91E
Contextual Info: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 16,777,216 x 1 bit Fast Page M ode C M O S DRA M s. Fast Page M ode o ffe rs high speed random acce ss o f m em ory celis within th e sam e row. Pow er supply voltage + 5.0V o r +3.3V , access tim e(-5,

Contextual Info: KM416C256B, KM416V256B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 262 ,1 4 4 x 16 bit Fast Page M ode C M O S D RAM s. Fast Page M ode o ffe rs high speed random a c c e s s of m em o ry ce lls w ithin th e sam e row. P ow er supply vo lta g e +5.0V o r +3.3V , a cce ss tim e

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000AB72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description T h e M C-424000AB72F is a 4,194,304 w o rd s by 72 bits d y n a m ic R A M m o d u le on w h ic h 18 p ie c e s o f 16 M O R A M : ¿¿PD4217400 are assem b le d .

Contextual Info: MITSUBISHI LSIs M5M4V4400CJ,TP-6,-7,-6S,-7S R e v . 1 .1 FAST PAGE MODE 4194304-BIT 1048576-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION T h is is a fa m ily o f 1 0 4 8 5 7 6 -w o rd b y 4 -b it d y n a m ic R A M s, fa b ric a te d w ith th e high p e rfo rm a n c e C M O S pro c e s s , a n d is ideal fo r

TC524256BZ

Abstract: c5242 S103 TC524256BJ ZIP28-P-400 BZ-10 TC52425
Contextual Info: « PRELIMINARY 2 6 2 , 1 4 4 W O R D S x 4 B IT S M U L T IP O R T D R A M D E S C R IP T IO N T h e TC 524256B J/B Z is a CMOS m u ltip o r t m e m o ry e q u ip p e d w ith a 2 62,144-w ords b y 4 -b its d y n a m ic ra n d o m a c c e s s m e m o ry RAM p o r t a n d a 5 1 2 -w o rd s b y 4 -b its s ta tic s e r ia l a c c e s s m e m o ry (SA M ) p o rt. T h e

Contextual Info: KM48C514D, KM48V514D CMOS DRAM 5 1 2 K x 8 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time